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    THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER
    41.
    发明申请
    THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER 有权
    硅单晶水热氧化膜成型方法

    公开(公告)号：US20130178071A1

    公开(公告)日：2013-07-11

    申请号：US13824028

    申请日：2011-10-06

    申请人： Hiroyuki Takahashi ,  Kazuhiko Yoshida

    发明人： Hiroyuki Takahashi ,  Kazuhiko Yoshida

    IPC分类号： H01L21/316

    CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255

    摘要： Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

    摘要翻译： 公开了在硅单晶晶片上形成热氧化膜的方法，其包括将硅单晶片投掷到热处理炉中; 将热处理炉的升温至达到形成热氧化膜的温度T1，形成厚度为d1的热氧化膜; 随后将热处理炉的温度降低到低于温度T1的温度; 然后将热处理炉的温度升高到高于温度T1的温度T2，以另外形成厚度d2厚于厚度d1的热氧化膜。 因此，提供了一种热氧化膜形成方法，以在形成热氧化膜期间抑制硅单晶片的滑移位错和/或裂纹的发生。

    Capping layer for reduced outgassing
    42.
    发明授权
    Capping layer for reduced outgassing 失效
    封盖层减少排气

    公开(公告)号：US08466073B2

    公开(公告)日：2013-06-18

    申请号：US13448624

    申请日：2012-04-17

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/316

    CPC分类号： H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

    摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

    摘要翻译： 描述形成氧化硅层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

    METHOD FOR CLEANING & PASSIVATING GALLIUM ARSENIDE SURFACE AUTOLOGOUS OXIDE AND DEPOSITING AL2O3 DIELECTRIC
    43.
    发明申请
    METHOD FOR CLEANING & PASSIVATING GALLIUM ARSENIDE SURFACE AUTOLOGOUS OXIDE AND DEPOSITING AL2O3 DIELECTRIC 有权
    用于清洁和钝化铝酸盐表面氧化物和沉积Al2O3电介质的方法

    公开(公告)号：US20130078819A1

    公开(公告)日：2013-03-28

    申请号：US13528509

    申请日：2012-06-20

    申请人： Qingqing Sun ,  Runchen Fang ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

    发明人： Qingqing Sun ,  Runchen Fang ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

    IPC分类号： H01L21/316

    CPC分类号： H01L21/0228 ,  H01L21/02052 ,  H01L21/02178 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306

    摘要： The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning & passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al2O3 dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al2O3 ALD with the GaAs surface, and then deposit high-quality Al2O3 dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.

    摘要翻译： 本发明属于半导体材料的技术领域，具体涉及一种清洗和钝化砷化镓（GaAs）表面自氧化物并沉积Al2O3电介质的方法。 该方法包括：使用新型硫钝化剂与GaAs表面的自氧化物反应，对其进行清洗，并产生钝化的硫化物膜，使GaAs与外界环境分离，从而防止GaAs再次氧化; 通过Al2O3 ALD的反应物三甲基铝（TMA）与GaAs表面的预处理反应，进一步清洗GaAs表面上的残余物，如自生氧化物和硫化物，然后通过ALD作为栅极电介质沉积高质量的Al2O3电介质 其将GaAs与外部环境完全分离。 本发明具有简单的工艺和良好的效果，并且可以为制造GaAs器件提供前提条件。

    CAPPING LAYER FOR REDUCED OUTGASSING
    45.
    发明申请
    CAPPING LAYER FOR REDUCED OUTGASSING 失效
    吸收层用于减少排气

    公开(公告)号：US20120309205A1

    公开(公告)日：2012-12-06

    申请号：US13448624

    申请日：2012-04-17

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/316

    CPC分类号： H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

    摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

    摘要翻译： 描述形成氧化硅层的方法。 该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未加注射的无碳硅前体组合形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

    Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor
    49.
    发明授权
    Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor 失效
    使用双（二乙基氨基）硅烷（C 8 H 22 N 2 Si）作为硅前体的减少图案负载

    公开(公告)号：US08236708B2

    公开(公告)日：2012-08-07

    申请号：US12855877

    申请日：2010-08-13

    申请人： Sasha Kweskin ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kedar Sapre

    发明人： Sasha Kweskin ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kedar Sapre

    IPC分类号： H01L21/316 ,  C23C16/40

    CPC分类号： H01L21/02219 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02271

    摘要： Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

    摘要翻译： 本公开的方面涉及在图案化衬底上沉积电介质层的方法。 在实施方案中，通过将BIS（二乙胺）硅烷（BDEAS），臭氧和分子氧流入处理室来沉积电介质层，使得跨越图案化的衬底表面实现相对均匀的电介质生长速率。 根据实施例生长的电介质层的沉积可以减少对图案密度的依赖性，同时仍然适用于非牺牲应用。