公开(公告)号：US20060204032A1

公开(公告)日：2006-09-14

申请号：US11412151

申请日：2006-04-25

申请人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

发明人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

IPC分类号： G06K9/00 ,  G06K9/36 ,  G06K9/46

CPC分类号： G06T1/0028 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  G06T2201/0083 ,  G06T2201/0202 ,  H04N1/32203 ,  H04N1/32208 ,  H04N1/32293 ,  H04N2201/3233 ,  H04N2201/327

摘要： A method for embedding a watermark into digital data, when the watermark is to be embedded in a digital image, independently changes real number components and imaginary number components of each of coefficient values of a complex watermark coefficient matrix using key, from the watermark to be embedded in the digital image, a step for performing a discrete Fourier inverse transform on the sequence matrix of the changed watermark and generating a watermark pattern; and a step for adding like tiling the water mark pattern to the original image, and generating an embedded image. Further more, a watermark detection method for detecting a watermark from a digital data, a step for separating a block from an arbitrary position on the detected object image, a step for performing a discrete Fourier transform on the block and obtaining a sequence matrix, a step for generating position information for a component that is to be detected and that is specified by the key, a step for detecting a position marker sequence by calculating a phase difference of a sequence by an amount of parallel displacement, for each item of the position information, and extracting offset information which is the amount of parallel displacement when there is agreement between a start point of an embedded watermark and a start point of the block cut from the detected object image, and a step for detecting the embedded watermark cut from the detected object image.

摘要翻译： 一种将水印嵌入数字数据的方法，当将水印嵌入到数字图像中时，使用密钥从水印中独立地改变复数水印系数矩阵的每个系数值的实数分量和虚数分量， 嵌入在数字图像中的步骤，用于对改变的水印的序列矩阵执行离散傅立叶逆变换并产生水印图案; 以及将水印图案拼贴到原始图像上的添加步骤，以及生成嵌入图像。 此外，还提供了一种用于从数字数据中检测水印的水印检测方法，用于从检测到的对象图像上的任意位置分离块的步骤，对该块执行离散付里叶变换并获得序列矩阵的步骤， 用于生成要被检测并由密钥指定的组件的位置信息的步骤，用于通过针对每个位置的项目计算一个序列的平均位移量来检测位置标记序列的步骤 信息，并且提取作为在嵌入水印的开始点与从检测到的对象图像切割的块的开始点之间一致时的平行位移量的偏移信息，以及用于检测从检测到的对象图像剪切的嵌入水印的步骤 检测到物体图像。

公开(公告)号：US20060193491A1

公开(公告)日：2006-08-31

申请号：US11412210

申请日：2006-04-25

申请人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

发明人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

IPC分类号： G06K9/00

CPC分类号： G06T1/0028 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  G06T2201/0083 ,  G06T2201/0202 ,  H04N1/32203 ,  H04N1/32208 ,  H04N1/32293 ,  H04N2201/3233 ,  H04N2201/327

摘要： A method for embedding a watermark into digital data, when the watermark is to be embedded in a digital image, independently changes real number components and imaginary number components of each of coefficient values of a complex watermark coefficient matrix using key, from the watermark to be embedded in the digital image, a step for performing a discrete Fourier inverse transform on the sequence matrix of the changed watermark and generating a watermark pattern; and a step for adding like tiling the water mark pattern to the original image, and generating an embedded image. Further more, a watermark detection method for detecting a watermark from a digital data, a step for separating a block from an arbitrary position on the detected object image, a step for performing a discrete Fourier transform on the block and obtaining a sequence matrix, a step for generating position information for a component that is to be detected and that is specified by the key, a step for detecting a position marker sequence by calculating a phase difference of a sequence by an amount of parallel displacement, for each item of the position information, and extracting offset information which is the amount of parallel displacement when there is agreement between a start point of an embedded watermark and a start point of the block cut from the detected object image, and a step for detecting the embedded watermark cut from the detected object image.

公开(公告)号：US06936847B2

公开(公告)日：2005-08-30

申请号：US10408451

申请日：2003-04-08

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/786 ,  H01L29/15 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US20050151154A1

公开(公告)日：2005-07-14

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/32 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGaN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在光生成区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US20050121692A1

公开(公告)日：2005-06-09

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n−-Zn1-xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US20050098801A1

公开(公告)日：2005-05-12

申请号：US10980258

申请日：2004-11-04

申请人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

发明人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L27/10

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405

摘要： A semiconductor light emitting device includes: a first conductivity type semiconductor layer made of nitride semiconductor; a second conductivity type semiconductor layer made of nitride semiconductor, the second conductivity type semiconductor layer being provided on the first conductivity type semiconductor layer; an active layer made of nitride semiconductor, the active layer being provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode provided on the second conductivity type semiconductor layer, the second electrode having a predetermined pattern; and a reflecting metal layer provided on the second conductivity type semiconductor layer and the second electrode.

摘要翻译： 一种半导体发光器件包括：由氮化物半导体制成的第一导电型半导体层; 由氮化物半导体制成的第二导电型半导体层，所述第二导电类型半导体层设置在所述第一导电型半导体层上; 由氮化物半导体制成的有源层，所述有源层设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间; 电连接到第一导电类型半导体层的第一电极; 设置在所述第二导电类型半导体层上的第二电极，所述第二电极具有预定图案; 以及设置在所述第二导电类型半导体层和所述第二电极上的反射金属层。

公开(公告)号：US06876003B1

公开(公告)日：2005-04-05

申请号：US09519408

申请日：2000-03-03

申请人： Takao Nakamura ,  Hideki Matsubara

发明人： Takao Nakamura ,  Hideki Matsubara

IPC分类号： H01L33/42 ,  H01L27/15

CPC分类号： H01L33/42 ,  Y10S438/94

摘要： A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.

摘要翻译： 在基板上设置发光层。 在发光层上设置p型半导体层。 上电极设置在p型半导体层上。 上电极包括与p型半导体层接触的Au薄膜和形成在其上的n型透明导体膜。 n型透明导体膜通过激光烧蚀形成。

公开(公告)号：US06815316B2

公开(公告)日：2004-11-09

申请号：US10318768

申请日：2002-12-13

申请人： Takao Nakamura

发明人： Takao Nakamura

IPC分类号： C23C1600

CPC分类号： H01L33/0083 ,  Y10S438/931

摘要： A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.

公开(公告)号：US06750322B2

公开(公告)日：2004-06-15

申请号：US09891053

申请日：2001-06-25

申请人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

发明人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

IPC分类号： C07K14705

CPC分类号： G01N33/502 ,  C07K14/705 ,  G01N2333/72

摘要： The present invention has provided a human-derived novel G protein-coupled receptor protein expressed in the brain, rat-derived protein corresponding to it, and their genes. Use of the receptors makes it possible to screen their ligands and compounds that are candidates for medicines. These ligands and candidate compounds would be useful in the diagnosis and treatment of diseases arising from disorders of signal transduction pathway mediated by the G protein-coupled receptor of the invention.

摘要翻译： 通过筛选人海马文库来分离编码人衍生的G蛋白偶联受体蛋白质的全长cDNA。 此外，分离与人源cDNA相对应的来自大鼠的cDNA。 由这些cDNA编码的蛋白质具有降低组胺刺激下细胞内cAMP浓度的活性。 这些蛋白质可用作筛选其配体或筛选能够调节来自上述蛋白质的信号转导的药物的候选化合物的工具。

公开(公告)号：US06724018B2

公开(公告)日：2004-04-20

申请号：US10228289

申请日：2002-08-27

申请人： Koshi Ando ,  Takao Nakamura

发明人： Koshi Ando ,  Takao Nakamura

IPC分类号： H01L310328

CPC分类号： B82Y20/00 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1832

摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

摘要翻译： 蓝紫色近紫外灯管光电二极管，暗电流小，可靠性高，使用寿命长。 针式光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，p -Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。蓝紫色近紫外线雪崩光电二极管 具有小暗电流，高可靠性和长寿命。 雪崩光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层， Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。 层状结构的上侧被蚀刻成台面形状并涂覆有绝缘膜。