公开(公告)号：US07202564B2

公开(公告)日：2007-04-10

申请号：US10906370

申请日：2005-02-16

申请人： Son Nguyen ,  Sarah L. Lane ,  Jia Lee ,  Kensaku Ida ,  Darryl D. Restaino ,  Takeshi Nogami

发明人： Son Nguyen ,  Sarah L. Lane ,  Jia Lee ,  Kensaku Ida ,  Darryl D. Restaino ,  Takeshi Nogami

IPC分类号： H01L23/48

CPC分类号： H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

摘要翻译： 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3/3 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：US20060183345A1

公开(公告)日：2006-08-17

申请号：US10906370

申请日：2005-02-16

申请人： Son Nguyen ,  Sarah Lane ,  Jia Lee ,  Kensaku Ida ,  Darryl Restaino ,  Takeshi Nogami

发明人： Son Nguyen ,  Sarah Lane ,  Jia Lee ,  Kensaku Ida ,  Darryl Restaino ,  Takeshi Nogami

IPC分类号： H01L21/31

CPC分类号： H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

摘要翻译： 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有包含小于约1.40的CH 3 N 2 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US20050208759A1

公开(公告)日：2005-09-22

申请号：US11126910

申请日：2005-05-11

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

IPC分类号： C23C16/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/505 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

公开(公告)号：US20050131138A1

公开(公告)日：2005-06-16

申请号：US10965044

申请日：2004-10-13

申请人： Eric Connor ,  Dominique Charmot ,  Han Chang ,  Florence Roger ,  Gerrit Klaerner ,  Son Nguyen

发明人： Eric Connor ,  Dominique Charmot ,  Han Chang ,  Florence Roger ,  Gerrit Klaerner ,  Son Nguyen

IPC分类号： A61K20060101 ,  A61K31/13 ,  A61K31/785 ,  C08G2/00 ,  C08K3/00 ,  C08L39/02

CPC分类号： A61K31/785 ,  C08L39/02 ,  C08L2666/02

摘要： Anion-binding polymers are described. The anion-binding polymers in some cases are low swelling anion-binding polymers. In some cases, the anion-binding polymers have a pore volume distribution such that a fraction of the polymer is not available for non-interacting solutes above a certain percentage of the MW of the target ion for the polymer. In some cases, the anion-binding polymers are characterized by low ion-binding interference, where the interference is measured in, for example, a gastrointestinal simulant, relative to non-interfering buffer. Pharmaceutical composition, methods of use, and kits are also described.

公开(公告)号：US20050063921A1

公开(公告)日：2005-03-24

申请号：US10666489

申请日：2003-09-19

申请人： Dominique Charmot ,  Christopher Gibbs ,  Oleg Kolosov ,  Mingjun Liu ,  Son Nguyen ,  Miroslav Petro ,  Steven Rannard

发明人： Dominique Charmot ,  Christopher Gibbs ,  Oleg Kolosov ,  Mingjun Liu ,  Son Nguyen ,  Miroslav Petro ,  Steven Rannard

IPC分类号： A61K8/81 ,  A61K9/68 ,  A61Q11/00 ,  A61K7/16

CPC分类号： A61Q11/00 ,  A61K8/8158

摘要： Oral care composition comprising a polymer obtainable by copolymerising a mixture of comonomers, said mixture comprising: (a) a cationic monomer selected from (ar-vinylbenzyl) trimethylammonium chloride, (dimethylaminopropyl) methacrylamide, [2(methacryloyloxy)ethyl]trimethylammonium chloride, 2-aminoethylmethacrylate hydrochloride and mixtures thereof; and (b) at least one anionic or neutral monomer selected from styrene, mono-2-(methacryloyl)ethyl succinate, vinyl acetate, N, N-dimethylacrylamide, 2-ethylhexylacrylate, vinylphosphonic acid, acrylic acid, 2-acrylamido-2-methyl-1-propanesulfonic acid, N-[tris(hydroxymethyl)methyl] acrylamide, N-vinylpyrrolidone, butyl acrylate, 2-hydroxyethylacrylate, polyethyleneglycol methylethermethacrylate and mixtures thereof, said oral care composition in the form of any one of a toothpaste, gel, foam, chewing gum, deformable strip or mouthwash and which is suitable for use in the oral cavity.

摘要翻译： 所述混合物包含：（a）阳离子单体，选自（芳基乙烯基苄基）三甲基氯化铵，（二甲基氨基丙基）甲基丙烯酰胺，[2（甲基丙烯酰氧基）乙基]三甲基氯化铵，2 甲基丙烯酸氨基乙酯盐酸盐及其混合物; 和（b）至少一种阴离子或中性单体，其选自苯乙烯，琥珀酸单-2-（甲基丙烯酰）乙酯，乙酸乙烯酯，N，N-二甲基丙烯酰胺，丙烯酸2-乙基己酯，乙烯基膦酸，丙烯酸，2-丙烯酰胺基-2- 甲基-1-丙磺酸，N- [三（羟甲基）甲基]丙烯酰胺，N-乙烯基吡咯烷酮，丙烯酸丁酯，丙烯酸2-羟乙酯，聚乙二醇甲基醚甲基丙烯酸酯及其混合物，所述口腔护理组合物为牙膏，凝胶 ，泡沫，口香糖，可变形条或漱口水，适用于口腔。

公开(公告)号：US06378221B1

公开(公告)日：2002-04-30

申请号：US09515113

申请日：2000-02-29

申请人： Carl Roger Ekholm, Jr. ,  Son Nguyen ,  Richard L. Peloquin ,  Robert Gliniecki ,  Todd Baeten ,  Suzanne E. Graumlich ,  Steven Eric Backer

发明人： Carl Roger Ekholm, Jr. ,  Son Nguyen ,  Richard L. Peloquin ,  Robert Gliniecki ,  Todd Baeten ,  Suzanne E. Graumlich ,  Steven Eric Backer

IPC分类号： G01B520

CPC分类号： G01B21/08 ,  A61F2/2415 ,  G01B5/207 ,  G01B5/26 ,  G01B11/245

摘要： A system and method to facilitate thickness measurement of bio-material workpiece, preferably a sheet, and to topographically map the sheet into similar thickness zones for later use. In particular, the system may include a three-axis programmable controller for manipulating a bio-material workpiece with respect to a thickness measurement head. The measurement head may include a plurality of sensors for simultaneous measurement of a plurality of points, with the sensors being adapted to contact the sheet or not. A robust human-machine interface is also provided for process control, preferably including a touch-screen monitor. A marking head may be provided for marking the zones or otherwise indicating the thickness in different areas. Two platens are desirably used in parallel for increased thoughput; the workpiece on one platen may be measured while the other is marked. The system and method are especially suited for assessing and marking pericardial tissue for forming heart valve leaflets. The system may also include logic that analyzes the thickness data and generates a thickness map of the sheet divided into similar thickness zones from which similarly sized leaflets can be cut. A preferred thickness of leaflet may be input with the logic selecting the zones to maximize the available tissue for that size of leaflet.

摘要翻译： 一种促进生物材料工件（优选为片材）的厚度测量的系统和方法，并将该片材地形地映射到相似的厚度区域以备以后使用。 特别地，该系统可以包括用于相对于厚度测量头操纵生物材料工件的三轴可编程控制器。 测量头可以包括用于同时测量多个点的多个传感器，传感器适于接触片材。 还提供用于过程控制的强大的人机界面，优选地包括触摸屏监视器。 可以提供标记头用于标记区域或以其他方式指示不同区域中的厚度。 两个压板最好平行用于增加的通量; 可以测量一个压板上的工件，而另一个被标记。 该系统和方法特别适用于评估和标记用于形成心脏瓣膜小叶的心包组织。 该系统还可以包括分析厚度数据并生成被分成相似厚度区域的片材的厚度图的逻辑，从其可以切割类似大小的传单。 可以用选择区域的逻辑输入传单的优选厚度，以使针对该大小的小叶最大化可用组织。

公开(公告)号：US5622596A

公开(公告)日：1997-04-22

申请号：US435063

申请日：1995-05-08

申请人： Michael D. Armacost ,  David Dobuzinsky ,  Jeffrey Gambino ,  Son Nguyen

发明人： Michael D. Armacost ,  David Dobuzinsky ,  Jeffrey Gambino ,  Son Nguyen

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31

CPC分类号： H01L21/31105 ,  Y10S438/97

摘要： Selectivity of SiO.sub.2 to Si.sub.3 N.sub.4 is increased with the additional of silicon rich nitride conformal layer to manufacturing of semiconductor chip. Silicon rich nitride conformal layer may be used in place of or in addition to standard nitride conformal layers in manufacture.

摘要翻译： SiO 2与Si 3 N 4的选择性随着富硅氮化物附加层的附加而增加，从而制造半导体芯片。 富含氮的氮化物保形层可以代替制造中的标准氮化物保形层来代替标准氮化物保形层。

公开(公告)号：US08454685B2

公开(公告)日：2013-06-04

申请号：US13167549

申请日：2011-06-23

申请人： Ilia Hariton ,  Netanel Benichou ,  Yaacov Nitzan ,  Bella Felsen ,  Diana Nguyen-Thien-Nhon ,  Rajesh Khanna ,  Son Nguyen ,  Tamir Levi ,  Itai Pelled

发明人： Ilia Hariton ,  Netanel Benichou ,  Yaacov Nitzan ,  Bella Felsen ,  Diana Nguyen-Thien-Nhon ,  Rajesh Khanna ,  Son Nguyen ,  Tamir Levi ,  Itai Pelled

IPC分类号： A61F2/24

CPC分类号： A61F2/2418 ,  A61F2/2412 ,  A61F2/2433 ,  A61F2/2475 ,  A61F2/95 ,  A61F2002/9522 ,  A61F2220/0033 ,  A61F2220/005 ,  A61F2220/0075 ,  A61F2230/0054 ,  Y10T29/49863

摘要： An implantable prosthetic valve, according to one embodiment, comprises a frame, a leaflet structure, and a skirt member. The frame can have a plurality of axial struts interconnected by a plurality of circumferential struts. The leaflet structure comprises a plurality of leaflets (e.g., three leaflets arrange to form a tricuspid valve). The leaflet structure has a scalloped lower edge portion secured to the frame. The skirt member can be disposed between the leaflet structure and the frame.

摘要翻译： 根据一个实施例的可植入人造瓣膜包括框架，小叶结构和裙部构件。 框架可以具有由多个圆周支柱互连的多个轴向支柱。 小叶结构包括多个传单（例如，安排形成三尖瓣的三个小叶）。 小叶结构具有固定到框架的扇形下边缘部分。 裙部构件可以设置在小叶结构和框架之间。

公开(公告)号：US20120329287A1

公开(公告)日：2012-12-27

申请号：US13603008

申请日：2012-09-04

申请人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

发明人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

IPC分类号： H01L21/312

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/505 ,  C23C16/511 ,  C23C16/56 ,  H01J2237/336 ,  H01J2237/338 ,  H01J2237/3382 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CHx)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

摘要翻译： 通过在不饱和烃环境中后处理，使四面体应变增加引起的应力变化最小化的多孔SiCOH介电膜。 p-SiCOH电介质膜具有更多的（（CH x））和更少的Si-O-H和Si-H键合部分。 此外，提供稳定的pSiOCH电介质膜，其中至少在孔内的Si-OH（硅烷醇）和Si-H基团的量通过后处理减少约90％以下。 由于气孔包括其中x为1,2或3的稳定的交联 - （CH x） - 链，因此制备柔性的p-SiCOH介电膜。 介电膜是利用包括至少一个C-C双键和/或至少一个C-C三键的气态环境的退火步骤进行的。