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245 条记录 (耗时 0.033 秒)

    Semiconductor device, method of manufacturing the same, and method of designing the same
    52.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of designing the same 有权
    半导体装置及其制造方法及其设计方法

    公开(公告)号：US07344925B2

    公开(公告)日：2008-03-18

    申请号：US11064820

    申请日：2005-02-25

    申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/331

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

    摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

    摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

    Peeling method
    55.
    发明申请
    Peeling method 有权
    剥皮方法

    公开(公告)号：US20070032042A1

    公开(公告)日：2007-02-08

    申请号：US11542216

    申请日：2006-10-04

    申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

    Method of transferring a laminate and method of manufacturing a semiconductor device
    59.
    发明授权
    Method of transferring a laminate and method of manufacturing a semiconductor device 有权
    层压体的转印方法及半导体装置的制造方法

    公开(公告)号：US08945331B2

    公开(公告)日：2015-02-03

    申请号：US12502428

    申请日：2009-07-14

    申请人： Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    发明人： Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    IPC分类号： B32B38/10 ,  H01L21/762 ,  H01L21/20

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

    摘要： An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

    摘要翻译： 本发明的目的是提供一种在短时间内将被剥离物转印到转印部件上而不会对层压体内被剥离对象造成损伤的方法。 另外，本发明的另一个目的是提供一种半导体器件的制造方法，其中将制造在衬底上的半导体元件转移到通常为塑料衬底的转印构件上。 该方法的特征在于包括：在基板上形成剥离层和待剥离物体; 通过双面胶带粘合要剥离的物体和支撑体; 通过使用物理方法剥离剥离层的物体，然后将被剥离物接合到转印体上; 并将支撑体和双面胶带从要剥离的物体上剥离。