公开(公告)号：US20050048791A1

公开(公告)日：2005-03-03

申请号：US10652546

申请日：2003-08-28

Applicant: Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

Inventor： Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

IPC: H01L21/336 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31111

Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.

Abstract translation: 描述制造半导体器件的方法。 该方法包括在衬底上形成高k栅极电介质层，以及修改高k栅极电介质层的第一部分，以确保其可被选择性地去除到高k栅极电介质层的第二部分。

公开(公告)号：US20190205273A1

公开(公告)日：2019-07-04

申请号：US16146534

申请日：2018-09-28

Applicant: Jack KAVALIEROS ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory CHEN ,  Van LE ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin SUMBUL

Inventor： Jack KAVALIEROS ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory CHEN ,  Van LE ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin SUMBUL

IPC: G06F13/16 ,  H01L25/18 ,  G11C11/419 ,  G11C11/408 ,  H01L23/522 ,  H03K19/21

Abstract: Techniques and mechanisms for providing data to be used in an in-memory computation at a memory device. In an embodiment a memory device comprises a first memory array and circuitry, coupled to the first memory array, to perform a data computation based on data stored at the first memory array. Prior to the computation, the first memory array receives the data from a second memory array of the memory device. The second memory array extends horizontally in parallel with, but is offset vertically from, the first memory array. In another embodiment, a single integrated circuit die includes both the first memory array and the second memory array.

公开(公告)号：US20190080731A1

公开(公告)日：2019-03-14

申请号：US16124068

申请日：2018-09-06

Applicant: Jack KAVALIEROS ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory CHEN ,  Van LE ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin SUMBUL

Inventor： Jack KAVALIEROS ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory CHEN ,  Van LE ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin SUMBUL

IPC: G11C7/10 ,  G11C11/56 ,  G11C7/18

Abstract: Techniques and mechanisms for providing data to be used in an in-memory computation at a memory device. In an embodiment a memory device comprises a first memory array and circuitry, coupled to the first memory array, to perform a data computation based on data stored at the first memory array. Prior to the computation, the first memory array receives the data from a second memory array of the memory device. The second memory array extends horizontally in parallel with, but is offset vertically from, the first memory array. In another embodiment, a single integrated circuit die includes both the first memory array and the second memory array.

公开(公告)号：US09245989B2

公开(公告)日：2016-01-26

申请号：US13976414

申请日：2011-12-19

Applicant: Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

Inventor： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC: H01L29/775 ,  H01L29/66 ,  G05F3/02 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  G05F3/02 ,  H01L21/02603 ,  H01L21/02636 ,  H01L21/225 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/04 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78696

Abstract: Transistors suitable for high voltage and high frequency operation. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first semiconductor material, a source region electrically coupled with a first end of the channel region, a drain region electrically coupled with a second end of the channel region, and an extrinsic drain region disposed between the channel region and drain region. The extrinsic drain region has a wider bandgap than that of the first semiconductor. A gate stack including a gate conductor and a gate insulator coaxially wraps completely around the channel region, and drain and source contacts similarly coaxially wrap completely around the drain and source regions.

Abstract translation: 晶体管适用于高电压和高频工作。 纳米线垂直或水平地布置在基底上。 纳米线的纵向长度被限定为第一半导体材料的沟道区域，与沟道区域的第一端电耦合的源极区域，与沟道区域的第二端电耦合的漏极区域和外部漏极 区域设置在沟道区域和漏极区域之间。 外在漏极区具有比第一半导体更宽的带隙。 包括栅极导体和栅极绝缘体的栅极堆叠器完全同轴地包裹在沟道区域周围，并且漏极和源极触点类似地同轴地围绕漏极和源极区域包裹。

公开(公告)号：US09123567B2

公开(公告)日：2015-09-01

申请号：US13976411

申请日：2011-12-19

Applicant: Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

Inventor： Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/775 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786 ,  H01L27/12 ,  B82Y10/00 ,  H01L29/78

CPC classification number: H01L21/845 ,  B82Y10/00 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

Abstract: Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial gate structure that completely surrounds a channel region of the nanowire transistor. In embodiments, individual PMOS and NMOS channel semiconductor materials are co-integrated with a starting substrate having a blanket layers of alternating Ge/III-V layers. In embodiments, vertical integration of a plurality of stacked nanowires within an individual PMOS and individual NMOS device enable significant drive current for a given layout area.

Abstract translation: 在同一衬底（例如硅）上的非均质材料如III-V族半导体材料和IV族半导体（例如Ge）共同整合的体系结构和技术。 在实施例中，采用具有交替的纳米线和牺牲层的多层非均相半导体材料堆叠以释放纳米线并允许形成完全包围纳米线晶体管的沟道区域的同轴栅极结构。 在实施例中，各个PMOS和NMOS沟道半导体材料与具有交替的Ge / III-V层的覆盖层的起始衬底共同整合。 在实施例中，单个PMOS和单独NMOS器件内的多个堆叠的纳米线的垂直积分能够为给定的布局区域提供显着的驱动电流。

公开(公告)号：US09048314B2

公开(公告)日：2015-06-02

申请号：US14465636

申请日：2014-08-21

Applicant: Robert S. Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin K. Brask ,  Mark L. Doczy ,  Matthew Metz

Inventor： Robert S. Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin K. Brask ,  Mark L. Doczy ,  Matthew Metz

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L29/267 ,  H01L29/10 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7848 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/201 ,  H01L29/207 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7836 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78681

Abstract: A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

公开(公告)号：US08952541B2

公开(公告)日：2015-02-10

申请号：US13352062

申请日：2012-01-17

Applicant: Niloy Mukherjee ,  Gilbert Dewey ,  Matthew V. Metz ,  Jack Kavalieros ,  Robert S. Chau

Inventor： Niloy Mukherjee ,  Gilbert Dewey ,  Matthew V. Metz ,  Jack Kavalieros ,  Robert S. Chau

IPC: H01L21/768 ,  H01L29/08 ,  H01L23/485 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/285 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L21/285 ,  H01L21/28512 ,  H01L21/76831 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/485 ,  H01L29/0895 ,  H01L29/41791 ,  H01L29/452 ,  H01L29/456 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.

Abstract translation: 接触可以通过包括在具有晶体管的衬底上沉积电介质层的方法来制造，蚀刻延伸到源极区的电介质层中的第一开口，在源区上形成绝缘体，在绝缘体上形成接触金属 所述绝缘体将所述接触金属与所述源极区分离，并且基本上填充所述第一开口，其中所述接触金属在所述第一开口被填充之后保持与所述源极区分离。

公开(公告)号：US20140175512A1

公开(公告)日：2014-06-26

申请号：US13722824

申请日：2012-12-20

Applicant: BENJAMIN CHU-KUNG ,  VAN LE ,  ROBERT CHAU ,  SANSAPTAK DASGUPTA ,  GILBERT DEWEY ,  NITI GOEL ,  JACK KAVALIEROS ,  MATTHEW METZ ,  NILOY MUKHERJEE ,  RAVI PILLARISETTY ,  WILLY RACHMADY ,  MARKO RADOSAVLJEVIC ,  HAN WUI THEN ,  NANCY ZELICK

Inventor： BENJAMIN CHU-KUNG ,  VAN LE ,  ROBERT CHAU ,  SANSAPTAK DASGUPTA ,  GILBERT DEWEY ,  NITI GOEL ,  JACK KAVALIEROS ,  MATTHEW METZ ,  NILOY MUKHERJEE ,  RAVI PILLARISETTY ,  WILLY RACHMADY ,  MARKO RADOSAVLJEVIC ,  HAN WUI THEN ,  NANCY ZELICK

IPC: H01L29/78

CPC classification number: H01L21/823821 ,  H01L27/0924 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/785

Abstract: An embodiment uses a very thin layer nanostructure (e.g., a Si or SiGe fin) as a template to grow a crystalline, non-lattice matched, epitaxial (EPI) layer. In one embodiment the volume ratio between the nanostructure and EPI layer is such that the EPI layer is thicker than the nanostructure. In some embodiments a very thin bridge layer is included between the nanostructure and EPI. An embodiment includes a CMOS device where EPI layers covering fins (or that once covered fins) are oppositely polarized from one another. An embodiment includes a CMOS device where an EPI layer covering a fin (or that once covered a fin) is oppositely polarized from a bridge layer covering a fin (or that once covered a fin). Thus, various embodiments are disclosed from transferring defects from an EPI layer to a nanostructure (that is left present or removed). Other embodiments are described herein.

Abstract translation: 一个实施例使用非常薄的层纳米结构（例如，Si或SiGe鳍）作为模板来生长晶体，非晶格匹配的外延（EPI）层。 在一个实施方案中，纳米结构和EPI层之间的体积比使得EPI层比纳米结构厚。 在一些实施例中，在纳米结构和EPI之间包括非常薄的桥接层。 一个实施例包括一个CMOS器件，其中覆盖翅片（或一旦被覆盖的翅片）的EPI层彼此相反地极化。 一个实施例包括一个CMOS器件，其中覆盖翅片（或一旦被覆盖的翅片）的EPI层与覆盖翅片（或一旦被覆盖的翅片）的桥接层相反地偏振。 因此，从EPI层转移到纳米结构（剩下的存在或去除）的缺陷中公开了各种实施例。 本文描述了其它实施例。

公开(公告)号：US08633471B2

公开(公告)日：2014-01-21

申请号：US13032777

申请日：2011-02-23

Applicant: Ravi Pillarisetty ,  Mantu Hudait ,  Marko Radosavljevic ,  Willy Rachmady ,  Gilbert Dewey ,  Jack Kavalieros

Inventor： Ravi Pillarisetty ,  Mantu Hudait ,  Marko Radosavljevic ,  Willy Rachmady ,  Gilbert Dewey ,  Jack Kavalieros

IPC: H01L29/12

CPC classification number: H01L29/155 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/0653 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/7831

Abstract: Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include a modulation doped heterostructure, wherein the modulation doped heterostructure may comprise an active portion having a first bandgap and a delta doped portion having a second bandgap.

Abstract translation: 本文通常描述用于提供包括调制掺杂晶体管的三维互补金属氧化物半导体器件的装置和方法的实施例。 可以描述和要求保护其他实施例，其可以包括调制掺杂异质结构，其中调制掺杂异质结构可以包括具有第一带隙的有源部分和具有第二带隙的δ掺杂部分。

公开(公告)号：US08618609B2

公开(公告)日：2013-12-31

申请号：US12895954

申请日：2010-10-01

Applicant: Brian Doyle ,  Titash Rakshit ,  Jack Kavalieros

Inventor： Brian Doyle ,  Titash Rakshit ,  Jack Kavalieros

IPC: H01L29/66 ,  H01L21/335

CPC classification number: H01L29/7855 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/785

Abstract: Embodiments of an apparatus and methods for improving multi-gate device performance are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述用于提高多栅极器件性能的装置和方法的实施例。 可以描述和要求保护其他实施例。