公开(公告)号：US20100193131A1

公开(公告)日：2010-08-05

申请号：US12443912

申请日：2008-10-29

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Kyuzo Nakamura ,  Koukou Suu ,  Toshiya Yogo ,  Kazushige Komatsu ,  Nobusuke Tachibana

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Kyuzo Nakamura ,  Koukou Suu ,  Toshiya Yogo ,  Kazushige Komatsu ,  Nobusuke Tachibana

IPC分类号： C23F1/08

CPC分类号： H01L21/02068 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/31138

摘要： An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

摘要翻译： 灰化装置可防止灰度随时间变化。 灰化装置在包括处理室中的暴露金属的基板上灰化有机材料。 灰化装置包括形成在处理室中并通过其提供给处理室的活性物质通过的路径。 该路径由其上由活性物质从衬底散射的金属可收集的表面限定，其表面被形成以暴露同一种类的金属。

公开(公告)号：US20100151150A1

公开(公告)日：2010-06-17

申请号：US12600650

申请日：2008-05-14

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

IPC分类号： C23C16/513

CPC分类号： H01J37/32467 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32568

摘要： A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

摘要翻译： 本发明的等离子体处理装置对待处理的基板，用贵金属材料和铁电体材料的等离子体处理进行处理，并且在加热时设置有暴露于等离子体的构成部件。 该构成部件由至少99％的铝纯度的铝合金形成。

公开(公告)号：US20100133235A1

公开(公告)日：2010-06-03

申请号：US12597637

申请日：2008-05-08

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/3266 ,  C23C4/00 ,  C23C4/11 ,  H01J37/16 ,  H01J37/321

摘要： A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

摘要翻译： 提供了具有优异的面内均匀性和高蚀刻速率的干蚀刻装置以及干蚀刻方法。 干蚀刻装置包括具有上等离子体产生室和下基板处理室的真空室; 设置在所述等离子体产生室的侧壁外侧的磁场线圈; 天线线圈，设置在所述磁场线圈和所述侧壁的外侧之间并连接到高频电源; 以及用于引入设置在等离子体产生室顶部的蚀刻气体的装置，其中所述侧壁由相对介电常数为4以上的材料形成。

公开(公告)号：US20100083981A1

公开(公告)日：2010-04-08

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： B08B6/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US20050211168A1

公开(公告)日：2005-09-29

申请号：US11132173

申请日：2005-05-19

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J10/02 ,  B01J19/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

公开(公告)号：US09145605B2

公开(公告)日：2015-09-29

申请号：US13876756

申请日：2011-09-15

申请人： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

发明人： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC分类号： C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC分类号： C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

摘要： A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

摘要翻译： 提供薄膜制造方法和薄膜制造装置以制造具有良好重复性的薄膜。 虚拟衬底被输送到腔室中，并且虚拟处理气体被供给到虚拟衬底。 此外，将产品基板输送到室中，并且将不同于虚拟处理气体的原料气体供应到产品基板。 原料气体含有用金属有机化学气相沉积（MOCVD）法制造薄膜的金属材料。 由于原料气体不用作虚拟处理气体，所以在制造薄膜时可以将金属材料的使用量减到最小，再现性良好。

公开(公告)号：US09059105B2

公开(公告)日：2015-06-16

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种灰化装置及其制造方法，其中抑制了加工效率的降低。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US20120305391A1

公开(公告)日：2012-12-06

申请号：US13522214

申请日：2010-12-24

申请人： Poong Kim ,  Koukou Suu ,  Shouichi Hashiguchi ,  Takanori Mikashima ,  Takatoshi Oginosawa ,  Wataru Iteue

发明人： Poong Kim ,  Koukou Suu ,  Shouichi Hashiguchi ,  Takanori Mikashima ,  Takatoshi Oginosawa ,  Wataru Iteue

IPC分类号： B29C43/10 ,  C23C14/34 ,  C23C14/08

CPC分类号： C04B35/01 ,  C04B35/645 ,  C04B35/6455 ,  C04B37/006 ,  C04B2235/3203 ,  C04B2235/3275 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2237/124 ,  C04B2237/34 ,  C04B2237/40 ,  C23C14/08 ,  C23C14/3414 ,  H01M4/0426 ,  H01M4/525 ,  H01M10/052

摘要： Disclosed are a manufacturing method for a LiCoO2 sintered body, said manufacturing method enabling the safe manufacturing of a high density sintered body, and a sputtering target. The LiCoO2 sintered body manufacturing method includes a step in which LiCoO2 powder is filled into a mold. The pressure inside the mold is reduced, and the LiCoO2 powder is pressure sintered inside the mold at a temperature between 800° C. and 880° C. inclusive. The above method enables the safe production of a LiCoO2 sintered body having a relative density of at least 95% and an average particle diameter of 10 μm-30 μm inclusive.

摘要翻译： 公开了一种用于LiCoO 2烧结体的制造方法，所述制造方法能够安全地制造高密度烧结体和溅射靶。 LiCoO2烧结体的制造方法包括将LiCoO 2粉末填充到模具中的工序。 模具内的压力降低，并且LiCoO 2粉末在模具内在800℃和880℃之间的温度下进行压力烧结。 上述方法能够安全地生产相对密度为95％以上且平均粒径为10μm〜30μm的LiCoO 2烧结体。

公开(公告)号：US08133325B2

公开(公告)日：2012-03-13

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： C25F1/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US20110117742A1

公开(公告)日：2011-05-19

申请号：US12920925

申请日：2009-03-05

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Takahide Murayama

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Takahide Murayama

IPC分类号： H01L21/3065

CPC分类号： H01J37/34 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/30655

摘要： [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions.[Solving Means] In a plasma processing method according to the present invention, the process of etching a substrate (W) having a mask pattern formed on a surface thereof by using plasma formed in a vacuum vessel (21) and the process of forming a protective film on a side wall portion of an etching pattern formed on the substrate (W) by sputtering a target material (30) disposed in the vacuum vessel (21) by using the plasma are alternately repeated. In the plasma processing method, a uniform in-plane distribution is maintained over a time period from the start to the end of plasma processing by changing a radius of a magnetic neutral line (25) in accordance with progress of the plasma processing including the etching processing and the processing of forming a protective film for the substrate (W).

摘要翻译： 本发明提供一种能够通过优化蚀刻条件从蚀刻开始到结束来保持均匀的面内分布的等离子体处理方法。 本发明的等离子体处理方法中，使用在真空容器（21）中形成的等离子体，对其表面上形成有掩模图案的基板（W）进行蚀刻的工序， 交替地重复通过溅射设置在真空容器（21）中的目标材料（30）在基板（W）上形成的蚀刻图案的侧壁部分上的保护膜。 在等离子体处理方法中，根据包括蚀刻的等离子体处理的进展，通过改变磁性中性线（25）的半径，在从等离子体处理的开始到结束的时间段内保持均匀的面内分布 处理和形成用于基板（W）的保护膜的处理。