公开(公告)号：US20200009368A1

公开(公告)日：2020-01-09

申请号：US16573533

申请日：2019-09-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Steven J. Holmes ,  Qinghuang Lin ,  Emily R. Kinser ,  Nathan P. Marchack ,  Roy R. Yu

IPC: A61N1/04 ,  A61K38/18 ,  A61B5/00 ,  B82Y15/00

Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.

公开(公告)号：US10388857B2

公开(公告)日：2019-08-20

申请号：US15184109

申请日：2016-06-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  G03F7/20 ,  H01L27/22

Abstract: A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

公开(公告)号：US20180340204A1

公开(公告)日：2018-11-29

申请号：US15810356

申请日：2017-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Steven J. Holmes ,  Emily R. Kinser ,  Qinghuang Lin ,  Nathan P. Marchack ,  Roy R. Yu

IPC: C12Q1/00 ,  C12Q1/26 ,  G01N27/327

Abstract: A biosensor includes an array of electrically conductive nanorods formed on a substrate. The nanorods each includes a nanoscale porous coating formed on a surface of the nanorods from silicon dioxide layers. An enzyme coating is bound to the porous coating.

公开(公告)号：US20180340203A1

公开(公告)日：2018-11-29

申请号：US15602332

申请日：2017-05-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Steven J. Holmes ,  Emily R. Kinser ,  Qinghuang Lin ,  Nathan P. Marchack ,  Roy R. Yu

IPC: C12Q1/00 ,  C12Q1/26 ,  G01N27/327

Abstract: A biosensor includes an array of electrically conductive nanorods formed on a substrate. The nanorods each includes a nanoscale porous coating formed on a surface of the nanorods from silicon dioxide layers. An enzyme coating is bound to the porous coating.

公开(公告)号：US09647200B1

公开(公告)日：2017-05-09

申请号：US14961243

申请日：2015-12-07

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Chandrasekharan Kothandaraman ,  Qinghuang Lin

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.

公开(公告)号：US20170062708A1

公开(公告)日：2017-03-02

申请号：US14840176

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Abstract translation: 用于形成存储器件的方法包括使用掩模版和具有与光刻胶的极性相反的极性的显影剂掩蔽光致抗蚀剂材料以提供光致抗蚀剂材料岛。 蚀刻平坦化层以建立由光致抗蚀剂材料岛限定的平坦化材料的支柱。 蚀刻金属层以形成直径与平坦化材料的柱大致相同的金属柱。 蚀刻存储器堆叠以形成具有与金属柱大致相同直径的存储堆栈柱。 磁阻存储单元包括具有圆形横截面的磁隧道连接柱。 该柱具有钉扎磁性层，隧道势垒层和自由磁性层。 第一导电触点设置在磁隧道结柱的上方。 第二导电触点设置在磁隧道结柱的下方。

公开(公告)号：US20160199833A1

公开(公告)日：2016-07-14

申请号：US15074701

申请日：2016-03-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qinghuang Lin ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: B01L3/00

CPC classification number: G01N33/48721 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/502761 ,  B01L2200/0663 ,  B01L2200/12 ,  B01L2300/042 ,  B01L2300/0645 ,  B01L2300/0887 ,  B01L2300/0896 ,  B01L2300/161 ,  B01L2400/0415 ,  B01L2400/0421 ,  G01N27/447 ,  G01N27/44791 ,  Y10T29/49002

Abstract: A device for passing a biopolymer molecule includes a nanochannel formed between a surface relief structure, a patterned layer forming sidewalls of the nanochannel and a sealing layer formed over the patterned layer to encapsulate the nanochannel. The surface relief structure includes a three-dimensionally rounded surface that reduces a channel dimension of the nanochannel at a portion of nanochannel and gradually increases the dimension along the nanochannel toward an opening position, which is configured to receive a biopolymer.

公开(公告)号：US09006373B2

公开(公告)日：2015-04-14

申请号：US13742490

申请日：2013-01-16

Applicant: International Business Machines Corporation

Inventor： Phillip J. Brock ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Jitendra S. Rathore ,  Ratnam Sooriyakumaran

IPC: C08G77/14 ,  H01L23/532 ,  C07F7/21 ,  C08L83/14 ,  G03F7/075 ,  G03F7/40 ,  H01L21/02 ,  H01L21/31 ,  H01L21/768 ,  C08G77/50 ,  G03F7/004

CPC classification number: H01L23/5329 ,  C07F7/21 ,  C08G77/50 ,  C08L83/14 ,  G03F7/0045 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1031 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

Abstract translation: 固化到多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物，在负色调可光图案化电介质配方中固化成多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物，使用含有倍半硅氧烷聚合物的负色调可光图案化介电制剂形成结构的方法，其固化成多孔倍半硅氧烷聚合物， 多孔倍半硅氧烷聚合物和单体以及制备用于聚合多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物的单体的方法。

公开(公告)号：US08952539B2

公开(公告)日：2015-02-10

申请号：US14157098

申请日：2014-01-16

Applicant: International Business Machines Corporation

Inventor： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC: H01L23/538 ,  H01L23/482 ,  H01L21/02 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08L83/04

CPC classification number: H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

Abstract translation: 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20140131880A1

公开(公告)日：2014-05-15

申请号：US14157098

申请日：2014-01-16

Applicant: International Business Machines Corporation

Inventor： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC: H01L23/482

CPC classification number: H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

Abstract translation: 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。