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    SPUTTERING APPARATUS
    42.
    发明申请
    SPUTTERING APPARATUS 有权
    溅射装置

    公开(公告)号：US20140246310A1

    公开(公告)日：2014-09-04

    申请号：US14019877

    申请日：2013-09-06

    Applicant: Sputtering Components, Inc.

    Inventor： Daniel Theodore Crowley ,  Patrick Lawrence Morse ,  John Robert German

    IPC: C23C14/35

    CPC classification number: H01J37/3455 ,  H01J37/345 ,  H01J37/347 ,  H01J37/3476 ,  H01J37/3479

    Abstract: A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.

    Abstract translation: 用于旋转目标阴极的磁控管组件包括刚性支撑结构，可移动地附接到刚性支撑结构的磁棒结构，以及耦合到刚性支撑结构并被配置为改变磁棒结构与其之间的距离的至少一个致动机构 可旋转目标气缸的表面。 磁控管组件还包括位置指示机构，其可操作以测量磁棒结构相对于可旋转目标气缸的表面的位置。 通信设备被配置为从磁控管组件的外部接收命令信号，并将信息信号发送到磁控管组件的外部。

    Recycling Method for Tantalum Coil for Sputtering and Tantalum Coil Obtained by the Recycling Method
    43.
    发明申请
    Recycling Method for Tantalum Coil for Sputtering and Tantalum Coil Obtained by the Recycling Method 有权
    用回收方法获得的溅射和钽线圈的钽线圈回收方法

    公开(公告)号：US20140174917A1

    公开(公告)日：2014-06-26

    申请号：US14234699

    申请日：2012-09-14

    Applicant: Shiro Tsukamoto

    Inventor： Shiro Tsukamoto

    IPC: H01J37/34

    CPC classification number: H01J37/3476 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/3288 ,  H01J37/34 ,  H01J37/3447 ,  Y10T29/49748

    Abstract: The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.

    Abstract translation: 本发明涉及设置在基板和溅射靶之间的用于再循环用于溅射的钽线圈的方法。 用于再循环用于溅射的钽线圈的方法的特征在于，废钽线圈的整个或部分表面被切割（进行切割直到重新淀积的膜和滚花痕迹被消除），以便消除重新 在溅射期间形成的沉积膜，并且对切割部分新进行滚花。 当在溅射期间溅射的晶粒在设置在衬底和溅射靶之间的钽线圈的表面上积累（重新沉积）时，通过在溅射完成之后通过切割消除积聚在废线圈上的溅射晶粒，钽 线圈可以有效回收。 因此，提供了能够精密制造新线圈的技术，提高生产率并稳定地提供这种线圈。

    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES
    44.
    发明申请
    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES 有权
    电光设备中的缺陷减缓层

    公开(公告)号：US20140022621A1

    公开(公告)日：2014-01-23

    申请号：US13763505

    申请日：2013-02-08

    Applicant: VIEW, INC.

    Inventor： Sridhar K. KAILASAM ,  Robin FRIEDMAN ,  Dane GILLASPIE ,  Anshu A. PRADHAN ,  Robert ROZBICKI ,  Disha MEHTANI

    IPC: G02F1/155

    CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层，防止电子传导层和/或电致变色层接触相反极性的层，并在缺陷形成的区域中产生短路。 在一些实施例中，提供封装层以封装颗粒并防止它们从器件堆叠中排出，并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中，绝缘层含有一种或多种以下金属氧化物：氧化铝，氧化锌，氧化锡，氧化硅铝，氧化铈，氧化钨，氧化镍氧化物和氧化铟锡氧化物。 也可以使用硬质合金，氮化物，氧氮化物和碳氧化物。

    COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE
    45.
    发明申请
    COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE 有权
    用于沉积石墨的铜基材

    公开(公告)号：US20130316167A1

    公开(公告)日：2013-11-28

    申请号：US13817533

    申请日：2012-05-25

    Applicant: Thomas A. Yager ,  Joshua Robinson

    Inventor： Thomas A. Yager ,  Joshua Robinson

    IPC: C23C16/26

    CPC classification number: C01B31/0453 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C14/545 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

    Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

    Abstract translation: 介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。 表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。 高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。 与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多 使用高纯度铜箔衬底的沉积方法。

    High deposition rate sputtering
    47.
    发明授权
    High deposition rate sputtering 有权
    高沉积速率溅射

    公开(公告)号：US07811421B2

    公开(公告)日：2010-10-12

    申请号：US11183463

    申请日：2005-07-18

    Applicant: Roman Chistyakov

    Inventor： Roman Chistyakov

    IPC: C23C14/35

    CPC classification number: C23C14/354 ,  C23C14/228 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/3266 ,  H01J37/32697 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3455 ,  H01J37/3467 ,  H01J37/3476 ,  H01L21/02266

    Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

    Abstract translation: 描述了用于高沉积溅射的方法和装置。 溅射源包括邻近阳极定位的阳极和阴极组件。 阴极组件包括溅射靶。 电离源产生靠近阳极和阴极组件的弱离子化等离子体。 电源在阳极和阴极组件之间产生电场，从而产生来自弱离子化等离子体的强电离等离子体。 强电离等离子体包括冲击溅射靶的第一多个离子，以在溅射靶中产生足够的热能，使得溅射靶的溅射产率与溅射靶的温度非线性相关。

    SPUTTERING SYSTEM AND METHOD INCLUDING AN ARC DETECTION
    48.
    发明申请
    SPUTTERING SYSTEM AND METHOD INCLUDING AN ARC DETECTION 有权
    溅射系统和包括电弧检测的方法

    公开(公告)号：US20100012482A1

    公开(公告)日：2010-01-21

    申请号：US12174893

    申请日：2008-07-17

    Applicant: Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

    Inventor： Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

    IPC: C23C14/54

    CPC classification number: H01J37/3476 ,  C23C14/54 ,  H01J37/32027 ,  H01J37/32055 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/34 ,  H01J37/3444 ,  H01J2237/0206

    Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

    Abstract translation: 一种溅射系统，其包括具有用作阴极的靶材料的溅射室，以及阳极和工件。 直流（DC）电源为阳极和阴极提供足以在溅射室内产生等离子体的电力。 检测模块通过监视等离子体的电特性来检测溅射室中的电弧的发生。 在一个实施例中，所监测的电特性是等离子体的阻抗。 在另一实施例中，电特性是等离子体的电导。

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