公开(公告)号：US11515198B2

公开(公告)日：2022-11-29

申请号：US16941311

申请日：2020-07-28

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Scott L. Light ,  John A. Smythe ,  Sony Varghese

IPC: H01L21/70 ,  H01L21/762 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/06 ,  G03F7/075 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/023 ,  H01L21/311

Abstract: Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

公开(公告)号：US20220375942A1

公开(公告)日：2022-11-24

申请号：US17323516

申请日：2021-05-18

Applicant: Micron Technology, Inc.

Inventor： Stephen D. Snyder ,  Thomas A. Figura ,  Siva Naga Sandeep Chalamalasetty ,  Ping Chieh Chiang ,  Scott L. Light ,  Yashvi Singh ,  Yan Li ,  Song Guo

IPC: H01L27/108 ,  H01L27/06 ,  G11C5/06

Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US20200066578A1

公开(公告)日：2020-02-27

申请号：US16531837

申请日：2019-08-05

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Richard J. Hill

IPC: H01L21/768 ,  H01L21/033 ,  H01L23/528 ,  H01L23/522

Abstract: A metal pattern comprising interconnected small metal segments, medium metal segments, and large metal segments. At least one of the small metal segments comprises a pitch of less than about 45 nm and the small metal segments, medium metal segments, and large metal segments are separated from one another by variable spacing. Semiconductor devices comprising initial metallizations, systems comprising the metal pattern, and methods of forming a pattern are also disclosed.

公开(公告)号：US20180337087A1

公开(公告)日：2018-11-22

申请号：US15598795

申请日：2017-05-18

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Scott L. Light ,  John A. Smythe ,  Sony Varghese

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/06 ,  G03F7/075 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC classification number: H01L21/76224 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0757 ,  G03F7/20 ,  G03F7/30 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02345 ,  H01L21/31053 ,  H01L21/31058 ,  H01L29/0649

Abstract: Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

公开(公告)号：US20160048074A1

公开(公告)日：2016-02-18

申请号：US14928159

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC: G03F7/00 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

Abstract translation: 在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分 第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。 附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成 在衬底上的第二抗蚀剂材料。 第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

公开(公告)号：US20150099362A1

公开(公告)日：2015-04-09

申请号：US14049135

申请日：2013-10-08

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Vishal Sipani ,  Michael D. Hyatt

IPC: H01L21/308

CPC classification number: H01L21/0337

Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.

Abstract translation: 包括在衬底中形成线图案的方法包括在形成多个定向自组装（DSA）线时使用沿着相应引导线形成的多个纵向间隔开的突出特征作为模板，所述定向自组装（DSA）线分别包括以下中的至少一个：（a） ：在其间纵向延伸的间隔开的突出特征和DSA材料，和（b）之间：在紧邻引导线之间横向间隔开并且横向间隔开。 可以使用DSA线作为掩模来处理DSA线之间和横向上的基底材料。

公开(公告)号：US20150015860A1

公开(公告)日：2015-01-15

申请号：US14500625

申请日：2014-09-29

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Dan Millward ,  Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael D. Hyatt ,  Jianming Zhou

IPC: G03F7/20

CPC classification number: G03F7/70741 ,  G03F1/38 ,  G03F7/70433 ,  G03F7/70891

Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.

Abstract translation: 使用光掩模光刻地图案化可光成像材料的方法来减轻不对称透镜加热的方法包括当使用掩模版图案可光成像材料时，确定预期在透镜上将出现第一热点位置的位置。 然后制造掩模版以在掩模版的非印刷区域内包括非印刷特征，当使用掩模版对可光成像材料进行图案化时，其在透镜上产生额外的热点位置。 考虑了其他实施方式，包括可以独立于使用或制造方法的标线。

公开(公告)号：US20140342563A1

公开(公告)日：2014-11-20

申请号：US13893546

申请日：2013-05-14

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Kyle Armstrong ,  Michael D. Hyatt ,  Vishal Sipani

IPC: H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/0337

Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.

Abstract translation: 在衬底上形成图案的方法包括形成从第一平版印刷图案化步骤导出的间隔开的第一特征。 侧壁间隔件形成在第一特征的相对侧上。 在形成侧壁间隔物之后，形成从第二平版印刷图案化步骤得到的隔开的第二特征。 第二特征中的至少一些个体在穿过第一和第二特征的至少一个直线垂直横截面中在第一特征之间横向间隔开并且横向间隔开。 在第二平版印刷图案化步骤之后，所有至少一个横截面中的所有侧壁间隔物都被去除。

公开(公告)号：US20140162458A1

公开(公告)日：2014-06-12

申请号：US13712820

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Ranjan Khurana ,  Anton J. DeVillers ,  Kevin J. Torek ,  Shane J. Trapp ,  Scott L. Light ,  James M. Buntin

IPC: H01L21/308 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.

Abstract translation: 在衬底上形成图案的方法包括在衬底的材料中形成开口。 开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔的柱。 公开了其他实施例。