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    Electroless copper plating solution, electroless copper plating process and production process of circuit board
    52.
    发明申请
    Electroless copper plating solution, electroless copper plating process and production process of circuit board 审中-公开
    化学镀铜液，化学镀铜工艺及电路板生产工艺

    公开(公告)号：US20070079727A1

    公开(公告)日：2007-04-12

    申请号：US11634071

    申请日：2006-12-06

    申请人： Takeyuki Itabashi ,  Hiroshi Kanemoto ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

    发明人： Takeyuki Itabashi ,  Hiroshi Kanemoto ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

    IPC分类号： C23C18/40 ,  B05D1/40

    CPC分类号： C23C18/1803 ,  C23C18/1653 ,  C23C18/40

    摘要： This invention provides an electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein said reducing agent for copper ion is glyoxylic acid or a salt thereof, said pH adjusting agent is potassium hydroxide and said electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

    摘要翻译： 本发明提供一种使用乙醛酸作为还原剂的化学镀铜溶液，其在坎尼扎罗反应的反应量较小时，不会通过电镀反应和坎尼扎罗反应在很大程度上导致积存在化学镀铜溶液中的盐沉淀， 并可长期稳定使用。 所述无电镀铜溶液包括铜离子，铜离子络合剂，铜离子还原剂和pH调节剂，其中所述铜离子还原剂是乙醛酸或其盐，所述pH调节剂是氢氧化钾 所述化学镀铜溶液含有选自硅酸，偏硅酸盐，二氧化锗，锗酸盐，磷酸，磷酸盐，钒酸，钒酸盐，锡酸和锡酸盐中的至少一种， 为0.0001mol / L以上。

    Electroless plating method, electroless plating device, and production method and production device of semiconductor device
    55.
    发明申请
    Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开
    化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置

    公开(公告)号：US20060102485A1

    公开(公告)日：2006-05-18

    申请号：US11329093

    申请日：2006-01-11

    申请人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    发明人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    IPC分类号： C25D5/00

    CPC分类号： C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.

    摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。

    Electroless copper plating machine, and multi-layer printed wiring board
    58.
    发明授权
    Electroless copper plating machine, and multi-layer printed wiring board 失效
    无电镀铜机，多层印刷线路板

    公开(公告)号：US06900394B1

    公开(公告)日：2005-05-31

    申请号：US09678800

    申请日：2000-10-04

    申请人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

    发明人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

    IPC分类号： H05K3/46 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40 ,  H05K3/18 ,  H01R12/04 ,  H05K1/11

    CPC分类号： C23C18/1617 ,  C23C18/40 ,  H05K3/187

    摘要： A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

    摘要翻译： 提供了一种从电化学镀铜溶液中去除铜离子还原剂的铜离子和氧化剂离子的电镀阻挡离子（例如阴离子）的方法，并且在镀覆期间在化学镀铜溶液中保持恒定的盐浓度。 无电镀铜方法使用含有硫酸铜作为铜离子源的镀液，铜离子源铜离子络合剂，作为铜离子还原剂的乙醛酸和pH调节剂。 该方法的特征在于在所述化学镀铜溶液中析出和除去硫酸和草酸离子，并且在镀覆期间保持所述无电镀铜溶液中的硫酸和草酸离子中的至少一种的最佳浓度。

    Electric copper plating liquid and process for manufacturing semiconductor integrated circuit device using same
    59.
    发明申请
    Electric copper plating liquid and process for manufacturing semiconductor integrated circuit device using same 审中-公开
    电镀铜液和制造半导体集成电路器件的工艺

    公开(公告)号：US20050087447A1

    公开(公告)日：2005-04-28

    申请号：US10996382

    申请日：2004-11-26

    申请人： Toshio Haba ,  Takeyuki Itabashi ,  Haruo Akahoshi ,  Shinichi Fukada

    发明人： Toshio Haba ,  Takeyuki Itabashi ,  Haruo Akahoshi ,  Shinichi Fukada

    IPC分类号： C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/522 ,  H05K3/42

    CPC分类号： C25D7/123 ,  C25D3/38 ,  H05K3/423

    摘要： An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.

    摘要翻译： 本发明的目的是通过在具有高纵横比的特征内部填充铜来提高半导体集成电路器件的可靠性和生产成本，以形成由连接的多个互连层组成的多层互连 彼此之间和适合于此的铜电镀浴。 在本发明中，当特征填充有铜时，使用带有花青染料的铜电镀浴，例如，吲哚鎓化合物，可使铜镀层优先从特征的底部进行。

    Electroless plating method, electroless plating device, and production method and production device of semiconductor device
    60.
    发明申请
    Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开
    化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置

    公开(公告)号：US20050022745A1

    公开(公告)日：2005-02-03

    申请号：US10898201

    申请日：2004-07-26

    申请人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    发明人： Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    IPC分类号： C23C18/16 ,  B05D1/18 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

    CPC分类号： C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.

    摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。