摘要:
The specification describes SDIO devices and SDIO cards wherein the SDIO devices are provided with enhanced functionality, and the SDIO cards are provided with enhanced IC capacity. A variety of multi-chip-module (MCM) approaches are used to increase the IC capacity of the SDIO card.
摘要:
The specification describes SDIO devices and SDIO cards wherein the SDIO devices are provided with enhanced functionality, and the SDIO cards are provided with enhanced IC capacity. A variety of multi-chip-module (MCM) approaches are used to increase the IC capacity of the SDIO card.
摘要:
The specification describes a flexible membrane test apparatus and test method for high-speed IC chips. The method and apparatus rely on locating the reference components of the test circuit very close to the contact pads of the IC chip under test. This is achieved in one embodiment by locating those components adjacent to the flexible membrane. In another embodiment, the reference components may be attached to the membrane itself, so the length of the runners connecting the contact points of the tester and the critical reference components is optimally reduced. In yet a further embodiment, the entire test circuit, in the form of an IC test chip, is located on the membrane.
摘要:
Described is a novel packaging of MCM tiles without wire-bond interconnections and in a total thickness which is reduced relative to conventional MCM packaging. The MCM tile includes a substrate with a plurality of peripheral metallizations and at least one chip flip-chip mounted on the substrate. The PWB is provided with an aperture which is smaller than the size of the silicon substrate but larger than the outside dimensions of the mounted chips. The substrate is positioned on the PWB so that its ends overlap areas of the PWB adjacent the aperture and the chips fit into the aperture. Peripheral metallizations on the substrate are interconnected to metallizations on the PWB by either solder reflow technology or conductive adhesive technology.
摘要:
The quality of soldering produced on devices such as printed circuit boards and multichip modules is significantly improved through use of a specific size distribution of solder particles. In particular, the solder includes a vehicle and solder particles of specific size. In general, an appropriate distribution of both large and small particles should be employed. Through this expedient short circuits and soldering defects in fine line devices are reduced.
摘要:
Soldering is performed and the residues associated with the soldering process are removed through the use of a specific process. Components such as two integrated circuits or an integrated circuit and mounting board are initially tacked by compression bonding or through the use of adhesives. Flux is introduced, and the components to be soldered are brought to reflow temperature. The flux is chosen so that upon reflow and subsequent cooling to a temperature of 100.degree. C., or lower, the flux remains in liquid state. The flux is then easily removed by cleaning with a miscible liquid that is subsequently removed through processes such as spinning and evaporation.
摘要:
A flip-bonded dual-substrate inductor includes a base substrate, a first inductor body portion provided on a surface of the base substrate, a cover substrate, a second inductor body portion provided on a surface of a cover substrate, and a nanoparticle bonding material provided between the base substrate surface and the cover substrate surface to electrically connect the first inductor body portion and the second inductor body portion. A method for fabricating a flip-bonded dual-substrate inductor including forming a first inductor body portion on a surface of a base substrate, forming a second inductor body portion on a surface of a cover substrate, and attaching the base substrate surface to the cover substrate surface using a nanoparticle bonding material that electrically connects the first inductor body portion and the second inductor body portion.
摘要:
Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.
摘要:
An RF/IPD package with improved thermal management is described. The IPD substrate is attached to a system substrate with a thin RF chip mounted in the standoff between the IPD substrate and the system substrate. RF interconnections are made between the top of the RF chip and the bottom of the IPD substrate. Heat sinking is provided by bonding a heat sink layer on the RF chip to a heat sink layer on the system substrate. The heat sink may also serve as a ground plane connection. Combinations of other types of integrated devices may be fabricated using this approach.
摘要:
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.