公开(公告)号：US09705042B2

公开(公告)日：2017-07-11

申请号：US15226583

申请日：2016-08-02

申请人： X-Celeprint Limited

发明人： Christopher Bower ,  Matthew Meitl ,  David Gomez ,  Salvatore Bonafede ,  David Kneeburg ,  Alin Fecioru ,  Carl Prevatte

IPC分类号： H01L33/38 ,  G09G3/32 ,  H01L25/075 ,  H01L33/62 ,  H01L33/50 ,  H01L33/60 ,  H05B33/08 ,  G02B26/04 ,  G02F1/167 ,  H01L25/16 ,  H01L33/36 ,  H01L33/48 ,  H05K1/03 ,  H05K1/09 ,  H05K1/18 ,  H05K5/00 ,  G09G3/22 ,  H01L27/15 ,  H01L33/20 ,  H01L33/40 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y113/13

CPC分类号： H01L33/385 ,  F21K9/50 ,  F21V9/08 ,  F21Y2101/025 ,  F21Y2105/003 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B26/04 ,  G02F1/167 ,  G09G3/22 ,  G09G3/32 ,  G09G2300/0452 ,  G09G2300/0842 ,  G09G2310/0264 ,  H01L23/4821 ,  H01L23/5381 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/48 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H05B33/089 ,  H05K1/0306 ,  H05K1/09 ,  H05K1/181 ,  H05K1/182 ,  H05K5/0017 ,  H05K2201/0329 ,  H05K2201/10106 ,  H05K2201/10128 ,  H05K2201/10166

摘要： The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 μm to 50 μm), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

公开(公告)号：US09704803B2

公开(公告)日：2017-07-11

申请号：US14857383

申请日：2015-09-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Chih Yu ,  Chien-Mao Chen

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L21/76888 ,  H01L21/485 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/4821 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/5381 ,  H01L23/564

摘要： A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through the shorting bridge. The shorting bridge is insulated to make the conductive lines electrically isolated to each other.

公开(公告)号：US20170103980A1

公开(公告)日：2017-04-13

申请号：US15383214

申请日：2016-12-19

申请人： STMicroelectronics (Rousset) SAS

发明人： Pascal Fornara ,  Christian Rivero

IPC分类号： H01L27/06 ,  H01G5/16 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02 ,  H01G5/011 ,  H01L23/528

CPC分类号： H01L27/0629 ,  H01G5/011 ,  H01G5/16 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/7687 ,  H01L23/4821 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/642 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

摘要： A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

公开(公告)号：US20170084536A1

公开(公告)日：2017-03-23

申请号：US14857383

申请日：2015-09-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Chih YU ,  Chien-Mao CHEN

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76888 ,  H01L21/485 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/4821 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/5381 ,  H01L23/564

摘要： A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through the shorting bridge. The shorting bridge is insulated to make the conductive lines electrically isolated to each other.

公开(公告)号：US09536874B2

公开(公告)日：2017-01-03

申请号：US15077702

申请日：2016-03-22

申请人： STMicroelectronics (Rousset) SAS

发明人： Pascal Fornara ,  Christian Rivero

IPC分类号： H01L23/48 ,  H01L27/06 ,  H01L23/522 ,  H01L21/768 ,  H01G5/16 ,  H01G5/011 ,  H01L23/482 ,  H01L49/02 ,  H01L23/64

CPC分类号： H01L27/0629 ,  H01G5/011 ,  H01G5/16 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/7687 ,  H01L23/4821 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/642 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

摘要： A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

摘要翻译： 可变电容器包括设置在覆盖在基板上的第一金属层中的固定主电容器电极，与固定主电容器电极间隔开的第二主电容器电极和设置在与固定主电容器电极相邻的第一金属层中的可移动电容器电极。 可以使可动电容电极处于与固定主电容器电极欧姆电连接的第一位置，使得可变电容器具有第一电容值或与固定主电容器电极间隔开的第二位置，使得可变电容器具有 第二电容值。

公开(公告)号：US09490202B2

公开(公告)日：2016-11-08

申请号：US14505087

申请日：2014-10-02

申请人： GLOBALFOUNDRIES INC.

发明人： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/00 ,  H01L23/522 ,  H01L23/482 ,  H01L23/528 ,  H01L23/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5222 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/4821 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

摘要翻译： 用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。 将牺牲材料平坦化以暴露导电层的顶表面。 在导电结构和牺牲材料上沉积可渗透盖层，通过可渗透层去除牺牲材料形成自对准气囊。

公开(公告)号：US09437782B2

公开(公告)日：2016-09-06

申请号：US14743975

申请日：2015-06-18

申请人： X-Celeprint Limited

发明人： Christopher Bower ,  Matthew Meitl ,  David Gomez ,  Salvatore Bonafede ,  David Kneeburg ,  Alin Fecioru ,  Carl Prevatte

IPC分类号： H01L33/38 ,  G09G3/32 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  H05B33/08 ,  G02B26/04 ,  G02F1/167 ,  H01L25/16 ,  H01L33/36 ,  H01L33/48 ,  H05K1/03 ,  H05K1/09 ,  H05K1/18 ,  H05K5/00 ,  H01L33/62 ,  F21Y105/00 ,  F21Y113/00 ,  H01L33/20 ,  H01L33/40

CPC分类号： H01L33/385 ,  F21K9/50 ,  F21V9/08 ,  F21Y2101/025 ,  F21Y2105/003 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B26/04 ,  G02F1/167 ,  G09G3/22 ,  G09G3/32 ,  G09G2300/0452 ,  G09G2300/0842 ,  G09G2310/0264 ,  H01L23/4821 ,  H01L23/5381 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/48 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H05B33/089 ,  H05K1/0306 ,  H05K1/09 ,  H05K1/181 ,  H05K1/182 ,  H05K5/0017 ,  H05K2201/0329 ,  H05K2201/10106 ,  H05K2201/10128 ,  H05K2201/10166

摘要： The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 μm to 50 μm), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

摘要翻译： 所公开的技术提供微组装的微型LED显示器和照明元件，其使用太小的微型LED阵列（例如，宽度或直径为10μm至50μm的微型LED），许多或易碎的组装通过 常规手段。 所公开的技术提供了使用微转印技术组装的微型LED显示器和照明元件。 微型LED可以在天然衬底上制备并印刷到显示衬底（例如，塑料，金属，玻璃或其他材料）上，从而避免在显示衬底上制造微型LED。 在某些实施例中，显示器基板是透明和/或柔性的。

公开(公告)号：US20160240454A1

公开(公告)日：2016-08-18

申请号：US14624526

申请日：2015-02-17

申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

发明人： Nathan Perkins

IPC分类号： H01L23/367

CPC分类号： H01L23/367 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/4821 ,  H01L23/49844 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L29/0657 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32225 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/142 ,  H01L2924/1421 ,  H01L2224/45099

摘要： A semiconductor structure includes a semiconductor substrate having a recess disposed beneath a semiconductor device. The semiconductor structure also includes a thermally conductive core disposed in the recess, and a package substrate including a heat sink. The heat sink is in thermal contact with the thermally conductive core.

摘要翻译： 半导体结构包括具有设置在半导体器件下方的凹部的半导体衬底。 半导体结构还包括设置在凹部中的导热芯，以及包括散热器的封装基板。 散热片与导热芯热接触。

公开(公告)号：US09324706B2

公开(公告)日：2016-04-26

申请号：US14957544

申请日：2015-12-02

申请人： STMicroelectronics (Rousset) SAS

发明人： Pascal Fornara ,  Christian Rivero

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L23/482 ,  H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L23/64

CPC分类号： H01L27/0629 ,  H01G5/011 ,  H01G5/16 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/7687 ,  H01L23/4821 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/642 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

摘要： A method is provided for forming an integrated circuit chip with a variable capacitor disposed in a metallization. A back end of line metallization is formed over the semiconductor substrate. The variable capacitor is formed within a cavity of the back end of line metallization. The variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer of the back end of line metallization, a second main capacitor electrode electrically connected to a second metal layer of the back end of line metallization and vertically spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode.

摘要翻译： 提供一种形成具有设置在金属化中的可变电容器的集成电路芯片的方法。 线路金属化的后端形成在半导体衬底上。 可变电容器形成在线金属化后端的腔内。 可变电容器包括设置在线金属化后端的第一金属层中的固定主电容器电极，电连接到线金属化后端的第二金属层并与固定主电容器垂直间隔的第二主电容器电极 电极和设置在与固定主电容器电极相邻的第一金属层中的可动电容电极。

公开(公告)号：US09318419B2

公开(公告)日：2016-04-19

申请号：US14532484

申请日：2014-11-04

申请人： Samsung Electronics Co., Ltd.

发明人： Sok-Won Lee ,  Joon-Hee Lee ,  Jung-Dal Choi ,  Seong-Min Jo

IPC分类号： H01L29/80 ,  H01L31/112 ,  H01L23/482 ,  H01L23/52 ,  H01L21/768 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/764 ,  H01L27/115 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L23/4821 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/764 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76838 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/4827 ,  H01L23/52 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.

摘要翻译： 导电线结构及其形成方法包括第一和第二图案结构，绝缘层图案和绝缘夹层。 第一图案结构包括导线图案和硬掩模，并且沿第一方向延伸。 第二图案结构包括第二导电线图案和另一个硬掩模，并且图案结构的至少一部分沿第一方向延伸。 绝缘层图案接触图形结构的端部。 第一图案结构和绝缘层图案在平面图中形成闭合曲线形状，并且第二图案结构和另一绝缘层图案在平面图中形成另一封闭曲线形状。 绝缘中间层覆盖图案结构的上部和绝缘层图案，图案结构之间的空气间隙和绝缘层图案之间的另一气隙。