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61 条记录 (耗时 0.024 秒)

    Method to direct pattern metals on a substrate
    32.
    发明授权
    Method to direct pattern metals on a substrate 有权
    将图案金属引导到基底上的方法

    公开(公告)号：US08278220B2

    公开(公告)日：2012-10-02

    申请号：US12210781

    申请日：2008-09-15

    申请人： Theresa Holtermann ,  Anthony Graupera ,  Michael Dibattista

    发明人： Theresa Holtermann ,  Anthony Graupera ,  Michael Dibattista

    IPC分类号： H01L21/311

    CPC分类号： H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

    摘要翻译： 通过产生或暴露具有增加的导电性的图案化区域，然后使用电沉积在该区域上形成导体来产生微观金属结构。 在一些实施例中，在衬底上形成微观金属结构，然后蚀刻衬底以从衬底去除结构。 在一些实施例中，没有沉积前体气体的聚焦聚焦的镓离子束扫描硅衬底上的图案，以产生导电图案，然后通过电化学沉积一种或多种金属形成铜结构。 该结构可以通过蚀刻从衬底中脱离，或者可以在适当的位置使用。 可以使用光束来访问晶体管的有源层，然后可以将导体电沉积以提供用于在其工作时感测或修改晶体管操作的引线。

    Projection ion beam machining apparatus
    37.
    发明授权
    Projection ion beam machining apparatus 有权
    投影离子束加工设备

    公开(公告)号：US06583426B1

    公开(公告)日：2003-06-24

    申请号：US09508265

    申请日：2000-05-22

    申请人： Yoshimi Kawanami ,  Kaoru Umemura ,  Yuuichi Madokoro ,  Satoshi Tomimatsu

    发明人： Yoshimi Kawanami ,  Kaoru Umemura ,  Yuuichi Madokoro ,  Satoshi Tomimatsu

    IPC分类号： G21K510

    CPC分类号： H01J37/3056 ,  H01J2237/31737 ,  H01J2237/3174

    摘要： In a projection ion beam machining apparatus having a liquid metal ion source, a combination of two or three electrostatic lenses arranged between the liquid metal ion source and a sample and a stencil mask exchangeably arranged in the combination of the electrostatic lenses, when a distance from substantial center of the electrostatic lens most proximate to the ion source and an ion emitting portion of the ion source is designated by Lo, a distance from the substantial center of the electiostatic lens most proximiate to the sample and the surface of the sample is designated by Li and a distance between the substantial centers of the two lenses is designated by L, by making a value of (L/Lo)(L/Li) equal to or larger than 400, current density on the sample of ion beam accelerated to several 10 kV for projecting a pattern of a stencil mask can be made equal to or larger than 20 mA per 1 square cm and resolution of edge can be made equal to or smaller than 0.2 &mgr;m when the size of the ion beam is 5 &mgr;m. As a result, a region having a size equal to or smaller than several 10 &mgr;m can be machined at speed several times or more as fast as that of FIB having equivalent machining accuracy.

    摘要翻译： 在具有液体金属离子源的投影离子束加工设备中，配置在液体金属离子源和样品之间的两个或三个静电透镜的组合和可交换地布置在静电透镜的组合中的模板掩模，当距离 最接近离子源的静电透镜的实质中心和离子源的离子发射部分由Lo表示，距离最接近的静电透镜的实质中心到样品的距离，并且样品的表面由 Li和两个透镜的实质中心之间的距离由L表示，通过使（L / Lo）（L / Li）的值等于或大于400，离子束样品上的电流密度加速到几 可以将用于投影模板掩模图案的10kV用于每1平方厘米等于或大于20mA，当离子的尺寸可以使边缘分辨率等于或小于0.2μm 梁是5 mum。 结果，可以以等于加工精度的FIB的速度加工几倍或更多倍的尺寸等于或小于几个10μm的区域。

    Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
    38.
    发明申请
    Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams 审中-公开
    用于通过离子束在半导体晶片的表面上形成纳米结构的装置

    公开(公告)号：US20020170497A1

    公开(公告)日：2002-11-21

    申请号：US10069656

    申请日：2002-05-14

    发明人： Valery Konstantinovich Smirnov ,  Dmitry Stanislavovich Kibalov

    IPC分类号： C23C016/00

    CPC分类号： H01J37/3178 ,  H01J2237/31737

    摘要： The invention makes it possible to develop the devices for producing nanostructures which are used for manufacturing the semiconductor items having high resolution optical instruments. The inventive device comprises a vacuum chamber provided with a pumping and annealing system, a unit for introducing the semiconductor wafers into the chamber, a controllable energy ion source, a mass-separator, an electron detector, a holder for the semiconductor wafer, a device for measuring the ion current, a quadrupole mass-analyzer and a computer provided with a monitor and interface. Axes of column of the ion beam transportation, an optical microscope and electron projector are arranged on the same plane as a normal line to the semiconductor wafer in a working position thereof and intercross at the same point on the front face of the wafer. An optical microscope and electron projector are arranged on the front face of the wafer and have a minimal angle therebetween.

    摘要翻译： 本发明使得可以开发用于制造具有高分辨率光学仪器的半导体产品的纳米结构的制造装置。 本发明的装置包括设置有泵送和退火系统的真空室，用于将半导体晶片引入室中的单元，可控能量离子源，质量分离器，电子检测器，用于半导体晶片的保持器， 用于测量离子电流，四极质量分析仪和配有监视器和接口的计算机。 离子束输送的列轴，光学显微镜和电子投影仪在其工作位置上与半导体晶片的法线布置在同一平面上，并且在晶片的正面上的同一点处交叉。 光学显微镜和电子投影仪布置在晶片的前表面上并且在其间具有最小的角度。

    Fabrication of high resistivity structures using focused ion beams
    39.
    发明申请
    Fabrication of high resistivity structures using focused ion beams 有权
    使用聚焦离子束制造高电阻率结构

    公开(公告)号：US20020102861A1

    公开(公告)日：2002-08-01

    申请号：US10055320

    申请日：2002-01-23

    发明人： Neil J. Bassom ,  Tung Mai

    IPC分类号： H01L021/44 ,  H01L021/31 ,  H01L021/469 ,  C23C016/00

    CPC分类号： H01L28/24 ,  C23C16/047 ,  H01J37/08 ,  H01J2237/31737 ,  H01J2237/31749 ,  H01L21/28562

    摘要： The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably comprises a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.

    摘要翻译： 本发明提供了一种用于通过将聚焦离子束引向目标上的冲击点并将前体气体引向冲击点的方式，用于在目标上产生微观高电阻率结构的方法，所述离子束使前体气体分解并由此沉积 在靶上表现出高电阻率的结构。 前体气体优选包括形成导电层的第一化合物和如果在离子束存在下单独施加第一和第二化合物中的每一种，则形成绝缘层的第二化合物。

    Method of wiring semiconductor device using energy beam
    40.
    发明授权
    Method of wiring semiconductor device using energy beam 失效
    使用能量束布线半导体器件的方法

    公开(公告)号：US5306663A

    公开(公告)日：1994-04-26

    申请号：US873845

    申请日：1992-04-27

    申请人： Hiroaki Morimoto

    发明人： Hiroaki Morimoto

    IPC分类号： H01L21/3205 ,  B23K15/00 ,  B23K15/02 ,  H01J37/305 ,  H01J37/317 ,  H01L21/285

    CPC分类号： H01J37/3178 ,  B23K15/0013 ,  B23K15/004 ,  B23K15/02 ,  H01J37/3056 ,  H01J2237/31737

    摘要： A method of wiring a semiconductor device which allows a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus formed thereby includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. A wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beram column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.

    摘要翻译： 一种半导体器件布线方法，其能够简化制造步骤，而不会降低空中布线的绝缘特性。 由此形成的半导体器件布线装置包括设置在基板50上方的第一梁柱1a和水平设置的第二梁柱1b。 通过使用第一光束柱1a形成向上形成的天线的布线部分，并且通过使用第二光束柱形成水平地形成到基板50的布线层的布线部分，这导致不存在绝缘 为了简化制造步骤，需要用于空中布线的薄膜。