摘要:
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要:
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要:
The semiconductor integrated circuit of the present invention includes an electrode to which potential is supplied to apply an electric field to an isolation layer between similar semiconductor layers having ohmic electrodes and implanted into a compound semiconductor substrate. By this construction this invention reduces the development of temporary conduction in the isolation layer due to disturbance of potential barrier by .alpha. particles, and can improve pronouncedly the tolerance to .alpha. particle induced soft errors.
摘要:
A semiconductor integrated circuit memory is disclosed in which a first impurity-doped layer for making circuit elements such as MESFET's and a second impurity-doped layer opposite in conductivity type to the first impurity-doped layer are formed in a semi-insulating substrate in such a manner that the second impurity-doped layer is formed under and between circuit elements for making up a memory cell array part and a peripheral circuit part, and is divided into at least first and second regions. For example, the first region formed under and between the circuit elements of the memory cell array part is made of a P-type layer which is high in carrier density, and the second region formed under and between the circuit elements of the peripheral circuit part is made of a P-type layer which is low in carrier density. The high carrier-density P-type layer formed under the memory cell array part allows a memory cell having a minimum critical charge for alpha-particles to gain satisfactory alpha-particle immunity even when the memory cell is made fine in size. Further, the low carrier-density P-type layer formed under the peripheral circuit part having a critical charge larger than that of the memory cell can improve the alpha-particle immunity of the peripheral circuit part and can suppress an increase in parasitic capacitance at the peripheral circuit part to maintain the high-speed operation of the memory.
摘要:
A differential transmission circuit includes a grounded conductive layer, a pair of transmission line conductors, a conductive film and a via hole which connects the grounded conductive layer to the conductive film. The differential transmission circuit further includes a straight-line region which is present in the differential transmission circuit through which a differential transmission signal output by a driving circuit is transmitted and in which the pair of transmission line conductors extends parallel so as to have a first width, and a band rejection filter region in which the pair of transmission line conductors planarly overlaps the conductive film and extends parallel so as to have a second width narrower than the first width and a common mode of the differential transmission signal is attenuated at one of the frequencies which are natural number multiples of a frequency corresponding to the predetermined bit rate.
摘要:
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要:
A differential transmission circuit includes a pair of transmission line conductors and a ground conductor layer, wherein the pair of transmission line conductors include a first straight line region where both the pair of transmission line conductors extend in parallel to each other in a first direction with a first width in a first layer, a first cross region where one of the pair of transmission line conductors is formed in the first layer, the other thereof is formed in a second layer, and the pair of transmission line conductors cross the each other in a three-dimensional manner, the first cross region being disposed on the front side of the first straight line region, and wherein each of the widths of the pair of transmission line conductors in the first cross region is smaller than the first width.
摘要:
Provided are an optical transmitter device and an optical transmitter module which are capable of reducing the optical transmitter module size while maintaining a state where an excellent optical transmission waveform quality is obtained over a wide range of frequencies. The optical transmission module (2) includes a semiconductor laser diode device (10), an optical modulator device (12), and a first termination resistor circuit (14-1). A printed circuit board (4) includes a driver IC (16) and a second termination resistor circuit (14-2). A lower cutoff frequency of the first termination resistor circuit (14-1) and an upper cutoff frequency of the second termination resistor circuit (14-2) correspond to each other. An impedance of the first termination resistor circuit (14-1) in a pass frequency band thereof and an impedance of the second termination resistor circuit (14-2) in a pass frequency band thereof correspond to each other.
摘要:
To reduce emission of an unintentional electromagnetic wave even if a frequency of a clock signal being output is high, a printed circuit board (10) includes: a substrate (101); signal output circuits (102 and 103) formed on the substrate (101), for outputting a clock signal; power supply wirings (109 and 110) for connecting the signal output circuits (102 and 103) and a power source; and trap filters (107 and 108) provided to the power supply wirings (109 and 110), for attenuating a frequency component corresponding to a frequency of the clock signal.
摘要:
Provided is a metal casing structure capable of avoiding a cavity resonance at 10 GHz and 20 GHz by controlling an eigenmode frequency in an inner space of a casing without involving an increase in cost, and a 10 Gbit/s optical transceiver module which achieves reduction in unnecessary electromagnetic waves and cost. In the optical transceiver module, a metal casing having a cavity therein is formed by an upper casing (100) and a lower casing (101), a metal partition wall (103, 104) is provided on at least one of the upper casing (100) and the lower casing (101) near a central portion of the casing in a direction parallel to a direction connecting a front and a rear thereof, and a length of a gap between the partition wall (103, 104) and a printed circuit board (102) is adjusted.