POSITIVE-WORKING PHOTORESIST COMPOSITION WITH IMPROVED PATTERN PROFILE AND DEPTH OF FOCUS (DOF)

    公开(公告)号:US20240045333A1

    公开(公告)日:2024-02-08

    申请号:US18256340

    申请日:2022-01-05

    CPC classification number: G03F7/039 G03F7/162 G03F7/0048 G03F7/2004

    Abstract: The disclosed subject matter relates to resist compositions that include the following components: Component a) a blend of two Novolak polymers having structures (I) and (II); component b) a diazo-naphthoquinone sulfonate (DNQ-PAC) component which is a single material or a mixture of materials having general formula having structure (III) or having general formula (III-1); is a dissolution enhancer component comprising a polyphenolic compound which is a single compound or a mixture of at least two compounds selected from the group consisting of an oligomeric fractionated Novolak, a compounds having general structure (VI) and a compound having general structure (VII), wherein Rde1, Rde2, Rde3, Rde4 and Rde5 are individually selected from a C-1 to C-4 alkyl; component d) a surfactant; and component e) an organic spin casting solvent, and an optional component f) a heterocyclic thiol.

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