Process for the production of a photovoltaic element
    42.
    发明授权
    Process for the production of a photovoltaic element 失效
    制造光电元件的方法

    公开(公告)号:US5859397A

    公开(公告)日:1999-01-12

    申请号:US857905

    申请日:1997-05-16

    摘要: A process for producing a photovoltaic element, said process comprising the steps of: providing a photovoltaic element comprising a lower electrode layer comprising a metallic layer comprising aluminum or an aluminum compound and a transparent and electrically conductive layer, a photoelectric conversion semiconductor layer, and a transparent electrode layer stacked in the named order on an electrically conductive surface of a substrate, and immersing said photovoltaic element in an electrolyte solution to passivate an short-circuited current path defect present in said photovoltaic element by the action of an electric field, wherein said electrolyte solution has a chlorine ion content of 0.03 mol/l or less.

    摘要翻译: 一种制造光伏元件的方法,所述方法包括以下步骤:提供包括下电极层的光电元件,该下电极层包括由铝或铝化合物构成的金属层和透明导电层,光电转换半导体层和 透明电极层按照所述顺序层叠在基板的导电表面上,并将所述光电元件浸入电解液中,以通过电场的作用钝化存在于所述光电元件中的短路电流路径缺陷,其中所述 电解质溶液的氯离子含量为0.03mol / l以下。

    Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same
    45.
    发明授权
    Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same 有权
    半导体集成电路器件的制造方法以及使用该半导体集成电路器件的薄膜探针片的制造方法

    公开(公告)号:US08062911B2

    公开(公告)日:2011-11-22

    申请号:US11958369

    申请日:2007-12-17

    IPC分类号: H01L21/66 G01R31/26

    CPC分类号: G01R3/00 G01R1/07342

    摘要: A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

    摘要翻译: 通过选择性地在晶片的主表面上沉积在要形成金属膜的区域中的铜膜和当探针卡是在粘合环外部时将在粘合环外部的区域,制造具有足够高度的探针 制造的 形成金属膜,聚酰亚胺膜,互连,另一聚酰亚胺膜,另一互连和另外的聚酰亚胺膜; 然后取出晶片和铜膜。 根据本发明,在利用半导体集成电路器件的制造技术的情况下,使用具有以上述方式形成的探针的探测器(薄膜探针)进行探针测试时,可以防止探测器的破损, 待测试的晶圆。

    Manufacturing method of semiconductor integrated circuit device
    47.
    发明授权
    Manufacturing method of semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号:US07598100B2

    公开(公告)日:2009-10-06

    申请号:US11719112

    申请日:2004-11-18

    CPC分类号: G01R1/0735 G01R3/00

    摘要: As the thickness of the card holder for preventing warping of a multilayered wiring substrate 1 is increased, there occurs a problem that a thin film sheet 2 is buried in a card holder and secure contact between probes 7 and test pads cannot be realized. For its prevention, the thin film sheet 2 and a bonding ring 6 are bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet 2, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ring 6 defining the height up to the probe surface of the thin film sheet 2 is increased, thereby increasing the height up to the probe surface of the thin film sheet 2.

    摘要翻译: 随着用于防止多层布线基板1翘曲的卡夹的厚度增加,存在薄膜片2被埋在卡夹中并且不能实现探针7和测试垫之间的牢固接触的​​问题。 为了防止,薄膜片2和接合环6在仅向薄膜片2的中心区域IA施加张力的状态下接合,并且拉伸力不施加到外围区域 OA。 然后,限定高达薄膜片2的探针表面的高度的接合环6的高度增加,从而增加高达薄膜片2的探针表面的高度。

    Method of manufacturing a semiconductor integrated circuit device
    48.
    发明授权
    Method of manufacturing a semiconductor integrated circuit device 有权
    制造半导体集成电路器件的方法

    公开(公告)号:US07537943B2

    公开(公告)日:2009-05-26

    申请号:US11866301

    申请日:2007-10-02

    IPC分类号: H01L21/66 G01R31/26

    摘要: A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.

    摘要翻译: 提供一种制造半导体集成电路器件的技术,用于在使用由该制造技术形成的膜探针进行探针检查时,减少将异物附着于膜探针的可能性。 用于挤压薄膜片的按压部件包括相对设置在上侧的压接销接收部,用于接收凹部中的柱塞的按压销的前端,以及相对设置在下方的膜片按压部。 与膜片接触的膜片按压部具有最小的平面尺寸,能够对要进行探头检查的一个感兴趣的芯片的整个表面进行按压。

    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    50.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    制造半导体集成电路器件的方法

    公开(公告)号:US20080096295A1

    公开(公告)日:2008-04-24

    申请号:US11866301

    申请日:2007-10-02

    IPC分类号: H01L21/66

    摘要: A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.

    摘要翻译: 提供一种制造半导体集成电路器件的技术,用于在使用由该制造技术形成的膜探针进行探针检查时,减少将异物附着于膜探针的可能性。 用于挤压薄膜片的按压部件包括相对设置在上侧的压接销接收部,用于接收凹部中的柱塞的按压销的前端,以及相对设置在下方的膜片按压部。 与膜片接触的膜片按压部具有最小的平面尺寸,能够对要进行探头检查的一个感兴趣的芯片的整个表面进行按压。