公开(公告)号：US07033922B2

公开(公告)日：2006-04-25

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20050056536A1

公开(公告)日：2005-03-17

申请号：US10934231

申请日：2004-09-03

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok Sinha

IPC分类号： C23C14/34 ,  C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

公开(公告)号：US06296712B1

公开(公告)日：2001-10-02

申请号：US09055689

申请日：1998-04-06

申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

公开(公告)号：US6129044A

公开(公告)日：2000-10-10

申请号：US409477

申请日：1999-10-06

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

公开(公告)号：US5201990A

公开(公告)日：1993-04-13

申请号：US704523

申请日：1991-05-23

申请人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

发明人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768

CPC分类号： C23G5/00 ,  C23C16/4404 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76877

摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.

摘要翻译： 描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。 该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。 当使用氮气时，等离子体也必须含有氢气。 当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害 房间。 在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

公开(公告)号：US08236706B2

公开(公告)日：2012-08-07

申请号：US12334425

申请日：2008-12-12

申请人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

发明人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

摘要翻译： 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

公开(公告)号：US20110223708A1

公开(公告)日：2011-09-15

申请号：US13107962

申请日：2011-05-16

申请人： Ashok Sinha

发明人： Ashok Sinha

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/0256 ,  H01L31/04 ,  H01L31/0747 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

摘要翻译： 公开了制造太阳能电池而不需要进行冶金级硅气化的方法。 因此，避免了制造太阳能或硅级硅所涉及的成本和健康和环境危害。 太阳能电池结构包括冶金级掺杂硅衬底和在衬底上形成的与衬底形成p-i-n结的薄膜结构。 衬底可以掺杂p型，并且薄膜结构可以是在衬底上形成的本征非晶层和在本征层上形成的n型非晶层。

公开(公告)号：US20110220201A1

公开(公告)日：2011-09-15

申请号：US13107875

申请日：2011-05-14

申请人： Ashok Sinha

发明人： Ashok Sinha

IPC分类号： H01L31/0256 ,  H01L31/036

CPC分类号： H01L31/0256 ,  H01L31/04 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

摘要翻译： 无气化冶金级硅制造的太阳能电池。 基材通过以下步骤制备：在熔炉中熔化冶金级硅; 将熔融的冶金级硅固化成锭; 切割锭以获得多个晶片; 抛光和清洁每个晶片; 在每个晶片的背面沉积铝层; 在每个晶片的前表面上沉积一层氢化氮化硅; 在高温退火晶片; 去除氢化氮化硅; 并除去铝层。 在形成太阳能电池之前，前表面可以被纹理化。 太阳能电池结构包括冶金级掺杂硅衬底和在衬底上形成的与衬底形成p-i-n结的薄膜结构。 衬底可以掺杂p型，并且薄膜结构可以是在衬底上形成的本征非晶层和在本征层上形成的n型非晶层。

公开(公告)号：US20100317146A1

公开(公告)日：2010-12-16

申请号：US12862334

申请日：2010-08-24

申请人： Ashok Sinha ,  Wen Ma

发明人： Ashok Sinha ,  Wen Ma

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/075 ,  H01L31/186 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.

摘要翻译： 通过蚀刻多个冶金级晶片来制备用于太阳能电池的基板; 在每个晶片的背面沉积铝层; 在每个晶片的前表面上沉积一层氢化氮化硅; 在高温退火晶片; 在不干扰铝层的情况下除去氢化氮化硅。 然后在晶片的前表面上制造太阳能电池，同时铝保持用作电池的背接触。

公开(公告)号：US20100116335A1

公开(公告)日：2010-05-13

申请号：US12629049

申请日：2009-12-02

申请人： Ashok Sinha

发明人： Ashok Sinha

IPC分类号： H01L31/103 ,  H01L21/30 ,  H01L31/18

CPC分类号： H01L31/0256 ,  H01L31/04 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

摘要翻译： 无气化冶金级硅制造的太阳能电池。 基材通过以下步骤制备：在熔炉中熔化冶金级硅; 将熔融的冶金级硅固化成锭; 切割锭以获得多个晶片; 抛光和清洁每个晶片; 在每个晶片的背面沉积铝层; 在每个晶片的前表面上沉积一层氢化氮化硅; 在高温退火晶片; 去除氢化氮化硅; 并除去铝层。 在形成太阳能电池之前，前表面可以被纹理化。 太阳能电池结构包括冶金级掺杂硅衬底和在衬底上形成的与衬底形成p-i-n结的薄膜结构。 衬底可以掺杂p型，并且薄膜结构可以是在衬底上形成的本征非晶层和在本征层上形成的n型非晶层。