Abstract:
Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.
Abstract:
The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.
Abstract:
Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.
Abstract:
A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.
Abstract:
The invention relates to a charged particle beam generator. The generator may comprise a high voltage shielding arrangement (201) for shielding components outside the shielding arrangement from high voltages within the shielding arrangement, and a vacuum pump (220) located outside the shielding arrangement for regulating a pressure of a space within the shielding arrangement. The generator may comprise a collimator system with a cooling arrangement (405a/407a-407b/405b) comprising cooling channels inside electrodes of the collimator system.
Abstract:
To realize a focused-ion-beam machining apparatus capable of machining a thin sample with a wide area and a uniform film thickness and a needle-like sample with a sharp tip, in a focused-ion-beam machining apparatus including: an ion source (1); an electronic lens (3) focusing an ion beam extracted from the ion source (1) and irradiating the ion beam to a sample (5); and a sample holder (13) holding the sample (5), the sample holder (13) is provided with a shield electrode (7) arranged in a manner such as to cover the sample (5), and the sample (5) and the shield electrode (7) are insulated from each other in a manner such that voltages can be applied to them separately from each other.
Abstract:
The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.
Abstract:
The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.
Abstract:
The invention relates to a modulation device for use in a charged particle multi-beamlet lithography system. The device includes a body comprising an interconnect structure provided with a plurality of modulators and interconnects at different levels within the interconnect structure for enabling connection of the modulators to one or more pattern data receiving elements. A modulator includes a first electrode, a second electrode, and an aperture extending through the body. The electrodes are located on opposing sides of the aperture for generating an electric field across the aperture. At least one of the first electrode and the second electrode includes a first conductive element formed at a first level of the interconnect structure and a second conductive element formed at a second level of the interconnect structure. The first and second conductive elements are electrically connected with each other.
Abstract:
The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.