Abstract:
Many aspects of an improved IC package are disclosed herein. The improved IC package exhibits low-impedance and high power and signal integrity. The improved IC package comprises an IC die mounted on a multilayer coreless substrate. The thicknesses of prepreg layers of the coreless substrate are specific chosen to minimize warpage and to provide good mechanical performance. Each of the prepreg layers may have different coefficient of thermal expansion (CTE) and/or thickness to enable better control of the coreless substrate mechanical properties. The improved IC package also includes a vertically mounted die side capacitor and a conductive layer formed on the solder resist layer of the substrate. The conductive layer is formed such that it also encapsulates the vertically mounted capacitor while being electrically coupled to one of the capacitor's electrode.
Abstract:
A semiconductor package according to some examples of the disclosure may include a first body layer, a transformer that may comprise one or more inductors, coupled inductors, or inductive elements positioned above the first body layer. A first ground plane is on a top of the first body layer between the first body layer and the inductive element. The first ground plane may have conductive lines generally perpendicular to a magnetic field generated by the inductive element, and a second ground plane on a bottom of the first body layer opposite the first ground plane. The first and second ground planes may also provide heat dissipation elements for the semiconductor as well as reduce or eliminate eddy current and parasitic effects produced by the inductive element.
Abstract:
Embodiments contained in the disclosure provide a method and apparatus for testing an electronic device. An electronic device is installed in a test socket guide. A pusher tip applies a load to the guided coaxial spring probes and forces contact with pads on the device. Test and ground signals are routed through the device and test socket. The apparatus includes a socket having at least one guided coaxial spring probe pin. A socket guide shim is positioned between the receptacle for the electronic device and the socket. A socket guide aids positioning. A pusher tip is placed on the side opposite that of the guided coaxial spring probe pins. The pusher tip mates with a pusher shim and the pusher spring. A top is then placed on the assembly and acts to compress the pusher spring and engage the guided coaxial spring probe pins with the pads on the device.
Abstract:
A substrate that includes a first dielectric layer and a capacitor embedded in the first dielectric layer. The capacitor includes a first terminal, a second terminal, and a third terminal. The second terminal is laterally located between the first terminal and the third terminal. The capacitor also includes a second dielectric layer, a first metal layer and a second metal layer. The first metal layer is coupled to the first and third terminals. The first metal layer, the first terminal, and the third terminal are configured to provide a first electrical path for a first signal. The second metal layer is coupled to the second terminal. The second metal layer and the second terminal are configured to provide a second electrical path for a second signal.
Abstract:
Some implementations provide an integrated device (e.g., semiconductor device) that includes a substrate and an inductor in the substrate. In some implementations, the inductor is a solenoid inductor. The inductor includes a set of windings. The set of windings has an inner perimeter. The set of windings includes a set of interconnects and a set of vias. The set of interconnects and the set of vias are located outside the inner perimeter of the set of windings. In some implementations, the set of windings further includes a set of capture pads. The set of interconnects is coupled to the set of vias through the set of capture pads. In some implementations, the set of windings has an outer perimeter. The set of pads is coupled to the set of interconnects such that the set of pads is at least partially outside the outer perimeter of the set of windings.
Abstract:
A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.
Abstract:
An integrated device package includes a package substrate, a die coupled to the package substrate, an encapsulation layer encapsulating the die, and at least one sheet of electrically conductive material configured to operate as an inductor. The sheet of electrically conductive material is at least partially encapsulated by the encapsulation layer. The sheet of electrically conductive material is configured to operate as a solenoid inductor. The sheet of electrically conductive material includes a first sheet portion, a second sheet portion coupled to the first sheet portion, where the first sheet portion and the second sheet portion form a first winding of the inductor, a first terminal portion coupled to the first sheet portion, and a second terminal portion coupled to the second sheet portion. The first sheet portion is formed on a first level of the sheet. The second sheet portion is formed on a second level of the sheet.
Abstract:
An inductor structure includes a first set of traces corresponding to a first layer of an inductor, a second set of traces corresponding to a second layer of the inductor, and a third set of traces corresponding to a third layer of the inductor that is positioned between the first layer and the second layer. The first set of traces includes a first trace and a second trace that is parallel to the first trace. A dimension of the first trace is different from a corresponding dimension of the second trace. The second set of traces is coupled to the first set of traces. The second set of traces includes a third trace that is coupled to the first trace and to the second trace. The third set of traces is coupled to the first set of traces.
Abstract:
A package on package (PoP) device includes a first package and a second package. The first package includes a first package substrate, a die coupled to the first package substrate, an encapsulation layer located on the first package substrate, and an inter package connection coupled to the first package substrate. The inter package connection is located in the encapsulation layer. The inter package connection includes a first interconnect configured to provide a first electrical path for a reference ground signal, and a second set of interconnects configured to provide at least one second electrical path for at least one second signal. The first interconnect has a length that is at least about twice as long as a width of the first interconnect. The second set of interconnects is configured to at least be partially coupled to the first interconnect by an electric field.
Abstract:
A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.