Abstract:
A controller includes an internal memory to store an address and a memory control unit operatively coupled with the internal memory. The memory control unit includes logic to identify a malfunctioning address of primary data storage elements within an external memory device, the external memory device being another semiconductor device separate from the controller, store the malfunctioning address in the internal memory, and transmit, to the external memory device, a command to initiate a repair of the malfunctioning address using redundant data storage elements and an indication of an address associated with the malfunctioning address.
Abstract:
Described is a printed-circuit board (PCB) that supports memory systems in which the memory core organization changes with device width. The PCB includes a memory-controller mounting location and module connectors to receive respective memory modules. Each module connector connects directly to the controller mounting location via a respective set of system data lines that does not connect to any other module connector. System data lines also extend directly between module connectors to support memory configurations with different numbers of modules. The memory systems support one memory module of a wide data width or multiple memory modules of narrower data widths. The number of physical memory banks accessed reduces with device data width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance.
Abstract:
A memory system supports high-performance and low-power modes. The memory system includes a memory core and a core interface. The memory core employs core supply voltages that remain the same in both modes. Supply voltages and signaling rates for the core interface may be scaled down to save power. Level shifters between the memory core and core interface level shift signals as needed to accommodate the signaling voltages used by the core interface in the different modes.
Abstract:
A signaling circuit having a selectable-tap equalizer. The signaling circuit includes a buffer, a select circuit and an equalizing circuit. The buffer is used to store a plurality of data values that correspond to data signals transmitted on a signaling path during a first time interval. The select circuit is coupled to the buffer to select a subset of data values from the plurality of data values according to a select value. The equalizing circuit is coupled to receive the subset of data values from the select circuit and is adapted to adjust, according to the subset of data values, a signal level that corresponds to a data signal transmitted on the signaling path during a second time interval.
Abstract:
A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.
Abstract:
An image sensor architecture is implemented within an image sensor system. Image sensor pixels include pixel regions, and each pixel region includes a photosensor, a reset circuit, and a readout circuit. The readout circuit receives enable signals from an enable signal line, and outputs a pixel signal representative of light captured by the photosensor on a combination input/output line. The reset circuit resets the photosensor in response to receiving a first reset signal on a reset line and a second reset signal on the combination input/output line.
Abstract:
An on-chip AC coupled receiver with baseline wander compensation. The receiver may be used for either single ended or differential signals. The receiver includes an input terminal to receive an input signal. AC coupling circuitry is between the input terminal and a node and couples the input signal into a coupled signal at the node. A control loop senses low frequency signal content at the node and uses a linear buffer in adjusting the coupled signal at the node based on the low frequency signal content. The operation of the control loop compensates for potential baseline wander in the coupled signal. An input stage to recovers data from the coupled signal at the node.
Abstract:
An integrated-circuit image sensor that includes an array of pixel regions composed of binary pixel circuits. Each binary pixel circuit includes a binary amplifier having an input and an output. The binary amplifier generates a binary signal at the output in response to whether an input voltage at the input exceeds a switching threshold voltage level of the binary amplifier. A light-detecting element of the binary pixel circuit is coupled to the input of the binary amplifier. Initialization circuitry of the binary pixel circuit is coupled to the input of the binary amplifier. The initialization circuitry sets the input voltage to a level that is offset relative to the switching threshold voltage level of the binary amplifier by an offset voltage amount, the offset voltage amount representing a threshold amount of light incident on the light detecting element.
Abstract:
An IC die transmits command signals, address signals and data signals to a flash memory device at respective times via a time-multiplexed external signaling line, the data signals representing data to be stored within an array of non-volatile storage elements of the flash memory device. The IC die additionally transmits a control signal to the flash memory device via one or more external control signal lines, the control signal directing the flash memory device to switchably couple an on-die termination element to the time-multiplexed signaling line.
Abstract:
Image-sensing devices include odd-symmetry gratings that cast interference patterns over a photodetector array. Grating features offer considerable insensitivity to the wavelength of incident light, and also to the manufactured distance between the grating and the photodetector array. Photographs and other image information can be extracted from interference patterns captured by the photodetector array. Images can be captured without a lens, and cameras can be made smaller than those that are reliant on lenses and ray-optical focusing.