公开(公告)号：US11764034B2

公开(公告)日：2023-09-19

申请号：US16878098

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Shin Hirotsu ,  Takenobu Ikeda ,  Koichi Nagami ,  Shinji Himori

IPC: H01J37/32 ,  H05H1/00 ,  H01H1/46

CPC classification number: H01J37/32183 ,  H01H1/46 ,  H01J37/32568 ,  H01J37/32715 ,  H05H1/01

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US20230282456A1

公开(公告)日：2023-09-07

申请号：US17898853

申请日：2022-08-30

Applicant: KIOXIA CORPORATION

Inventor： Tomohiro TAMURA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J2237/2007 ,  H01J2237/334 ,  H01J2237/20278 ,  H01J2237/20235

Abstract: According to one embodiment, a plasma processing apparatus generates plasma between a lower electrode and an upper electrode. The plasma processing apparatus includes a processing table, a central top plate, an outer peripheral top plate, and a driver. The processing table is electrically connected to the lower electrode and includes a mounting surface on which a substrate to be treated is mounted. The central top plate is electrically connected to the upper electrode and includes a central surface facing the mounting surface. The outer peripheral top plate is electrically connected to the upper electrode and includes an outer peripheral surface facing the mounting surface and surrounds the outer periphery of the central surface. The driver relatively displaces the central top plate and the outer peripheral top plate.

公开(公告)号：US11749510B2

公开(公告)日：2023-09-05

申请号：US17200414

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro Sato ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC: C23C16/509 ,  C23C16/50 ,  H01J37/32 ,  H05H1/46 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/0228 ,  H01L21/02211

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

公开(公告)号：US11742180B2

公开(公告)日：2023-08-29

申请号：US16919650

申请日：2020-07-02

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01L21/00 ,  H01J37/32 ,  H01J37/248

CPC classification number: H01J37/32082 ,  H01J37/248 ,  H01J37/32568

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

公开(公告)号：US20230245870A1

公开(公告)日：2023-08-03

申请号：US18101676

申请日：2023-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroyuki MATSUURA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32541 ,  C23C16/45536 ,  C23C16/46 ,  H01J2237/201 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

公开(公告)号：US20230197406A1

公开(公告)日：2023-06-22

申请号：US18168421

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32541 ,  H01J37/3266 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US20230187179A1

公开(公告)日：2023-06-15

申请号：US18105395

申请日：2023-02-03

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32568 ,  H01J37/32146 ,  H01J37/32834

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrates is processed; and a plasma generator including: a first gas supply pipe through which a first gas is supplied; an application electrode to which a high frequency power is applied; a reference electrode to which a reference potential is applied by being grounded; and a light emitting tube by which the first gas is photo-exited.

公开(公告)号：US11651991B2

公开(公告)日：2023-05-16

申请号：US17334639

申请日：2021-05-28

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Alexei Marakhtanov ,  John Patrick Holland ,  Keith Gaff ,  Felix Kozakevich

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6833

Abstract: A wafer support structure in a chamber of a semiconductor manufacturing apparatus is provided. The wafer support structure includes a dielectric block having a bottom surface and a top surface supports a wafer when present. The wafer support structure includes a baseplate for supporting the dielectric block. The wafer support structure includes a first electrode embedded in an upper part of the dielectric block. The first electrode is proximate and below the top surface of the dielectric block. A top surface of the first electrode is substantially parallel to the top surface of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. The wafer support structure includes a second electrode embedded in the dielectric block. The wafer support structure includes a second electrode disposed below the first electrode and a separation distance is defined between the first electrode and the second electrode within the dielectric block. The wafer support structure includes a radio frequency (RF) gasket provides an electrical connection between the second electrode and the a baseplate.

公开(公告)号：US11651966B2

公开(公告)日：2023-05-16

申请号：US17336580

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Kenneth Collins ,  Steven Lane ,  Gonzalo Monroy ,  Yue Guo

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01J37/3255 ,  H01J37/32137 ,  H01J37/32568 ,  H01L21/67069 ,  H01J37/32091 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/002 ,  H01J2237/3174 ,  H01J2237/3341

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

公开(公告)号：US11646184B2

公开(公告)日：2023-05-09

申请号：US17102419

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/30 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/332

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.