公开(公告)号：US20150345645A1

公开(公告)日：2015-12-03

申请号：US14291828

申请日：2014-05-30

申请人： APPLIED MATERIALS, INC.

发明人： MICHAEL C. KUTNEY

IPC分类号： F16K1/52

CPC分类号： F16K1/523 ,  C23C16/4412 ,  C23C16/45561 ,  F16K37/0041 ,  Y10T29/49407

摘要： Embodiments of valves having adjustable hard stops and methods of use thereof are provided herein. The adjustable valve includes a valve body including an inlet and an outlet; a valve member that is moveable between a fully closed position and a fully open position to selectively allow or prevent flow from the inlet to the outlet; and an adjustable hard stop to limit the fully open position of the valve to an adjusted fully open position.

摘要翻译： 本文提供了具有可调节硬止动件的阀的实施例及其使用方法。 可调节阀包括阀体，其包括入口和出口; 阀构件，其能够在完全关闭位置和完全打开位置之间移动，以选择性地允许或防止从入口到出口的流动; 以及可调节的硬止动器，以将阀门的完全打开位置限制到调整后的完全打开位置。

公开(公告)号：US20150325427A1

公开(公告)日：2015-11-12

申请号：US14803336

申请日：2015-07-20

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yosuke OTA ,  Yoshiro HIROSE

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/52

CPC分类号： H01L21/02118 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0228

摘要： Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

摘要翻译： 提供：通过交替执行特定次数在基板上形成碳氮氧化物膜，氧化碳膜或氧化物膜：通过交替地执行特定数量在基板上形成含有特定元素的第一层氮和碳 的时间，在处理室中向基板供给包含特定元素和卤素基团的第一源，并将含有特定元素和氨基的第二源提供给处理室中的基板; 以及通过向所述处理室中的所述衬底供给含氧气体和含氧气体和含氢气体来氧化所述第一层而形成第二层。

公开(公告)号：US09175394B2

公开(公告)日：2015-11-03

申请号：US13043189

申请日：2011-03-08

申请人： Joseph Yudovsky ,  Anh N. Nguyen ,  Tai T. Ngo

发明人： Joseph Yudovsky ,  Anh N. Nguyen ,  Tai T. Ngo

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/28 ,  H01L21/31 ,  H01L21/02 ,  H01L21/314

CPC分类号： C23C16/45574 ,  C23C16/4408 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45591 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141

摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

摘要翻译： 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，室盖组件包括具有上部和下部的通道，其中通道沿着中心轴线延伸，壳体具有内部区域并且至少部分地限定两个或更多个环形通道，插入件设置在 所述内部区域并且限定所述上部，所述上部与所述两个或多个环形通道流体联接，以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

公开(公告)号：US09169558B2

公开(公告)日：2015-10-27

申请号：US13203866

申请日：2009-11-06

申请人： Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyomogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

发明人： Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyomogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

IPC分类号： C23C16/455 ,  H01L21/67

CPC分类号： C23C16/45561 ,  H01L21/67017 ,  Y10T137/0396

摘要： To provide a fluid control apparatus capable of reducing the space, while reducing the cost. A fluid control apparatus has a fluid controlling unit and a fluid introducing unit. The fluid introducing unit is divided into three parts: a first and a second inlet-side shutoff/open parts disposed on the inlet side, each made up of 2×N/2, disposed between the first and second inlet-side shutoff/open parts and the fluid controlling unit.

摘要翻译： 提供能够减少空间的流体控制装置，同时降低成本。 流体控制装置具有流体控制单元和流体引入单元。 流体引入单元被分为三部分：设置在入口侧的第一和第二入口侧截止/打开部分，每个由2×N / 2构成，设置在第一和第二入口侧截止/打开之间 零件和流体控制单元。

公开(公告)号：US20150299853A1

公开(公告)日：2015-10-22

申请号：US14650267

申请日：2013-12-20

申请人： Stefan KELLER ,  Uwe SCHÜSSLER ,  Jose Manuel DIEGUEZ-CAMPO ,  Stefan BANGERT ,  Leo KWAK BYUNG-SUNG

发明人： Stefan KELLER ,  Uwe SCHÜSSLER ,  Jose Manuel DIEGUEZ-CAMPO ,  Stefan BANGERT ,  Leo KWAK BYUNG-SUNG

IPC分类号： C23C16/448 ,  C23C16/06 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4485 ,  C23C14/14 ,  C23C14/246 ,  C23C14/543 ,  C23C16/06 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/52 ,  H01M4/381

摘要： A depositing arrangement for evaporation of a material including an alkali metal or alkaline earth metal, and for deposition of the material on a substrate (4) is described. The arrangement a first chamber (110) configured for liquefying the material, a valve (130) being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve, an evaporation zone (114) being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material, and one or more outlets (116) for directing the vaporized material towards the substrate.

摘要翻译： 描述了用于蒸发包括碱金属或碱土金属的材料并用于将材料沉积在基板（4）上的沉积布置。 该装置构造成用于液化材料的第一室（110），与第一室流体连通并且位于第一室的下游的阀（130），其中阀构造成用于控制液化的流速 材料通过阀，蒸发区（114）与阀流体连通并且位于阀的下游，其中蒸发区被配置为蒸发液化材料，以及一个或多个出口（116），用于引导蒸发的 材料朝向基板。

公开(公告)号：US20150284845A1

公开(公告)日：2015-10-08

申请号：US14405870

申请日：2013-06-05

申请人： KABUSHIKI KAISHA WATANABE SHOKO

发明人： Masayuki Toda ,  Masaru Umeda

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/455

CPC分类号： C23C16/4412 ,  C23C16/4481 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/46

摘要： A film forming apparatus, in which vaporized gas of liquid raw material not adequately vaporized in a vaporizer is completely vaporized passing through a pipe for feeding vaporized gas of liquid raw material arranged between the vaporizer and an film forming chamber, and applies in the film forming chamber, is provided. The apparatus includes a supplying system of liquid raw material for film forming; a vaporizer, which vaporizes the liquid raw material by mixing with carrier gas; a film forming chamber, which flows the vaporized gas of liquid raw material from the vaporizer on a base plate, and forms film; and a pipe feeding vaporized gas of liquid raw material, which supplies gas from the vaporizer to the film forming chamber. The pipe for feeding vaporized gas of liquid raw material has a spiral shape, and the axis as the spiral shape is arranged vertical direction to a floor plane.

摘要翻译： 一种成膜装置，其中在蒸发器中未充分蒸发的液体原料的蒸发气体通过用于供给布置在蒸发器和成膜室之间的液体原料的蒸发气体的管道完全蒸发，并施加到成膜 提供。 该装置包括用于成膜的液体原料供给系统; 蒸发器，其通过与载气混合而使液体原料气化; 成膜室，其将来自蒸发器的液体原料的蒸发气体在基板上流动，形成膜; 以及供给来自蒸发器的气体到成膜室的液体原料的蒸气气体的管。 用于供给液体原料的蒸发气体的管具有螺旋形状，并且作为螺旋形状的轴线布置成与地板平面垂直。

公开(公告)号：US20150267297A1

公开(公告)日：2015-09-24

申请号：US14218374

申请日：2014-03-18

申请人： ASM IP HOLDING B.V.

发明人： Eiichiro Shiba

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/513

CPC分类号： C23C16/45561 ,  C23C16/401 ,  C23C16/448 ,  C23C16/45536 ,  C23C16/505

摘要： A method for performing uniform processing in multiple reaction chambers includes (a) conducting a cycle constituted by steps in each reaction chamber according to the order of the reaction chambers at which the steps are conducted; and then (b) conducting the steps in each reaction chamber after changing the immediately prior order of the reaction chambers at which the steps are conducted; and then (c) repeating process (b) until a target treatment is complete at the multiple reaction chambers. The target treatment conducted on a substrate in each reaction chamber is the same.

摘要翻译： 在多个反应室中进行均匀处理的方法包括：（a）根据进行步骤的反应室的顺序进行由各反应室中的步骤构成的循环; 然后（b）在改变进行步骤的反应室的紧接在前的顺序之前，在每个反应室中进行步骤; 然后（c）重复过程（b），直到在多个反应室完成目标处理。 在每个反应室中在基材上进行的目标处理是相同的。

公开(公告)号：US20150259797A1

公开(公告)日：2015-09-17

申请号：US14316388

申请日：2014-06-26

申请人： Jiangsu Nata Opto-electronic Material Co., Ltd.

发明人： Bao-Yuan LU ,  Ping LU ,  Yi-Jing SHAN ,  Bin SHEN ,  Shuen-Ta TENG

IPC分类号： C23C16/455 ,  F16K11/00 ,  C23C16/18 ,  F17D3/00

CPC分类号： C23C16/18 ,  C23C16/303 ,  C23C16/448 ,  C23C16/45561 ,  F17D3/00 ,  G05D9/12 ,  Y10T137/7287 ,  Y10T137/86493

摘要： Disclosed is a liquid-metal organic compound supply system which is applicable to a metal organic chemical vapor deposition (MOVCD) processing apparatus, including disposing a first bottle body in a thermostat, a second bottle body and a three-way valve in room temperature. Wherein a first connecting end of the three-way valve and a first outlet pipe of the first bottle body connect to the MOVCD processing apparatus, a second connecting end connects to a second inlet pipe of the second bottle body and a third connecting end connects to a first inlet pipe of the first bottle body and a second outlet pipe of the second bottle body. When the present invention is applied to the MOCVD manufacturing process, it prolongs usage period of trimethyl gallium, decreases replacement frequency and increases utilization ratio. Besides, the present invention also decreases the manufacturing and packing costs of trimethyl gallium.

摘要翻译： 公开了一种适用于金属有机化学气相沉积（MOVCD）处理设备的液态金属有机化合物供应系统，包括在室温下将第一瓶体置于恒温器，第二瓶体和三通阀中。 其中三通阀的第一连接端和第一瓶体的第一出口管连接到MOVCD处理装置，第二连接端连接到第二瓶体的第二入口管，第三连接端连接到 第一瓶体的第一入口管和第二瓶体的第二出口管。 当本发明应用于MOCVD制造工艺时，其延长了三甲基镓的使用时间，降低了更换频率并提高了利用率。 此外，本发明还降低了三甲基镓的制造和包装成本。

公开(公告)号：US20150232990A1

公开(公告)日：2015-08-20

申请号：US14457239

申请日：2014-08-12

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Atsushi FUKUMOTO ,  Fumiki AlSO

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/505

CPC分类号： H01J37/3244 ,  C23C16/0245 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45561 ,  H01J37/32082

摘要： A film formation apparatus according to an embodiment includes a first chamber capable of accommodating a substrate therein and a second chamber capable of accommodating a substrate therein. A first oxygen supply system supplies oxygen to the first and second chambers simultaneously. A second oxygen supply system selectively switches a chamber, in which oxygen is supplied, at least between the first chamber and the second chamber.

摘要翻译： 根据实施例的成膜装置包括能够容纳基板的第一室和能够容纳基板的第二室。 第一氧气供应系统同时向第一和第二室供应氧气。 第二供氧系统至少在第一室和第二室之间选择性地切换供应氧的室。

公开(公告)号：US20150221508A1

公开(公告)日：2015-08-06

申请号：US14608080

申请日：2015-01-28

申请人： APPLIED MATERIALS, INC.

发明人： Shinichi KURITA ,  Srikanth V. RACHERLA ,  Suhail ANWAR

IPC分类号： H01L21/02 ,  C23C16/24 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/505

CPC分类号： H01L21/02565 ,  C23C16/24 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02554 ,  H01L21/0262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

摘要翻译： 本公开的实施例通常可以提供一种用于形成薄膜晶体管器件的方法和装置，其包括使用多组分前体气体的铟镓锌氧化物（IGZO）层。 本公开的实施例可以提供等离子体增强化学气相沉积系统，其被配置为在大面积基板上形成IGZO层。 然而，应当理解，本公开在其他系统配置中具有实用性，例如其它类型的化学气相沉积系统和其中将多组分前体气体分配到处理室内和在处理室内的任何其它系统。