公开(公告)号：US20170222067A1

公开(公告)日：2017-08-03

申请号：US15490494

申请日：2017-04-18

Applicant: Solexel, Inc.

Inventor： Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: Stable surface passivation on a crystalline silicon substrate is provided by forming a more heavily doped region as a front surface field and/or a doped dielectric layer under a passivation layer on the silicon substrate surface. A passivation layer is deposited on the front surface field and/or doped dielectric layer.

公开(公告)号：US09595622B2

公开(公告)日：2017-03-14

申请号：US14601123

申请日：2015-01-20

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Mehrdad M. Moslehi

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0445

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. Pyramid-like unit cell structures 16 and 50 enable epitaxial growth through an open pyramidal structure 3-D TFSC embodiments 70, 82, 100, and 110 may be combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, and front and back metal contacts allows for simple processing. Other embodiments disclose a selective emitter, selective backside metal contacts, and front-side SiN ARC layers. Several processing methods, including process flows 150, 200, 250, 300, and 350, enable production of these 3-D TFSCs.

Abstract translation: 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 金字塔状晶胞结构16和50能够通过开放的金字塔结构进行外延生长3-D TFSC实施例70,82,100和110可以根据需要组合。 具有基板，发射极，发射极上的氧化物以及前后金属触点的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背面金属触点和前侧SiN ARC层。 包括工艺流程150,200,250,300和350在内的几种加工方法使得能够生产这些3-D TFSC。

公开(公告)号：US20160336473A1

公开(公告)日：2016-11-17

申请号：US14968855

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Benjamin Rattle ,  Heather Deshazer ,  Solene Coutant ,  Swaroop Kommera

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1896 ,  H01L33/0095 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

公开(公告)号：US09214353B2

公开(公告)日：2015-12-15

申请号：US13778047

申请日：2013-02-26

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/268 ,  H01L31/18 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/30 ,  H01L33/00 ,  H01L25/065

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US20150243814A1

公开(公告)日：2015-08-27

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

公开(公告)号：US20150236638A1

公开(公告)日：2015-08-20

申请号：US14428598

申请日：2014-04-14

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H02S20/26 ,  H02S40/34

CPC classification number: H02S20/26 ,  H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S40/30 ,  H02S40/32 ,  H02S40/34 ,  Y02B10/10 ,  Y02E10/58

Abstract: A solar photovoltaic module laminate for electric power generation is provided. The module comprises a plurality of solar cells embedded within the module laminate and electrically interconnected to form at least one string of electrically interconnected solar cells within said module laminate. And at least one remote-access module switch (RAMS) power electronic circuit embedded within the module laminate electrically interconnected to and powered with said at least one string of electrically interconnected solar cells and serving as a remote-controlled module power delivery gate switch.

Abstract translation: 提供了用于发电的太阳能光伏组件层压板。 模块包括嵌入在模块层叠体内的多个太阳能电池，并且电互连以在所述模块层叠体内形成至少一排电互连的太阳能电池。 并且至少一个远程访问模块开关（RAMS）电力电子电路嵌入在所述模块叠层内，电互连到所述至少一个电互连太阳能电池串并由其供电，并用作遥控模块电力输送门开关。

公开(公告)号：US20150221792A1

公开(公告)日：2015-08-06

申请号：US14582177

申请日：2014-12-23

Applicant: Solexel, Inc.

Inventor： Anand Deshpande ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Virendra V. Rana ,  Sean M. Seutter

IPC: H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods for forming self aligned contacts for back contact solar cells are provided.

Abstract translation: 提供了用于形成用于背接触太阳能电池的自对准触头的制造方法。

公开(公告)号：US20150207002A1

公开(公告)日：2015-07-23

申请号：US14475566

申请日：2014-09-02

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Michael Wingert ,  Jay Ashjaee ,  Pawan Kapur ,  Homi Fatemi

IPC: H01L31/0465 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0224

CPC classification number: H01L31/0465 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.

Abstract translation: 太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。

公开(公告)号：US20150200313A1

公开(公告)日：2015-07-16

申请号：US14596213

申请日：2015-01-13

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer

IPC: H01L31/0224 ,  H01L31/0725

CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact solar cells having a discontinuous emitter comprising a plurality of emitter islands are provided. The back contact solar cell comprises a semiconductor layer with a background base doping and having a sunlight-receiving frontside and a backside opposite said sunlight-receiving frontside. An emitter layer having a doping opposite said semiconductor layer background doping is positioned on the semiconductor layer backside. A trench isolation pattern partitions the emitter layer and semiconductor layer into a plurality of discontinuous emitter regions on the semiconductor layer backside. At least one base island region contacting the semiconductor layer is positioned within each of the discontinuous emitter regions on the semiconductor layer backside.

Abstract translation: 提供具有包括多个发射岛的不连续发射体的背接触太阳能电池。 背接触太阳能电池包括具有背景基底掺杂并具有阳光接收的前沿和与阳光接收的前侧相对的背面的半导体层。 具有与所述半导体层背景掺杂相反的掺杂的发射极层位于半导体层背面。 沟槽隔离图案将发射极层和半导体层分隔成半导体层背面上的多个不连续发射极区域。 接触半导体层的至少一个基岛区域位于半导体层背面的每个不连续发射极区域内。

公开(公告)号：US20150171240A1

公开(公告)日：2015-06-18

申请号：US14493341

申请日：2014-09-22

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。