公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

公开(公告)号：US5622633A

公开(公告)日：1997-04-22

申请号：US516414

申请日：1995-08-17

申请人： Yoshinori Ohtsuka ,  Yukihiro Takeuchi ,  Tadashi Hattori

发明人： Yoshinori Ohtsuka ,  Yukihiro Takeuchi ,  Tadashi Hattori

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/00 ,  B44C1/22

CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

摘要： An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.

摘要翻译： 公开了一种能够避免特性恶化的MISFET型半导体传感器及其制造方法。 氧化硅膜和氮化硅膜形成在p型硅衬底的上表面上，并且可移动部分以其间插入预定间隔设置在氮化硅膜的上方。 可动栅电极部分存在于可动部分的一部分上并被加速度位移。 在p型硅衬底上形成由杂质扩散层构成的固定电极（源极/漏极部分），并且由于加速而与可动栅电极部分的相对位置的变化导致流动电流变化。 可移动范围限制使用的投影设置在可移动部分以外的可移动栅电极部分的下表面上，并且形成比p型硅基板和可动栅电极部分之间的间隙窄的间隙。

公开(公告)号：US5587343A

公开(公告)日：1996-12-24

申请号：US401044

申请日：1995-03-08

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

IPC分类号： G01L1/18 ,  G01L1/22 ,  G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0828

摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.

摘要翻译： 一种制造半导体传感器的方法，其中公开了可移动部件的偏转。 在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。 此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。 通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。 通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。 进行通过光刻法的干蚀刻等的图案化，形成可动部件。 然后蚀刻可动件下方的氧化硅膜。

公开(公告)号：US07799588B2

公开(公告)日：2010-09-21

申请号：US11783434

申请日：2007-04-10

申请人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

发明人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

IPC分类号： H01L21/00

CPC分类号： G02B3/06 ,  G02B6/124 ,  G03F7/0005

摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

摘要翻译： 一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个 的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。 此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

公开(公告)号：US07601551B2

公开(公告)日：2009-10-13

申请号：US11489670

申请日：2006-07-20

申请人： Yukihiro Takeuchi ,  Junji Oohara

发明人： Yukihiro Takeuchi ,  Junji Oohara

IPC分类号： H01L21/66

CPC分类号： G02B27/0994 ,  G02B6/4206 ,  G02B6/4296

摘要： A method for manufacturing an optical device having an optical block, through which a light is transmitted, is provided. The method includes steps of: forming a plurality of silicon oxide members, which is disposed on a silicon substrate, wherein the silicon oxide members are arranged in parallel each other by a predetermined clearance between two adjacent silicon oxide members; and pouring a super critical fluid into the clearance so that the clearance is filled with a product formed from a predetermined compound for forming the optical block, wherein the predetermined compound is dissolved in the super critical fluid.

摘要翻译： 提供了具有光传输光学块的光学装置的制造方法。 该方法包括以下步骤：形成多个氧化硅构件，其设置在硅衬底上，其中所述氧化硅构件在两个相邻的氧化硅构件之间以预定间隙彼此平行地布置; 并将超临界流体倒入间隙中，以便用由用于形成光学块的预定化合物形成的产品填充间隙，其中预定化合物溶解在超临界流体中。

公开(公告)号：US20070069318A1

公开(公告)日：2007-03-29

申请号：US11505386

申请日：2006-08-17

申请人： Yukihiro Takeuchi ,  Junji Oohara

发明人： Yukihiro Takeuchi ,  Junji Oohara

IPC分类号： H01L31/0232

CPC分类号： B81C1/00126 ,  B81B2201/047 ,  G01D5/285 ,  G02B26/0816

摘要： A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.

摘要翻译： 提供一种用于制造具有可移动部分，支撑部分和光学部件的物理量传感器的方法。 该方法包括以下步骤：蚀刻硅衬底，使得可移动部分成形部分，待形成部分，以及具有待形成部分的光学部件，其具有 形成多个列和沟槽; 氧化形成光学部件的部分，使得每个列改变为氧化硅柱，并且沟槽填充有氧化硅层; 以及去除连接到硅衬底的可移动部分成形部分的一部分，使得可移动部分与硅衬底分离。

公开(公告)号：US20060213268A1

公开(公告)日：2006-09-28

申请号：US11384330

申请日：2006-03-21

申请人： Kazushi Asami ,  Yukihiro Takeuchi ,  Kenichi Yokoyama

发明人： Kazushi Asami ,  Yukihiro Takeuchi ,  Kenichi Yokoyama

IPC分类号： G01P15/00

CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0831

摘要： An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

摘要翻译： 加速度传感器包括：包括沿第一方向堆叠的支撑层和半导体层的半导体衬底; 可动电极和固定电极; 和沟槽。 可移动电极通过与第二方向一起夹住沟槽而分开面对固定电极。 沟槽在第二方向上具有检测距离。 当施加加速度时，可移动电极与第一方向一起可移动。 可动电极具有与支撑层分离的底部。 可动电极与第二方向的宽度小于固定电极的宽度。 可移动电极与第一方向的厚度小于固定电极的厚度。

公开(公告)号：US20050265662A1

公开(公告)日：2005-12-01

申请号：US11139540

申请日：2005-05-31

申请人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

发明人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

IPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B27/00 ,  H01L21/311

CPC分类号： G02B6/136 ,  G02B6/122 ,  G02B6/4207

摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.

摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。

公开(公告)号：US20050182574A1

公开(公告)日：2005-08-18

申请号：US11055382

申请日：2005-02-09

申请人： Yukihiro Sano ,  Yukihiro Takeuchi ,  Yositugu Abe

发明人： Yukihiro Sano ,  Yukihiro Takeuchi ,  Yositugu Abe

IPC分类号： G01N27/00 ,  G01N27/04 ,  G01N33/00 ,  G06F19/00

CPC分类号： G01N33/005

摘要： A method of detecting hydrogen concentration, while maintaining high precision, is provided. The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising a step (S3) of calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, a step (S5) of calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a step (S7) of calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity and the correction amount.

摘要翻译： 提供了一种在保持高精度的同时检测氢浓度的方法。 通过使用其第一电生理量根据氢浓度而变化的第一发热电阻器和与气体流动方向相邻的所述第一发热电阻器的第二发热电阻器来检测氢浓度的方法，以及 其中第二电物量根据第一电化学数量的氢浓度而变化，以基于第一电物量和第二电物量检测氢的浓度，该方法包括计算量的步骤（S 3） 作为第一电物量或第二电物量的目标物理量的变化，基于第一电物量与第二电物量之间的差计算校正量的步骤（S 5），以及步骤 （S 7）基于差异计算氢的浓度 目标物理量的变化量与校正量之间的差异。

公开(公告)号：US06909158B2

公开(公告)日：2005-06-21

申请号：US10703460

申请日：2003-11-10

申请人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

发明人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

IPC分类号： G01P15/125 ,  H01L29/84 ,  H01L27/00

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.

摘要翻译： 电容型动力传感器包括半导体衬底，根据动力位移的重量部分，与重量部分一体化的可动电极和面对可动电极的固定电极。 可动电极和固定电极提供具有电容的电容器。 可移动电极可根据动态量移动。 电容器的电容根据可动电极的位移而变化，从而以外部电路测量作为电容变化的动力学量。 面对固定电极的可动电极的面对面具有大致矩形形状，并且面对面的纵横比在0.1和10之间的范围内。