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    Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device
    54.
    发明授权
    Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device 失效
    用于通过光束照射器和光束反射装置形成单晶薄膜的装置

    公开(公告)号：US6032611A

    公开(公告)日：2000-03-07

    申请号：US820600

    申请日：1997-03-19

    申请人： Toshifumi Asakawa ,  Masahiro Shindo ,  Toshikazu Yoshimizu ,  Sumiyoshi Ueyama

    发明人： Toshifumi Asakawa ,  Masahiro Shindo ,  Toshikazu Yoshimizu ,  Sumiyoshi Ueyama

    IPC分类号： C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  C30B23/02 ,  C30B25/10 ,  H01L21/20 ,  H01L21/205 ,  C23C16/00

    CPC分类号： H01L21/02546 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  C30B23/02 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02689 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1008

    摘要： In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.

    摘要翻译： 为了使用等离子体CVD在多晶衬底上形成单晶薄膜，由ECR离子发生器（2）形成向下的主要为中性的Ne原子电流。 从反应气体导入管（13）供给的反应气体（例如硅烷气体）通过Ne原子电流的作用被喷射到SiO2基板（11）上，使得在基板上生长非晶Si薄膜 11）通过等离子体CVD反应。 同时，具有高方向性的Ne原子电流的一部分直接入射到衬底（11）上，而另一部分在其反射器（12）弯曲之后入射到衬底（11）上。 反射器（12）被设定为入射到基板（11）上的Ne原子电流部分的所有方向垂直于单晶Si的最密的平面。 因此，通过布拉维斯定律的作用，将生长的非晶Si顺序地转变为具有如此规定的晶轴的单晶Si薄膜，使得最密的平面垂直于相应的入射方向取向。 因此，在多晶基板上形成单晶薄膜。

    Method for producing high quality thin layer films on substrates
    59.
    发明授权
    Method for producing high quality thin layer films on substrates 失效
    在基材上生产高品质薄膜的方法

    公开(公告)号：US5306530A

    公开(公告)日：1994-04-26

    申请号：US980496

    申请日：1992-11-23

    申请人： Myron Strongin ,  Mark Ruckman ,  Daniel Strongin

    发明人： Myron Strongin ,  Mark Ruckman ,  Daniel Strongin

    IPC分类号： C23C16/46 ,  C23C16/48 ,  B05D3/06

    CPC分类号： C23C16/487 ,  C23C16/46 ,  C23C16/485 ,  C23C16/486

    摘要： A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

    摘要翻译： 公开了一种在衬底表面上生产高质量的无机化合物薄膜的方法。 该方法包括将预选的分子前体的混合物冷凝在底物的表面上，随后使用高能光子或带电粒子照射诱导反应物质的形成。 反应性物质彼此反应以在基材的表面上产生所需化合物的膜。

    Method of forming thin films
    60.
    发明授权
    Method of forming thin films 失效
    薄膜形成方法

    公开(公告)号：US5089289A

    公开(公告)日：1992-02-18

    申请号：US311094

    申请日：1989-02-15

    申请人： Naoki Ito

    发明人： Naoki Ito

    IPC分类号： H01L31/04 ,  C23C16/48 ,  H01L21/205

    CPC分类号： C23C16/486

    摘要： Thin films having controlled properties are formed on a substrate by a method comprising the steps of(a) placing the substrate on a support member within a reaction chamber capable of being evacuated;(b) introducing a flow of material gas into the reaction chamber through a gas inlet port such that the material gas flows toward the substrate;(c) accelerating charged particles from a charged particle beam source to a predetermined energy level;(d) introducing the accelerated charged particles as a beam into the reaction chamber such that the beam intersects with the flow of material gas in the vincinity of the gas inlet port whereby substantially all of the material collides with charged particles in the beam to form at least one reactive species from the material gas; and(e) allowing the reactive species to flow to and strike the substrate whereby a thin film is formed on the substrate. The nature of the material gas and the energy level of accelerated charged particles are varied to contol the type of reactive species produced.

    摘要翻译： 通过包括以下步骤的方法在基板上形成具有受控特性的薄膜：（a）将基板放置在能够被抽真空的反应室内的支撑部件上; （b）通过气体入口将材料气体流引入反应室，使得材料气体朝向衬底流动; （c）将带电粒子从带电粒子束源加速至预定能级; （d）将加速的带电粒子作为光束引入反应室，使得光束与气体入口端口的气流中的材料气体的流动相交，由此基本上所有的材料都与梁中的带电粒子碰撞形成 至少一种来自材料气体的活性物质; 和（e）允许反应性物质流动并撞击基底，由此在基底上形成薄膜。 材料气体的性质和加速带电粒子的能级变化，以调节所产生的反应物种的类型。