公开(公告)号：US20180138020A1

公开(公告)日：2018-05-17

申请号：US15863326

申请日：2018-01-05

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Yong-Seok Hwang ,  Kyong-Jae Chung

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J27/16 ,  H01J37/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32669 ,  H01J2237/024 ,  H01J2237/065 ,  H01J2237/31701 ,  H01J2237/327 ,  H01J2237/3365

Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

公开(公告)号：US09953801B1

公开(公告)日：2018-04-24

申请号：US15363728

申请日：2016-11-29

Applicant: Axcelis Technologies, Inc.

Inventor： Michael Paul Cristoforo ,  Justin White McCabe

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/05 ,  H01J37/023 ,  H01J37/08 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/24585 ,  H01J2237/31701

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

公开(公告)号：US09925292B2

公开(公告)日：2018-03-27

申请号：US15268717

申请日：2016-09-19

Applicant: Global Plasma Solutions, LLC

Inventor： Charles Houston Waddell

IPC: H01T23/00 ,  A61L9/22 ,  B03C3/011 ,  B03C3/41 ,  F02M27/04 ,  F16M13/02 ,  H01J37/16 ,  H01J37/30 ,  H01J27/02 ,  F01N3/08 ,  F02M35/02 ,  F24F3/16 ,  B03C3/04 ,  B03C3/82 ,  H01J37/08 ,  B01D46/00 ,  B01D46/52 ,  B03C3/155

CPC classification number: A61L9/22 ,  A61L2209/16 ,  B01D46/0032 ,  B01D46/521 ,  B03C3/011 ,  B03C3/04 ,  B03C3/155 ,  B03C3/41 ,  B03C3/82 ,  F01N3/0892 ,  F02M27/04 ,  F02M27/042 ,  F02M35/0205 ,  F02M35/0217 ,  F16M13/02 ,  F24F3/166 ,  F24F2003/1682 ,  H01J27/022 ,  H01J27/028 ,  H01J37/08 ,  H01J37/16 ,  H01J37/3002 ,  H01T23/00

Abstract: The present invention provides methods and systems for an ion generator mounting device for application of bipolar ionization to airflow within a conduit, the device includes a housing for mounting to the conduit having an internal panel within the enclosure, and an arm extending from the housing for extension into the conduit and containing at least one opening. At least one coupling for mounting an ion generator to the arm oriented with an axis extending between a pair of electrodes of the ion generator being generally perpendicular to a flow direction of the airflow within the conduit.

公开(公告)号：US20180076009A1

公开(公告)日：2018-03-15

申请号：US15813895

申请日：2017-11-15

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/32 ,  H01Q21/00 ,  H01P3/127 ,  H01P3/12 ,  C23C16/513 ,  H01J37/05 ,  C23C16/511 ,  H01J37/08

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

公开(公告)号：US20180068830A1

公开(公告)日：2018-03-08

申请号：US15809252

申请日：2017-11-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Vikram M. Bhosle ,  John A. Frontiero ,  Nicholas P.T. Bateman ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Min-Sung Jeon ,  Peter F. Kurunczi ,  Christopher J. Leavitt

IPC: H01J37/317 ,  C23C16/513 ,  H01J37/08 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C16/513 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0822

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

公开(公告)号：US09905397B2

公开(公告)日：2018-02-27

申请号：US15457698

申请日：2017-03-13

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/08 ,  H01J37/147 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3172 ,  H01J2237/24535 ,  H01J2237/30488

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

公开(公告)号：US09899188B2

公开(公告)日：2018-02-20

申请号：US14807411

申请日：2015-07-23

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Mark R. Amato ,  William Davis Lee ,  Jillian Reno

IPC: H01J37/317 ,  H01L21/265 ,  H01L21/425 ,  H01J37/08 ,  H01J37/20 ,  H01J37/302 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J37/20 ,  H01J37/3026 ,  H01J2237/20214 ,  H01J2237/31761 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/425

Abstract: Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition.

公开(公告)号：US09887067B2

公开(公告)日：2018-02-06

申请号：US14692159

申请日：2015-04-21

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Vikram M. Bhosle ,  John A. Frontiero

IPC: C23C18/48 ,  H01J37/317 ,  H01J37/08 ,  C23C16/513 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C16/513 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0822

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

公开(公告)号：US20180012727A1

公开(公告)日：2018-01-11

申请号：US15676926

申请日：2017-08-14

Applicant: Mark R. Amato ,  W. Davis Lee

Inventor： Mark R. Amato ,  W. Davis Lee

IPC: H01J37/08 ,  A61N5/10 ,  A61B6/03 ,  A61B6/00

CPC classification number: H01J37/08 ,  A61B6/032 ,  A61B6/037 ,  A61B6/4035 ,  A61B6/4258 ,  A61B6/5205 ,  A61N5/1037 ,  A61N5/1039 ,  A61N5/1049 ,  A61N5/1067 ,  A61N5/1069 ,  A61N5/107 ,  A61N5/1077 ,  A61N5/1082 ,  A61N2005/1051 ,  A61N2005/1054 ,  A61N2005/1061 ,  A61N2005/1087 ,  A61N2005/1095 ,  A61N2005/1097 ,  G21K1/10 ,  G21K5/04 ,  H01J2237/004

Abstract: The invention comprises a method and apparatus for slowing positively charged particles, comprising the steps of: (1) transporting the positively charged particles from an accelerator, along a beam transport line, and into a nozzle system; (2) placing a first liquid in a first chamber in a beam path of the positively charged particles; (3) placing a second liquid in a second chamber in the beam path of the positively charged particles; (4) moving the first and second chamber with the nozzle system; (5) slowing the positively charged particles using the first liquid and the second liquid; (6) moving the first chamber in a first direction to yield a longer first pathlength of the positively charged particles through the first chamber; and (7) moving the second chamber opposite the first direction to yield a longer second pathlength of the positively charged particles through the second chamber.

公开(公告)号：US09859086B2

公开(公告)日：2018-01-02

申请号：US13781913

申请日：2013-03-01

Applicant: Kabushiki Kaisha Toshiba

Inventor： Akiko Kakutani ,  Kiyoshi Hashimoto ,  Kiyokazu Sato ,  Akihiro Osanai ,  Takeshi Yoshiyuki ,  Tsutomu Kurusu

IPC: H01J27/24 ,  H01J27/02 ,  A61N5/10 ,  H01J37/08

CPC classification number: H01J27/24 ,  A61N2005/1085 ,  H01J27/024 ,  H01J37/08

Abstract: According to one embodiment, there is provided an ion source. The ion source includes a vacuum-exhausted vacuum chamber, a target which is set in the vacuum chamber and generates a plurality of valences of ions by irradiation of a laser beam, an acceleration electrode which is applied with voltage in order to accelerate the ions generated by the target, and an intermediate electrode which is provided between the target and the acceleration electrode and is applied with reverse voltage of the voltage applied to the acceleration electrode.