公开(公告)号：US20150122426A1

公开(公告)日：2015-05-07

申请号：US14550008

申请日：2014-11-21

Applicant: Brewer Science Inc.

Inventor： Rama Puligadda ,  Xing-Fu Zhong ,  Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/683 ,  B32B38/00 ,  B32B38/10 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。

公开(公告)号：US20030129542A1

公开(公告)日：2003-07-10

申请号：US10282542

申请日：2002-10-28

Applicant: BREWER SCIENCE, INC.

Inventor： Wu-Sheng Shih ,  James E. Lamb III ,  Mark Daffron

IPC: H01L021/31 ,  H01L021/469 ,  G03F007/00

CPC classification number: B81C1/0046 ,  B81C1/00611 ,  B81C2201/0119 ,  C08G59/68 ,  C08L63/00 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/312

Abstract: The present invention is directed towards planarization materials that produce little or no volatile byproducts during the hardening process when used in contact planarization processes. The materials can be hardened by photo-irradiation or by heat during the planarization process, and they include one or more types of monomers, oligomers, or mixtures thereof, an optional cross-linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of the polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

Abstract translation: 本发明涉及在用于接触平面化处理时在硬化过程期间产生很少或不产生挥发性副产物的平面化材料。 这些材料可以在平坦化过程中通过光照射或加热来硬化，并且它们包括一种或多种类型的单体，低聚物或其混合物，任选的交联剂和任选的有机反应性溶剂。 溶剂（如果使用的话）与单体或低聚物发生化学反应，因此在固化过程中成为聚合物基质的一部分。 这些材料可用于镶嵌，双镶嵌，双层和多层应用，微机电系统（MEMS），封装，光学器件，光子学，光电子学，微电子学和传感器器件制造。

公开(公告)号：US20240030063A1

公开(公告)日：2024-01-25

申请号：US18354433

申请日：2023-07-18

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat ,  Shannon Brown ,  Joyce A. Lowes

IPC: H01L21/768 ,  G03F7/027 ,  H01L23/528

CPC classification number: H01L21/76837 ,  G03F7/027 ,  H01L21/7682 ,  H01L23/5283

Abstract: Thermally decomposable gap-fill materials are disclosed that fill small features and are completely removed by a high-temperature bake after processing. These materials are self-crosslinkable polymers. Potential applications of these materials include use as sacrificial gap-fill materials for creating air gaps, as well as protection of high-aspect-ratio or other delicate microelectronic features during processing steps.

公开(公告)号：US11768435B2

公开(公告)日：2023-09-26

申请号：US16671426

申请日：2019-11-01

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Carissa Jones

IPC: G03F7/004 ,  G03F7/095 ,  C08F212/08 ,  C08F220/28 ,  G03F7/34 ,  G03F7/16 ,  C08F220/38

CPC classification number: G03F7/0955 ,  C08F212/08 ,  C08F220/281 ,  C08F220/382 ,  G03F7/0045 ,  G03F7/165 ,  G03F7/168 ,  G03F7/34

Abstract: Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

公开(公告)号：US20230282478A1

公开(公告)日：2023-09-07

申请号：US18177546

申请日：2023-03-02

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat ,  Jakub Koza ,  Jamie Storie

IPC: H01L21/027 ,  C09D163/04 ,  C08F265/04 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0276 ,  C08F265/04 ,  C09D163/04 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/31111 ,  H01L21/31133

Abstract: Adhesive additives are disclosed that enhance spin-on carbon (SOC) resistance to SC-1 wet etch. The additives can be formed by reacting a polymer or oligomer (such as an adhesion polymer or adhesion oligomer) with 3,4,5-triacetoxybenzoic acid (TABA). When added to standard SOC layers or used as a primer between an SOC layer and substrate, these additives enhance the adhesion of the SOC layer to TiN and other substrates and reduce undercut during SC-1 wet etch.

公开(公告)号：US20220127496A1

公开(公告)日：2022-04-28

申请号：US17504272

申请日：2021-10-18

Applicant: Brewer Science, Inc.

Inventor： Rama Puligadda ,  Xiao Liu ,  Luke M. Prenger ,  Xavier Martinez

IPC: C09J5/06 ,  H01L21/683 ,  C08G73/02

Abstract: A method is described for debonding a carrier and device substrate using a high-intensity, pulsed, broadband light system that is suitable for wafer-level packaging applications. The carrier substrate is a transparent wafer with a light absorbing layer on one side of the wafer. This method utilizes the high intensity light to rapidly heat up the light absorbing layer to decompose or melt a bonding material layer that is adjacent to the light absorbing layer. After exposure to light, the carrier substrate can be lifted off the surface of the device wafer with little or no force.

公开(公告)号：US20210057219A1

公开(公告)日：2021-02-25

申请号：US16999223

申请日：2020-08-21

Applicant: Brewer Science, Inc.

Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

IPC: H01L21/033 ,  H01L21/027

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20190194453A1

公开(公告)日：2019-06-27

申请号：US16229591

申请日：2018-12-21

Applicant: Brewer Science, Inc.

Inventor： Xiao Liu ,  Qi Wu ,  Rama Puligadda ,  Dongshun Bai ,  Baron Huang

IPC: C08L71/12 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528

CPC classification number: C08L71/12 ,  C08L2203/20 ,  H01L23/3114 ,  H01L23/528 ,  H01L24/17 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0231 ,  H01L2224/02333 ,  H01L2224/02379

Abstract: Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.

公开(公告)号：US10103048B2

公开(公告)日：2018-10-16

申请号：US14472073

申请日：2014-08-28

Applicant: Brewer Science Inc.

Inventor： Tony D. Flaim ,  Jeremy McCutcheon

IPC: B32B38/10 ,  H01L21/683 ,  B32B37/14 ,  B32B37/30 ,  B32B43/00 ,  B32B37/24

Abstract: A process is disclosed for using two polymeric bonding material layers to bond a device wafer and carrier wafer in a way that allows debonding to occur between the two layers under low-force conditions at room temperature. Optionally, a third layer is included at the interface between the two layers of polymeric bonding material to facilitate the debonding at this interface. This process can potentially improve bond line stability during backside processing of temporarily bonded wafers, simplify the preparation of bonded wafers by eliminating the need for specialized release layers, and reduce wafer cleaning time and chemical consumption after debonding.

公开(公告)号：USRE46841E1

公开(公告)日：2018-05-15

申请号：US15360385

申请日：2016-11-23

Applicant: Brewer Science Inc.

Inventor： Vandana Krishnamurthy ,  Daniel M. Sullivan ,  Yubao Wang ,  Qin Lin ,  Sean Simmons

IPC: G03F7/26 ,  B32B33/00 ,  H01L21/308 ,  G03F7/09 ,  C09D179/08 ,  C08G73/10 ,  B32B9/04 ,  C08G73/00 ,  H01L21/033

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.