公开(公告)号：US20130183225A1

公开(公告)日：2013-07-18

申请号：US13744854

申请日：2013-01-18

Applicant: The Regents of the University of California

Inventor： Paul Von Dollen ,  James S. Speck ,  Siddha Pimputkar

IPC: C30B30/02 ,  C30B9/00 ,  C30B29/40

CPC classification number: C30B30/02 ,  C30B9/00 ,  C30B29/403

Abstract: A method and apparatus for bulk crystal growth using non-thermal atmospheric pressure plasmas. This method and apparatus pertains to growth of any compound crystal involving one or more crystal components in a liquid phase (also known as the melt or solution), in communication with a non-thermal atmospheric pressure plasma source comprised of one or more other crystal components.

Abstract translation: 使用非热大气压等离子体的体晶生长的方法和装置。 该方法和装置涉及包含一种或多种在液相（也称为熔体或溶液）中的一种或多种晶体组分的化合物晶体与包含一种或多种其它晶体组分的非热大气压等离子体源的连通 。

公开(公告)号：US20130099277A1

公开(公告)日：2013-04-25

申请号：US13660782

申请日：2012-10-25

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Evelyn L. Hu ,  Claude C.A. Weisbuch ,  Yong Seok Choi ,  Gregor Koblmuller ,  Michael Iza ,  Christophe Hurni

IPC: H01L33/02 ,  H01L21/306 ,  H01L29/20

CPC classification number: H01L21/30621 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.

Abstract translation: 通过将蚀刻停止层结合到结构中以及受控的高选择性蚀刻工艺，选择性地干蚀刻N面（Al，In，Ga）N异质结构的方法。 具体地说，该方法包括：（1）在器件结构的生长中结合容易形成的兼容的蚀刻停止层，（2）使用激光剥离或类似工艺来将活性层与 原始生长衬底，和（3）在N面（Al，In，Ga）N上实现高于14：1的蚀刻选择性。

公开(公告)号：US20130099180A1

公开(公告)日：2013-04-25

申请号：US13659389

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Paul M. von Dollen ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  Y10T117/1096

Abstract: Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

Abstract translation: 使用碱土金属来减少掺入使用氨热法生长的III族氮化物晶体中的杂质。

公开(公告)号：US20230268462A1

公开(公告)日：2023-08-24

申请号：US18014541

申请日：2021-07-09

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/0753 ,  H01L33/007

Abstract: A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.

公开(公告)号：US11164997B2

公开(公告)日：2021-11-02

申请号：US16320924

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01S5/343

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

公开(公告)号：US20180152004A1

公开(公告)日：2018-05-31

申请号：US15880999

申请日：2018-01-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/343 ,  H01L31/036

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：US20180013035A1

公开(公告)日：2018-01-11

申请号：US15698181

申请日：2017-09-07

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/00 ,  H01S5/343 ,  H01L21/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

公开(公告)号：US09793435B2

公开(公告)日：2017-10-17

申请号：US14953858

申请日：2015-11-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  H01L33/00 ,  B82Y20/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01S5/343 ,  H01L33/02 ,  H01L21/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

公开(公告)号：US20160156155A1

公开(公告)日：2016-06-02

申请号：US14820258

申请日：2015-08-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/183 ,  H01S5/065 ,  H01S5/10

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US09356431B2

公开(公告)日：2016-05-31

申请号：US14766924

申请日：2014-02-13

Applicant: The Regents of the University of California

Inventor： Arash Pourhashemi ,  Robert M. Farrell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/30 ,  H01S5/40 ,  H01S5/02

CPC classification number: H01S5/34333 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/4025 ,  H01S2304/12

Abstract: A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract translation: 输出功率超过1W，斜率效率大于1W / A，外部量子效率（EQE）超过25％的高功率蓝紫色III族氮化物半极性激光二极管（LD），以及 更优选超过35％。 这些工作特性使这些激光二极管适用于固态照明系统。