-
31.发明授权Capacitive element, semiconductor device, and method of manufacturing the capacitive element 有权电容元件，半导体器件以及制造电容元件的方法公开(公告)号：US07491996B2
公开(公告)日：2009-02-17
申请号：US11168547
申请日：2005-06-29
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/016 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/31658 , H01L21/31691 , H01L28/55 , H01L28/65 , H01L2224/16227 , H01L2924/15192 , H01L2924/15312 , H01L2924/19041 , H01L2924/19105 , H01L2924/19106
摘要： A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.
摘要翻译： 电容性元件包括基底构件10，形成在基底构件10上的下面的绝缘膜11，通过在下面的绝缘膜11上依次形成下部电极13，电容器电介质膜14和上部电极15而构成的电容器Q 形成在上电极15上以覆盖电容器Q的至少一部分的下保护绝缘膜16a和形成在下保护绝缘膜16a上并具有比下保护层更宽的能带隙的上保护绝缘膜16b 绝缘膜16a。
-
32.发明授权公开(公告)号：US07405921B2
公开(公告)日：2008-07-29
申请号：US11486001
申请日：2006-07-14
IPC分类号： H01G4/228
CPC分类号： H01G4/33 , H01G4/228 , H01L23/3114 , H01L23/5223 , H01L27/0805 , H01L28/57 , H01L28/65 , H01L2224/05001 , H01L2224/05023 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/19041 , H01L2924/3011 , H01L2924/014 , H01L2224/13099 , H01L2224/05647 , H01L2924/00014 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05166 , H01L2224/05169
摘要： In one aspect of the invention, a thin layer capacitor element has a capacitor with a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, and a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.
摘要翻译： 在本发明的一个方面，薄层电容器元件具有电容器，其具有由金属氧化物构成的电介质层和由树脂材料制成的保护绝缘层，并且由非导电无机材料制成的阻挡层设置在 电容器和保护绝缘层。 在本发明的另一方面，薄层电容器元件构成为电容器结构覆盖有由固化树脂构成的至少一个保护绝缘层，所述固化树脂由至少一种选自以下的树脂前体形成： 的热固性树脂，光固化树脂和热塑性树脂。
-
公开(公告)号：US07365327B2
公开(公告)日：2008-04-29
申请号：US11086909
申请日：2005-03-23
IPC分类号： G01J5/02
CPC分类号： H01L31/101 , G01J1/42 , H01L37/02
摘要： An SiO2 layer (3), a Ti layer (4), a Pt layer (5), a PLZT layer (6) and an IrO2 layer (7) are formed sequentially on an Si substrate (2). The IrO2 layer (7) functioning as a top electrode has a thickness of about 100 nm. Since the IrO2 layer (7) has conductivity lower than that of Pt or the like conventionally used as a top electrode and a skin depth deeper than that of Pt or the like, sufficient sensitivity can be attained by a thickness of about 100 nm.
摘要翻译： SiO 2层（3），Ti层（4），Pt层（5），PLZT层（6）和IrO 2层（7） 顺序地形成在Si衬底（2）上。 用作顶部电极的IrO 2层（7）具有约100nm的厚度。 由于IrO 2层（7）的导电率比常规用作顶部电极的Pt等等的电导率低，而且比Pt等的深度更深，因此可以通过 厚度约100nm。
-
34.发明授权公开(公告)号：US07026680B2
公开(公告)日：2006-04-11
申请号：US10790760
申请日：2004-03-03
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L28/55 , H01L27/0805
摘要： An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba(1-y)(1-x)Sr(1-y)xYy)Ti1+zO3+δ with the range 0
摘要翻译： 公开了一种集成的薄膜电容元件，其包括具有增加的电容和电容密度的电压可调谐性的特定组成的介电材料及其制造方法。 集成薄膜电容元件包括由下电极构成的电容器结构，由下式表示的高介电常数材料构成的介电层：（Ba（1-y）（1-x）） Sr 1（1-y）x Y y y）Ti 1 + z O 3 +δ，其范围为0 （1-y）（1-x）+ Sr（1-y）x <1，0.007
-
公开(公告)号：US20090007405A1
公开(公告)日：2009-01-08
申请号：US11790732
申请日：2007-04-27
IPC分类号： H01G7/00
CPC分类号： H01L27/0805 , H01L21/76877 , H01L24/11 , H01L28/40 , H01L2224/06102 , H01L2224/1147 , H01L2224/13023 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).
摘要翻译： 电容器装置包括由形成在基板（10）上的下电极（12），电介质膜（14）和上电极（16）构成的电容器Q; 覆盖电容器Q的绝缘膜（18）; 形成在所述上电极（16）的连接部（16a）上的绝缘膜（18）中的第一接触孔（18a） 用于防止形成在第一接触孔（18a）中的焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸点（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），并与第一接触孔 ）突出部（16a）。
-
36.发明授权Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof 有权半导体芯片的探针卡和测试方法，电容器及其制造方法公开(公告)号：US07466152B2
公开(公告)日：2008-12-16
申请号：US11486053
申请日：2006-07-14
IPC分类号： G01R31/02
CPC分类号： G01R1/07378 , G01R31/2886 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/15311 , H01L2224/05599
摘要： A probe card including probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.
摘要翻译： 一种探针卡，包括探针，其中具有多层互连结构的堆叠互连层，并且在与多层互连结构电连接的顶表面上承载探针;以及电容器，其设置在积层互连层上，与电连接 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。
-
37.发明授权Capacitive element, method of manufacture of the same, and semiconductor device 有权电容元件及其制造方法以及半导体器件公开(公告)号：US07439199B2
公开(公告)日：2008-10-21
申请号：US11581383
申请日：2006-10-17
IPC分类号： H01G7/00
CPC分类号： H01L28/55 , H01G4/33 , H01L24/73 , H01L27/0805 , H01L28/65 , H01L28/75 , H01L2224/16225 , H01L2224/16265 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/12044 , H01L2924/1515 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107 , H01L2924/3011 , Y10S257/924 , Y10S438/957 , Y10T29/435 , H01L2924/00012 , H01L2924/00
摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在此形成下电极（14a），电容器电介质层（15a）和上电极（16a）的电容器（Q 1和Q 2） 在下阻挡层（13）上的顺序; 和覆盖至少电容器电介质层（15a）和下阻挡层（13）的上阻挡层（20）。
-
公开(公告)号：US07417276B2
公开(公告)日：2008-08-26
申请号：US11582480
申请日：2006-10-18
IPC分类号： H01L27/108
CPC分类号： H01L21/02197 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02186 , H01L21/02266 , H01L21/02304 , H01L21/02337 , H01L21/31691 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1
-
公开(公告)号：US07405366B2
公开(公告)日：2008-07-29
申请号：US11339661
申请日：2006-01-26
IPC分类号： H05K1/16
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 including a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further including: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译： 包括由多个树脂层26,34,42,52,56形成的基座10的插入件2; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下部电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到各个上部电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。
-
40.发明授权公开(公告)号：US07180119B2
公开(公告)日：2007-02-20
申请号：US10849791
申请日：2004-05-21
IPC分类号： H01L27/108
CPC分类号： H01G4/33 , H01G4/008 , H01G4/228 , H01L21/28568 , H01L27/0805 , H01L27/10852 , H01L28/55 , H01L28/65 , H01L28/75 , H01L2224/11
摘要： The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14, a dielectric film 20 formed on the lower electrode 18, and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22, and a amorphous conduction film 24 formed on the polycrystalline conduction film 22. Because of the amorphous conduction film 24 included in the upper electrode 28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20. Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.
摘要翻译： 根据本发明的电容器包括形成在基底基板14上的下电极18，形成在下电极18上的电介质膜20和形成在电介质膜20上并包括多晶导体膜22的上电极28，以及 形成在多晶导体膜22上的非晶导体膜24。 由于上部电极28中包含的能够截断氢和水的非晶导体膜24，所以可以禁止氢和水到达电介质膜20。 因此，防止氧化物的电介质膜20被氢还原，并且电容器可以具有良好的电特性。
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.028 秒)
