摘要:
A liquid crystal display device includes an alignment layer with constituent materials. The constituent materials have a stoichiometric relationship configured to provide a given pretilt angle. Liquid crystal material is provided in contact with the alignment layer. A method for forming an alignment layer for liquid crystal displays includes forming the alignment layer on a substrate by introducing an amount of material to adjust a stoichiometric ratio of constituent materials wherein the amount is determined to provide a given pretilt angle to the alignment layer. Ions are directed at the alignment layer to provide uniformity of the pretilt angle.
摘要:
A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.
摘要:
In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.
摘要:
A method is disclosed for forming an alignment layer for use in a liquid crystal cell layer for use in a liquid crystal cell using an ion beam source that includes the steps of: (1) providing a substrate having a surface; (2) providing an ion beam source that emanates an ion beam; (3) providing a mask layer disposed between the substrate surface and the ion beam source. The mask layer has at least two openings disposed between the ion beam source and the substrate surface. The shape and position of the openings reduce the irregularity of the beam exposure in a border region on the surface of the substrate resulting from the ion beam source. The present invention may be used in conjunction with substrate treatment using multiple sweeps with a single ion beam source, or with a substrate treatment using a single sweep with multiple ion beam sources. Also disclosed is an apparatus for practicing the disclosed method.
摘要:
High T.sub.c superconducting devices are described in which controlled grain boundaries in a layer of the superconductors forms a weak link or barrier between superconducting grains of the layer. A method is described for reproducibly fabricating these devices, including first preparing a substrate to include at least one grain boundary therein. A high T.sub.c superconductor layer is then epitaxially deposited on the substrate in order to produce a corresponding grain boundary in the superconducting layer. This superconducting layer is then patterned to leave at least two regions on either side of the grain boundary, the two regions functioning as contact areas for a barrier device including the grain boundary as a current flow barrier. Electrical contacts can be made to the superconducting regions so that bias currents can be produced across the grain boundary which acts as a tunnel barrier or weak link connection.
摘要:
A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.
摘要:
In accordance with the disclosure, certain impurities, e.g., alloying additions, are introduced in thin metal film to negate the driving force or the effect of the driving force which causes the hillock formation. Such thin metallic films are usually fabricated on the substrates which have different thermal coefficients of expansion than the film itself, and during thermal cycling stresses can be introduced into the film. This stress may serve as a driving force for atom movement and, therefore, to the formation of hillocks. The vehicle by which the induced stress in a film effects the requisite atom movement is via defect movement, and when the force is compressive this gives rise to hillocks. In the practice of this disclosure, impurity additions introduced into a film affect hillock growth by their interaction with the defects which give rise to the requisite atom movement. Systematically selected impurity additions are introduced into a film during fabrication thereof which inhibit the defect movement in the class consisting of a migration of point defects, linear defects and planar defects wherein the linear defects are dislocations and the planar defects are grain boundaries. Usually, the addition of impurities into a metal film is termed alloying and the resultant film is termed an alloyed film. The alloying addition may be either soluble or insoluble in the film. This will determine the choice of possible modes of fabrication. When the alloy addition is soluble, it is included within the limits of solubility at the temperature at which it is introduced. When the alloy addition is insoluble, it is introduced during fabrication and quantity thereof may be significantly better than the quantity capable of being sustained were the alloying addition and the film to be in thermal equilibrium.
摘要:
Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays
摘要:
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
摘要:
A molecular manipulator includes a light-sensitive molecule, including a double bond, which changes a cis-trans configuration of the double bond in response to illumination by light of a selected wavelength, and a probe, for example, a probe of a scanned-proximity probe microscope, to which the light-sensitive molecule is attached. A method of making the molecular manipulator includes covalently bonding the light-sensitive molecule to the probe. A method of moving a nanostructure includes controllably grasping, moving, and releasing the nanostructure with the molecular manipulator.