公开(公告)号：US20240030679A1

公开(公告)日：2024-01-25

申请号：US18376841

申请日：2023-10-05

申请人： TRANSWAVE PHOTONICS, LLC.

发明人： Seungyong JUNG ,  Mikhail A. BELKIN

IPC分类号： H01S5/024 ,  H01S5/34 ,  G02B6/12 ,  H01S5/02355 ,  H01S5/02 ,  H01S5/0234

CPC分类号： H01S5/02469 ,  H01S5/3402 ,  G02B6/12 ,  H01S5/02355 ,  H01S5/0217 ,  H01S5/0201 ,  H01S5/0234

摘要： Structures and methods for reducing the thermal resistance of quantum cascade laser (QCL) devices and QCL-based photonic integrated circuits (QCL-PIC) are provided, wherein, in various embodiments, the native substrate of QCL and QCL-PIC devices is replaced with a foreign substrate that has very high thermal conductivity, for example, using wafer bonding methods. In some examples, wafer bonding of processed, semi-processed, or unprocessed QCL and QCL-PIC epilayers or devices on their native substrate to a high-thermal-conductivity substrate is performed, followed by removal of the native substrate via selective etching, and performing additional device processing if necessary. Thereafter, in some embodiments, cleaving or dicing individual devices from the bonded wafers may be performed, for example, for mounting onto heat sinks.

公开(公告)号：US11862939B1

公开(公告)日：2024-01-02

申请号：US17843104

申请日：2022-06-17

申请人： KYOCERA SLD Laser, Inc.

发明人： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC分类号： H01S5/343 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22 ,  H01S5/042 ,  H01S5/0234 ,  H01S5/20 ,  H01S5/30

CPC分类号： H01S5/34333 ,  H01S5/021 ,  H01S5/0206 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0234 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/222 ,  H01S5/2214 ,  H01S5/32308 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/30 ,  H01S2301/173 ,  H01S2302/00

摘要： An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

公开(公告)号：US11784463B2

公开(公告)日：2023-10-10

申请号：US17739309

申请日：2022-05-09

申请人： Marvell Asia Pte Ltd.

发明人： Radhakrishnan L. Nagarajan ,  Masaki Kato ,  Nourhan Eid ,  Kenneth Ling Wong

IPC分类号： H01S5/0687 ,  H01S5/343 ,  H01S5/40 ,  H01S5/10 ,  H01S5/06 ,  H01S5/028 ,  H01S5/026 ,  H01S5/02 ,  H01S5/14 ,  H01S5/0234 ,  H01S5/02326 ,  H01S5/065 ,  H01S5/0625 ,  H01S5/0238

CPC分类号： H01S5/0687 ,  H01S5/021 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0234 ,  H01S5/0238 ,  H01S5/0261 ,  H01S5/0287 ,  H01S5/02326 ,  H01S5/0612 ,  H01S5/0656 ,  H01S5/06256 ,  H01S5/1007 ,  H01S5/1021 ,  H01S5/1025 ,  H01S5/1042 ,  H01S5/142 ,  H01S5/34306 ,  H01S5/40 ,  H01S5/4006

摘要： A tunable laser for a transceiver includes a silicon photonics substrate, first and second patterned regions each being defined in the substrate a step lower than a flat surface region of the substrate, first and second laser diode chips arranged in the first and second patterned regions, the patterned regions being configured to align the gain regions of the first and second laser diode chips with integrated couplers formed in the substrate adjacent to the first and second patterned regions to facilitate flip-bonding the first and second laser diode chips within the patterned regions, and a tuning filter coupled to the first laser diode chip and the second laser diode chip via the integrated couplers. The tuning filter is configured to receive laser light from each of the first and second laser diode chips and generate a laser output having a gain determined by each of the gain regions.

公开(公告)号：US11728614B2

公开(公告)日：2023-08-15

申请号：US17895440

申请日：2022-08-25

申请人： Marvell Asia Pte Ltd.

发明人： Xiaoguang He ,  Radhakrishnan L. Nagarajan

IPC分类号： H04B10/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H04B10/27 ,  H04B10/07 ,  G01R31/26 ,  G02B6/12 ,  H01S5/0234 ,  H01S5/12

CPC分类号： H01S5/0042 ,  G01R31/2635 ,  G02B6/12004 ,  H01S5/021 ,  H01S5/0234 ,  H01S5/323 ,  H04B10/07 ,  H04B10/27 ,  H01S5/12

摘要： A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

公开(公告)号：US11675114B2

公开(公告)日：2023-06-13

申请号：US16042319

申请日：2018-07-23

申请人： II-VI Delaware, Inc.

发明人： Jean Axel Edmond Teissier ,  Julien Boucart

IPC分类号： G02B5/18 ,  H01S5/183 ,  H01S5/42 ,  H01S5/0234

CPC分类号： G02B5/1842 ,  G02B5/1828 ,  G02B5/1857 ,  H01S5/0234 ,  H01S5/183 ,  H01S5/423

摘要： A structured light projector for generating a far-field image of light dots in a defined pattern is proposed, where the structured light projector includes a light source providing as an output a non-collimated light beam and a specialized diffractive optical element disposed to intercept the non-collimated light beam. The specialized diffractive optical element is formed to exhibit a non-uniform pattern of grating features configured to compensate for the non-planar wavefront and phase retardation of the non-collimated output beam, providing as an output of the projector an interference pattern of light dots exhibiting the desired configuration.

公开(公告)号：US20230101190A1

公开(公告)日：2023-03-30

申请号：US18077234

申请日：2022-12-08

申请人： Chen-Fu CHU

发明人： Chen-Fu CHU

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L33/56 ,  H01L33/50 ,  H01L33/62 ,  H01L33/36 ,  H01L25/16 ,  H01L33/52 ,  C23C14/34 ,  B05C5/02 ,  H01L21/78 ,  H01S5/0234 ,  H01L33/44 ,  B05C9/14 ,  C23C16/50 ,  C23C14/14 ,  H01L33/00 ,  H01S5/023 ,  H01S5/0235 ,  H01L33/58 ,  H01L31/16 ,  B05C9/12 ,  C23C16/455 ,  H01L21/304 ,  H01L33/60 ,  H01L33/64 ,  H01S5/02234 ,  H01S5/02232 ,  H01S5/0233 ,  H01L33/32

摘要： Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

公开(公告)号：US20220416900A1

公开(公告)日：2022-12-29

申请号：US17857397

申请日：2022-07-05

申请人： Marvell Asia Pte Ltd.

发明人： Ding Liang ,  Mark Patterson ,  Roberto Coccioli ,  Radhakrishnan L. Nagarajan

IPC分类号： H04B10/40 ,  G02B6/42 ,  H01S5/02 ,  H01S5/0234

摘要： An optical transceiver includes a silicon photonics substrate, transmitter circuitry, and receiver circuitry that are heterogeneously integrated. The transmitter circuitry includes a plurality of laser devices formed on the silicon photonics substrate, each of the plurality of laser devices configured to generate a respective laser light, a plurality of modulators formed on the silicon photonics substrate, each of the plurality of modulators configured to modulate the laser lights based on driver signals and output, from the silicon photonics substrate, the modulated laser lights, and a driver formed on the silicon photonics substrate and configured to generate the driver signals. The receiver circuitry includes a photodetector configured to receive a plurality of optical signals and convert the plurality of optical signals to respective electrical signals and a transimpedance amplifier device configured to receive the electrical signals and output the electrical signals from the silicon photonics substrate as electrical outputs.

公开(公告)号：US20220360039A1

公开(公告)日：2022-11-10

申请号：US17764912

申请日：2020-09-30

申请人： OSRAM Opto Semiconductors GmbH ,  Lumus Ltd.

发明人： Ann Russell ,  Yochay Danziger ,  Jörg Erich Sorg ,  Hubert Halbritter ,  Alan Lenef

IPC分类号： H01S5/02255 ,  H01S5/023 ,  H01S5/40 ,  H01S5/02335 ,  H01S5/0234 ,  H01S5/02257

摘要： A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

公开(公告)号：US20220344893A1

公开(公告)日：2022-10-27

申请号：US17641164

申请日：2019-12-04

申请人： Mitsubishi Electric Corporation

发明人： Chikara WATATANI ,  Motoharu MIYASHITA ,  Takehiro NISHIDA

IPC分类号： H01S5/0237 ,  H01S5/0234 ,  H01S5/22 ,  H01S5/042

摘要： Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.

公开(公告)号：US11424595B2

公开(公告)日：2022-08-23

申请号：US16820263

申请日：2020-03-16

申请人： OEpic SEMICONDUCTORS, INC

发明人： Yi-Ching Pao ,  Majid Riaziat ,  Ta-Chung Wu ,  Wilson Kyi ,  James Pao

IPC分类号： H01S5/183 ,  H01S5/026 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/34 ,  H01S5/02 ,  H01S5/20 ,  H01S5/042 ,  H01S5/42 ,  H01S5/024

摘要： A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.