利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

72 条记录 (耗时 0.041 秒)

    Ultraviolet light receiving element
    61.
    发明申请
    Ultraviolet light receiving element 审中-公开
    紫外光接收元件

    公开(公告)号：US20090166674A1

    公开(公告)日：2009-07-02

    申请号：US12227529

    申请日：2006-05-24

    申请人： Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    发明人： Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    IPC分类号： H01L31/0352

    CPC分类号： H01L29/2003 ,  H01L31/1126

    摘要： In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band 61 by means of a depleted layer generated by irradiating a light having energy larger than band gap energy of an undoped layer 44, and electron-hole pairs are generated. A band structure is varied by the generated electron-hole pairs, and thus a portion having an energy lower than that of a quasi-Fermi level 62 of an electron at a boundary between an undoped layer 43 and the undoped layer 44, so that a two-dimensional electron gas 63 is formed. Since the two-dimensional electron gas 63 mentioned above serves as a channel, a large current is flowed by applying a voltage between drain electrode 46-source electrode 7.

    摘要翻译： 在使用III族氮化物半导体的紫外光接收元件中，提供了具有增强的光接收灵敏度的紫外光接收元件。 通过照射具有大于未掺杂层44的带隙能量的能量的光而产生的耗尽层，从价带向导带61激发电子，并产生电子 - 空穴对。 通过产生的电子 - 空穴对，并且因此，在未掺杂层43和未掺杂层44之间的边界处，具有能量低于电子的准费米能级62的能量的部分的带结构变化，使得 形成二维电子气63。 由于上述二维电子束63用作沟道，所以通过在漏电极46源电极7之间施加电压而流过大电流。

    LIGHT-EMITTING SEMICONDUCTOR DEVICE
    62.
    发明申请
    LIGHT-EMITTING SEMICONDUCTOR DEVICE 有权
    发光半导体器件

    公开(公告)号：US20090065763A1

    公开(公告)日：2009-03-12

    申请号：US12313123

    申请日：2008-11-17

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

    IPC分类号： H01L33/00

    CPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/40

    摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

    摘要翻译： 本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

    Filter function-equipped optical sensor and flame sensor
    64.
    发明授权
    Filter function-equipped optical sensor and flame sensor 有权
    配有滤光功能的光学传感器和火焰传感器

    公开(公告)号：US07361948B2

    公开(公告)日：2008-04-22

    申请号：US10550824

    申请日：2004-03-23

    申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    IPC分类号： H01L31/062

    CPC分类号： G02B5/284

    摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

    摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
    69.
    发明授权
    Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效
    氮化物半导体层结构和包含其一部分的氮化物半导体激光器

    公开(公告)号：US06829273B2

    公开(公告)日：2004-12-07

    申请号：US10040328

    申请日：2001-12-19

    申请人： Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

    发明人： Hiroshi Amano ,  Isamu Akasaki ,  Yawara Kaneko ,  Norihide Yamada ,  Tetsuya Takeuchi ,  Satoshi Watanabe

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173

    摘要： The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

    摘要翻译： 氮化物半导体层结构包括缓冲层和缓冲层上的复合层。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 复合层是包含AlN的单晶氮化物半导体材料层。 复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。 复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。 第二AlN摩尔分数大于第一AlN摩尔分数。 氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。

    Semiconductor substrate and method for making the same
    70.
    发明授权
    Semiconductor substrate and method for making the same 有权
    半导体衬底及其制造方法

    公开(公告)号：US06537513B1

    公开(公告)日：2003-03-25

    申请号：US09562978

    申请日：2000-04-27

    申请人： Hiroshi Amano ,  Tetsuya Takeuchi ,  Isamu Akasaki

    发明人： Hiroshi Amano ,  Tetsuya Takeuchi ,  Isamu Akasaki

    IPC分类号： C01B3326

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/205

    摘要： A substrate for fabricating semiconductor devices based on Group III semiconductors and the method for making the same. A substrate according to the present invention includes a base substrate, a first buffer layer, and a first single crystal layer. The first buffer layer includes a Group III material deposited on the base substrate at a temperature below that at which the Group III material crystallizes. The Group III material is crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal after the Group III material has been deposited. The first single crystal layer includes a Group III-V semiconducting material deposited on the first buffer layer at a temperature above that at which the Group III semiconducting material crystallizes. In one embodiment of the present invention, a second buffer layer and a second single crystal layer are deposited on the first single crystal layer. The second buffer layer includes a Group III material deposited on the first single crystal layer at a temperature below that at which the Group III material crystallizes. The Group III material is then crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal. The second single crystal layer includes a Group III-V semiconducting material deposited on the second buffer layer at a temperature above that at which the Group III semiconducting material crystallizes.

    摘要翻译： 一种用于制造基于III族半导体的半导体器件的衬底及其制造方法。 根据本发明的基板包括基底，第一缓冲层和第一单晶层。 第一缓冲层包括在低于III族材料结晶温度的温度下沉积在基底基材上的III族材料。 第III组材料通过将缓冲层加热至高于第III族材料结晶后形成单晶的温度而结晶，此后III族材料已沉积。 第一单晶层包括在高于III族半导体材料结晶温度的温度下沉积在第一缓冲层上的III-V族半导体材料。 在本发明的一个实施例中，在第一单晶层上沉积第二缓冲层和第二单晶层。 第二缓冲层包括沉积在第一单晶层上的III族材料，其温度低于III族材料结晶的温度。 然后通过将缓冲层加热到高于III族材料结晶以形成单晶的温度，使第III族材料结晶。 第二单晶层包括在高于III族半导体材料结晶的温度的第二缓冲层上沉积的III-V族半导体材料。