-
公开(公告)号:US11932713B2
公开(公告)日:2024-03-19
申请号:US16236883
申请日:2018-12-31
Applicant: Rohm and Haas Electronic Materials LLC
Inventor: Emad Aqad , James F. Cameron , James W. Thackeray
IPC: G03F7/38 , C07F11/00 , C08F230/04 , C09D133/04 , C09D133/14 , C09D143/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32
CPC classification number: C08F230/04 , C07F11/00 , C09D133/04 , C09D133/14 , C09D143/00 , G03F7/0042 , G03F7/038 , G03F7/039 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/322 , G03F7/38
Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.
-
公开(公告)号:US20240085789A1
公开(公告)日:2024-03-14
申请号:US18038574
申请日:2021-11-10
Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
Inventor: Yumi SATO , Daichi MIYAHARA , Miho UMEKI
CPC classification number: G03F7/0387 , C08G73/105 , G03F7/039
Abstract: A photosensitive polyimide resin composition containing: a ring-closed polyimide resin (A) having a structure represented by Formula (1) and a weight average molecular weight of 70000 or less; and a polyfunctional radically polymerizable compound (B) having 4 or more and 100 or less radically polymerizable functional groups.
-
53.
公开(公告)号:US11914304B2
公开(公告)日:2024-02-27
申请号:US17394926
申请日:2021-08-05
Inventor: Shailesh N. Joshi , Gaurav Singhal , Paul Vannest Braun , Danny J. Lohan , Kai-Wei Lan
CPC classification number: G03F7/70408 , C25D5/022 , G03F7/039 , G03F7/40 , G03F7/422 , G03F7/70025 , G03H1/12
Abstract: A method to control the density of a three-dimensional photonic crystal template involves changing the irradiation time from at least four laser beams to yield a periodic percolating matrix of mass and voids free of condensed matter from a photoresist composition. The photoresist composition includes a photoinitiator at a concentration where the dose or irradiation is controlled by the irradiation time and is less than the irradiation time that would convert all photoinitiator to initiating species such that the density of the three-dimensional photonic crystal template differs for different irradiation times. A deposition of reflecting or absorbing particles can be patterned on the surface of the photoresist composition to form a template with varying densities above different areas of the substrate.
-
公开(公告)号:US11914300B2
公开(公告)日:2024-02-27
申请号:US17161058
申请日:2021-01-28
Applicant: FUJIFILM Corporation
Inventor: Tetsuya Kamimura
IPC: G03F7/32 , B24B37/00 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/16 , G03F7/20 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/304 , H01L21/3065 , H01L21/311 , H01L21/32 , H01L21/3205 , H01L21/321 , H01L21/768
CPC classification number: G03F7/327 , B24B37/00 , G03F7/038 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/0752 , G03F7/0758 , G03F7/16 , G03F7/167 , G03F7/2004 , G03F7/2006 , G03F7/325 , G03F7/40 , H01L21/027 , H01L21/0274 , H01L21/28 , H01L21/304 , H01L21/3065 , H01L21/31116 , H01L21/32 , H01L21/3205 , H01L21/321 , H01L21/3212 , H01L21/768 , H01L21/76802 , H01L21/76829 , H01L21/7684 , H01L21/76843 , H01L21/76877
Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.
-
公开(公告)号:US20240061335A1
公开(公告)日:2024-02-22
申请号:US18278921
申请日:2022-02-03
Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) , IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
Inventor: Bong Soo KIM , Wanho CHO , Do Hwan KIM , Hyukmin KWEON , Chaeyoung LEE , Sangjun PARK
CPC classification number: G03F7/039 , C08K5/28 , C08L75/04 , G03F7/2037
Abstract: The present disclosure relates to a crosslinkable compound, a composition containing the same for formation of a solid electrolyte, a method of preparing a solid electrolyte by using the composition, a solid electrolyte, and an electronic element including the solid electrolyte.
-
公开(公告)号:US11906901B2
公开(公告)日:2024-02-20
申请号:US17340300
申请日:2021-06-07
Applicant: International Business Machines Corporation
Inventor: Dario Goldfarb , Ekmini Anuja De Silva , Jing Guo , Jennifer Church , Luciana Meli
CPC classification number: G03F7/0392 , G03F7/0042 , G03F7/0043 , G03F7/2004
Abstract: Alternating copolymers having hydrocarbon-substituted terminal units and repeat units each containing two different monomer units with extreme ultraviolet (EUV)-absorbing elements are disclosed. Alternating copolymers having organic terminal units and repeat units each containing a monomer unit with an EUV-absorbing element and an organic monomer unit are also disclosed. A process of forming a polymer resist, which includes providing an alternating copolymer having repeat units with at least one EUV-absorbing monomer unit and replacing end groups of the alternating copolymer with unreactive terminal units, is disclosed as well.
-
57.
公开(公告)号:US20240045333A1
公开(公告)日:2024-02-08
申请号:US18256340
申请日:2022-01-05
Applicant: Merck Patent GmbH
Inventor: Hung-Yang CHEN , Kun SI , Chunwei CHEN , Zhong LI , Hengpeng WU
CPC classification number: G03F7/039 , G03F7/162 , G03F7/0048 , G03F7/2004
Abstract: The disclosed subject matter relates to resist compositions that include the following components: Component a) a blend of two Novolak polymers having structures (I) and (II); component b) a diazo-naphthoquinone sulfonate (DNQ-PAC) component which is a single material or a mixture of materials having general formula having structure (III) or having general formula (III-1); is a dissolution enhancer component comprising a polyphenolic compound which is a single compound or a mixture of at least two compounds selected from the group consisting of an oligomeric fractionated Novolak, a compounds having general structure (VI) and a compound having general structure (VII), wherein Rde1, Rde2, Rde3, Rde4 and Rde5 are individually selected from a C-1 to C-4 alkyl; component d) a surfactant; and component e) an organic spin casting solvent, and an optional component f) a heterocyclic thiol.
-
58.
公开(公告)号:US11874603B2
公开(公告)日:2024-01-16
申请号:US17475436
申请日:2021-09-15
Inventor: Philjae Kang , Kwang Mo Choi , Yoo Jung Yoon , Won Seok Lee , Hae-Jin Lim
CPC classification number: G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/325 , G03F7/34
Abstract: Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.
-
59.
公开(公告)号:US11874601B2
公开(公告)日:2024-01-16
申请号:US17304442
申请日:2021-06-21
Applicant: TOKYO OHKA KOGYO CO., LTD.
Inventor: KhanhTin Nguyen
IPC: G03F7/004 , G03F7/038 , G03F7/039 , C07D333/70 , C07D327/06 , C07C381/02 , C07D319/20 , C07D311/66 , C07D317/50 , C07C381/12
CPC classification number: G03F7/0045 , C07C381/12 , C07D311/66 , C07D317/50 , C07D319/20 , C07D327/06 , C07D333/70 , G03F7/0382 , G03F7/0392
Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.
-
公开(公告)号:US20240004293A1
公开(公告)日:2024-01-04
申请号:US18468245
申请日:2023-09-15
Applicant: FUJIFILM Corporation
Inventor: Naoya HATAKEYAMA , Akiyoshi GOTO , Hideyuki ISHIHARA , Michihiro SHIRAKAWA , Yosuke BEKKI
IPC: G03F7/039 , G03F7/004 , G03F7/038 , C08F220/18 , C08F220/38 , C08F220/28 , C08F220/36 , C08F212/14
CPC classification number: G03F7/039 , C08F220/282 , G03F7/038 , C08F220/1809 , C08F220/382 , C08F220/281 , C08F220/1808 , C08F220/283 , C08F220/365 , C08F220/1807 , C08F220/1806 , C08F220/1811 , C08F212/22 , C08F220/1818 , G03F7/0045
Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin which is decomposed by action of acid to increase polarity; and (B) a compound which generates an acid by irradiation with an actinic ray or a radiation, in which the resin (A) and the acid generated from the compound (B) form a bond by the actinic ray or the radiation or by the action of acid.
-
-
-
-
-
-
-
-
-