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公开(公告)号：US20180335834A1
公开(公告)日：2018-11-22
申请号：US15813813
申请日：2017-11-15
Applicant: Finch Technologies Ltd.
Inventor： Viktor Vladimirovich Erivantcev , Rustam Rafikovich Kulchurin , Alexander Sergeevich Lobanov , Iakov Evgenevich Sergeev , Alexey Ivanovich Kartashov
CPC classification number: G06F3/012 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , G06F3/011 , G06F3/016
Abstract: A system including: two arm modules each having an inertial measurement unit and attached to an upper arm of a user to measure the current orientations of the upper arms of the user; a head module having an inertial measurement unit and attached to the head of the user to measure the current orientation of the head; and a computing device coupled to the arm modules and the head module to calculate, based on the current orientations of the upper arms and the current orientation of the head, the current orientation of the torso of the user.
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公开(公告)号：US20180328957A1
公开(公告)日：2018-11-15
申请号：US15771869
申请日：2015-12-17
Applicant: Intel Corporation
Inventor： Feras EID , Henning BRAUNISCH , Georgios C. DOGIAMIS , Sasha N. OSTER
IPC: G01P15/097 , B81B7/00 , B81C1/00 , G01P15/08
CPC classification number: G01P15/097 , B81B7/0006 , B81B2201/0235 , B81B2201/0242 , B81B2203/0118 , B81B2203/04 , B81B2203/053 , B81B2207/012 , B81B2207/07 , B81C1/00166 , B81C1/0023 , G01P15/0802
Abstract: Embodiments of the invention include a microelectronic device having a sensing device and methods of forming the sensing device. In an embodiment, the sensing device includes a mass and a plurality of beams to suspend the mass. Each beam comprises first and second conductive layers and an insulating layer positioned between the first and second conductive layers to electrically isolate the first and second conductive layers. The first conductive layer is associated with drive signals and the second conductive layer is associated with sense signals of the sensing device.
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公开(公告)号：US20180238927A1
公开(公告)日：2018-08-23
申请号：US15586497
申请日：2017-05-04
Applicant: InvenSense, Inc.
Inventor： Alexander Castro , Matthew Thompson , Leonardo Baldasarre , Sarah Nitzan , Houri Johari-Galle
IPC: G01P15/125 , B81B3/00
CPC classification number: G01P15/125 , B81B3/0078 , B81B2201/0235 , B81B2201/0242 , G01P15/0802
Abstract: A MEMS sensor includes a proof mass that is suspended over a substrate. A sense electrode is located on a top surface of the substrate parallel to the proof mass, and forms a capacitor with the proof mass. The sense electrodes have a plurality of slots that provide improved performance for the MEMS sensor. A measured value sensed by the MEMS sensor is determined based on the movement of the proof mass relative to the slotted sense electrode.
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34.发明申请公开(公告)号：US20180237290A1
公开(公告)日：2018-08-23
申请号：US15887567
申请日：2018-02-02
Applicant: Robert Bosch GmbH
Inventor： Daniel Haug , Hans-Peter Baer , Mike Schwarz , Volkmar Senz
CPC classification number: B81B3/0072 , B81B7/0016 , B81B2201/0235 , B81B2203/0127 , B81C1/00666 , B81C2201/0132 , B81C2203/0118 , B81C2203/032
Abstract: A micromechanical system including a sensitive element, the system including a first area in which the sensitive element is situated, and a second area which at least partially surrounds the first area. Furthermore, the system includes a holding element having an elastic property, which joins the first area to the second area, and a joining material, with the aid of which the second area may be joined to a substrate. A spacing area is provided between the first area and the second area. The joining material extends into the spacing area so that a possible movement of the first area caused by the elastic property of the holding element is limited.
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公开(公告)号：US10050155B2
公开(公告)日：2018-08-14
申请号：US15005783
申请日：2016-01-25
Applicant: Fairchild Semiconductor Corporation
Inventor： Cenk Acar
IPC: G01P21/02 , H01L29/84 , G01C19/5755 , G01P15/125 , G01P15/18 , B81B7/04 , G01P15/08
CPC classification number: H01L29/84 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , B81B2203/051 , B81B2203/053 , B81B2203/055 , B81B2203/056 , B81B2203/058 , B81B2207/094 , G01C19/5755 , G01P15/125 , G01P15/18 , G01P2015/0848
Abstract: This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane of a device layer. The single proof-mass 3-axis gyroscope can include a main proof-mass section suspended about a single, central anchor, the main proof-mass section including a radial portion extending outward towards an edge of the 3-axis gyroscope sensor, a central suspension system configured to suspend the 3-axis gyroscope from the single, central anchor, and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion, wherein the drive electrode and the central suspension system are configured to oscillate the 3-axis gyroscope about a z-axis normal to the x-y plane at a drive frequency.
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Patent Agency Ranking
公开(公告)号：US20180210005A1
公开(公告)日：2018-07-26
申请号：US15742550
申请日：2015-07-10
Applicant: Hitachi, Ltd.
Inventor： Atsushi ISOBE , Yuki FURUBAYASHI , Takashi OSHIMA , Yuudai KAMADA , Takashi SHIOTA , Chisaki TAKUBO , Noriyuki SAKUMA
IPC: G01P15/125 , G01P15/13 , G01P15/08 , G01P15/18
CPC classification number: G01P15/125 , B81B2201/0235 , G01P15/0802 , G01P15/131 , G01P15/18
Abstract: There is provided an inertia sensor with low noise and high sensitivity. The inertia sensor captures a physical quantity as a change of electrostatic capacitance and detects the physical quantity based on a servo voltage generating electrostatic force that cancels the change of the electrostatic capacitance. The inertia sensor includes a detection capacitor unit that captures the physical quantity as the change of the electrostatic capacitance and a servo capacitor unit to which the servo voltage is applied. Here, the detection capacitor unit and the servo capacitor unit are connected mechanically through an insulation material.
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公开(公告)号：US10017382B2
公开(公告)日：2018-07-10
申请号：US15043850
申请日：2016-02-15
Inventor： Chia-Hua Chu , Chun-Wen Cheng
IPC: H01L21/00 , B81C1/00 , B81B3/00 , G01C19/56 , G01P15/00 , G01L19/00 , G01L9/00 , G01P15/08 , G01P15/125 , B81B7/04 , G01C19/5769 , B81B7/02 , B81B7/00
CPC classification number: B81C1/00293 , B81B3/0021 , B81B7/0041 , B81B7/007 , B81B7/02 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81C1/00134 , B81C1/00309 , B81C2201/013 , B81C2203/0118 , G01C19/56 , G01C19/5769 , G01L9/0044 , G01L19/0076 , G01L19/0092 , G01P15/00 , G01P15/0802 , G01P15/125
Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
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38.发明申请公开(公告)号：US20180186627A1
公开(公告)日：2018-07-05
申请号：US15857461
申请日：2017-12-28
Applicant: Intel IP Corporation
Inventor： Gerald Ofner , Thorsten Meyer , Reinhard Mahnkopf , Christian Geissler , Andreas Augustin
CPC classification number: B81C1/00238 , B81B7/008 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/10 , B81B2207/012 , B81B2207/053 , B81B2207/07 , B81B2207/096 , B81C1/0023 , B81C2203/0792 , H01L2224/16225 , H01L2224/48091 , H01L2924/15311 , H01L2924/00014
Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.
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公开(公告)号：US10005660B1
公开(公告)日：2018-06-26
申请号：US15433793
申请日：2017-02-15
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Kay Stefan Essig
CPC classification number: B81C1/00238 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81C2203/0792
Abstract: The present disclosure relates to a semiconductor package device. The semiconductor package device includes a carrier, a first Micro Electro Mechanical Systems (MEMS) and a first electronic component. The carrier has a first surface and a second surface opposite the first surface. The MEMS is disposed in the carrier. The first MEMS is exposed from the first surface of the carrier and is exposed from the second surface of the carrier. The first electronic component is disposed on the first surface of the carrier and is electrically connected to the first MEMS.
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公开(公告)号：US20180170745A1
公开(公告)日：2018-06-21
申请号：US15813990
申请日：2017-11-15
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen , Wolfgang Friza , Marc Fueldner
CPC classification number: B81B3/007 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2203/0361 , B81B2203/04 , B81C1/00619 , B81C2201/0109 , B81C2201/0132 , B81C2201/0133 , H04R9/08 , H04R17/02 , H04R19/005 , H04R31/00 , H04R31/003 , H04R2201/003
Abstract: A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. Furthermore, the semiconductor device comprises a first backplate structure, which is arranged on a first side of the membrane structure, and a second backplate structure, which is arranged on a second side of the membrane structure. The semiconductor device furthermore comprises a vertical connection structure, which connects the first backplate structure to the second backplate structure. In this case, the vertical connection structure extends through the opening.
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