公开(公告)号：US06873038B2

公开(公告)日：2005-03-29

申请号：US10629761

申请日：2003-07-30

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L21/44

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域中，第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US06624501B2

公开(公告)日：2003-09-23

申请号：US09956944

申请日：2001-09-21

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L2900

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域内的第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US08474126B2

公开(公告)日：2013-07-02

申请号：US13206042

申请日：2011-08-09

申请人： Takeshi Shioga ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01S4/00

CPC分类号： H01L23/642 ,  H01G9/012 ,  H01G9/048 ,  H01G9/15 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49144 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method of a semiconductor device include forming a capacitor by forming an oxide film on a surface of a valve metal based on anodic oxidization and by forming a conductive part made of a conductive material on the oxide film; adhering the capacitor on a semiconductor element mounted on a supporting substrate; and coupling the capacitor to the supporting substrate via an outside connection terminal.

摘要翻译： 半导体器件的制造方法包括通过在基于阳极氧化的阀金属的表面上形成氧化膜并且在氧化膜上形成由导电材料制成的导电部分来形成电容器; 将电容器粘附在安装在支撑基板上的半导体元件上; 以及经由外部连接端子将所述电容器耦合到所述支撑基板。

公开(公告)号：US07778009B2

公开(公告)日：2010-08-17

申请号：US11698946

申请日：2007-01-29

申请人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

IPC分类号： H01G4/06 ,  H01G4/228 ,  H01G4/005

CPC分类号： H01G4/228 ,  H01G4/33 ,  H01L2224/05001 ,  H01L2224/05016 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2924/00014

摘要： A thin-film capacitor element having two conductive films and a dielectric film sandwiched therebetween is provided above a substrate. An inorganic protective film covering the thin-film capacitor element and having a second opening exposing at least a part of the conductive films is provided. An organic protective film covering the thin-film capacitor element from above the inorganic protective film and having a first opening therein, which is larger than the second opening and exposes the second opening, is provided. Besides, a bump connected with the conductive films via the first opening and the second opening is provided.

摘要翻译： 具有两个导电膜和夹在其间的介电膜的薄膜电容器元件设置在基板的上方。 提供了覆盖薄膜电容器元件并具有暴露至少一部分导电膜的第二开口的无机保护膜。 提供了一种有机保护膜，其从无机保护膜上方覆盖薄膜电容器元件，并且其中具有大于第二开口并暴露第二开口的第一开口。 此外，提供了通过第一开口和第二开口与导电膜连接的凸块。

公开(公告)号：US20080073110A1

公开(公告)日：2008-03-27

申请号：US11902251

申请日：2007-09-20

申请人： Takeshi Shioga ,  Kazuaki Kurihara ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Kazuaki Kurihara ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi

IPC分类号： H05K1/16 ,  H05K3/30

CPC分类号： H05K1/162 ,  H01L21/486 ,  H01L23/15 ,  H01L23/498 ,  H01L23/49827 ,  H01L23/50 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K1/112 ,  H05K3/4605 ,  H05K2201/0179 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09627 ,  H05K2201/10378 ,  Y10T29/49002 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.

摘要翻译： 插入件包括：第一贯通电极47被埋入的玻璃基板46; 由玻璃基板支撑的多个树脂层68,20,32; 埋在多个树脂层的第一树脂层68和多个树脂层的第二树脂层20之间并且包括第一电容器电极12a，12b的第二电容器电极16的薄膜电容器18a，18b， 形成在第一电容器电极12 a，12 b和第二电容器电极16之间的相对介电常数为200或更大的第一电容器电极12a，12b和电介质薄膜14，以及第二贯通电极77 a，77b穿透电连接到第一通孔47并与第一电容器电极12a，2b或第二电容器电极16电连接的多个树脂层68,20,32。

公开(公告)号：US20070176175A1

公开(公告)日：2007-08-02

申请号：US11698946

申请日：2007-01-29

申请人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

IPC分类号： H01L29/08

CPC分类号： H01G4/228 ,  H01G4/33 ,  H01L2224/05001 ,  H01L2224/05016 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2924/00014

摘要： A thin-film capacitor element having two conductive films and a dielectric film sandwiched therebetween is provided above a substrate. An inorganic protective film covering the thin-film capacitor element and having a second opening exposing at least a part of the conductive films is provided. An organic protective film covering the thin-film capacitor element from above the inorganic protective film and having a first opening therein, which is larger than the second opening and exposes the second opening, is provided. Besides, a bump connected with the conductive films via the first opening and the second opening is provided.

摘要翻译： 具有两个导电膜和夹在其间的介电膜的薄膜电容器元件设置在基板的上方。 提供了覆盖薄膜电容器元件并具有暴露至少一部分导电膜的第二开口的无机保护膜。 提供了一种有机保护膜，其从无机保护膜上方覆盖薄膜电容器元件，并且其中具有大于第二开口并暴露第二开口的第一开口。 此外，提供了通过第一开口和第二开口与导电膜连接的凸块。

公开(公告)号：US20070034989A1

公开(公告)日：2007-02-15

申请号：US11581383

申请日：2006-10-17

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L29/00

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在此形成下电极（14a），电容器电介质层（15a）和上电极（16a）的电容器（Q 1和Q 2） 在下阻挡层（13）上的顺序; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US20060255816A1

公开(公告)日：2006-11-16

申请号：US11486053

申请日：2006-07-14

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card including probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

公开(公告)号：US20060214213A1

公开(公告)日：2006-09-28

申请号：US11168935

申请日：2005-06-29

申请人： John David Bariecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Bariecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L29/76

CPC分类号： H01L27/11507 ,  H01G4/005 ,  H01G4/33 ,  H01G7/06 ,  H01L27/1085 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： A thin-film capacitor element has at least a lower electrode, a ferroelectric layer, and an upper electrode. The upper electrode adds a compressive stress of 10 MPa to 5 GPa to the ferroelectric layer. The upper electrode includes at least one oxide selected from PtOx, IrOx, RuOx, SrRuOy, and LaNiOy.

摘要翻译： 薄膜电容器元件至少具有下电极，铁电层和上电极。 上电极向铁电层增加10MPa〜5GPa的压应力。 上电极包括至少一种选自PtO x，IrO x，RuO x，SrR y O y， 和LaNiO y y。

公开(公告)号：US20050161604A1

公开(公告)日：2005-07-28

申请号：US11086909

申请日：2005-03-23

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： G01J1/42 ,  G01J5/02 ,  H01L31/101 ,  H01L37/02

CPC分类号： H01L31/101 ,  G01J1/42 ,  H01L37/02

摘要： An SiO2 layer (3), a Ti layer (4), a Pt layer (5), a PLZT layer (6) and an IrO2 layer (7) are formed sequentially on an Si substrate (2). The IrO2 layer (7) functioning as a top electrode has a thickness of about 100 nm. Since the IrO2 layer (7) has conductivity lower than that of Pt or the like conventionally used as a top electrode and a skin depth deeper than that of Pt or the like, sufficient sensitivity can be attained by a thickness of about 100 nm.

摘要翻译： SiO 2层（3），Ti层（4），Pt层（5），PLZT层（6）和IrO 2层（7） 顺序地形成在Si衬底（2）上。 用作顶部电极的IrO 2层（7）具有约100nm的厚度。 由于IrO 2层（7）的导电率比常规用作顶部电极的Pt等等的电导率低，而且比Pt等的深度更深，因此可以通过 厚度约100nm。