公开(公告)号：US20160118526A1

公开(公告)日：2016-04-28

申请号：US14935145

申请日：2015-11-06

Applicant: SOLAR JUNCTION CORPORATION

Inventor： PRANOB MISRA ,  REBECCA ELIZABETH JONES-ALBERTUS ,  TING LIU ,  ILYA FUSHMAN ,  HOMAN B. YUEN

IPC: H01L31/0735 ,  H01L31/18 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/0304

CPC classification number: H01L31/0735 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544

Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.

Abstract translation: 具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂，从而控制太阳能电池的载流能力。 具体地说，公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。 在一个实施例中，晶格匹配多结太阳能电池具有上部子电池，中间子电池和下部稀的氮化物子电池，下部稀土氮化物子电池在基极和/或发射极中具有掺杂， 至少部分地指数地掺杂，以便改善其太阳能电池性能特征。 在构造中，稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配，中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。

公开(公告)号：US20160111576A1

公开(公告)日：2016-04-21

申请号：US14976798

申请日：2015-12-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/077 ,  H01L31/056 ,  H01L31/0224

CPC classification number: H01L31/077 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/515 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/065 ,  H01L31/1816 ,  H01L31/20 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US09263616B2

公开(公告)日：2016-02-16

申请号：US14527274

申请日：2014-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/737 ,  H01L31/00 ,  H01L31/065 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a photovoltaic device includes forming a patterned layer on a doped emitter portion of the photovoltaic device, the patterned layer including openings that expose areas of the doped emitter portion and growing an epitaxial layer over the patterned layer such that a crystalline phase grows in contact with the doped emitter portion and a non-crystalline phase grows in contact with the patterned layer. The non-crystalline phase is removed from the patterned layer. Conductive contacts are formed on the epitaxial layer in the openings to form a contact area for the photovoltaic device.

Abstract translation: 一种用于制造光伏器件的方法包括在光伏器件的掺杂发射极部分上形成图案化层，所述图案化层包括暴露掺杂发射极部分的区域并在图案化层上生长外延层的开口，使得结晶相生长 与掺杂的发射极部分接触并且非结晶相生长与图案化层接触。 从图案化层去除非结晶相。 导电触点形成在开口中的外延层上，以形成光伏器件的接触面积。

公开(公告)号：US20160027940A1

公开(公告)日：2016-01-28

申请号：US14813095

申请日：2015-07-29

Applicant: Magnolia Solar, Inc.

Inventor： Roger E. Welser ,  Ashok K. Sood

IPC: H01L31/0352 ,  H01L31/056 ,  H01L31/0224 ,  H01L31/0445 ,  H01L31/18 ,  H01L31/0203 ,  H01L31/0735 ,  H01L31/0216

CPC classification number: H01L31/1884 ,  G02B1/115 ,  H01L31/0203 ,  H01L31/02165 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/056 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/52 ,  Y02E10/544

Abstract: A material structure and device design are provided that produce efficient photovoltaic power conversion. Materials of different energy gap are combined in the depletion region of a semiconductor junction. A wider energy gap barrier layer is positioned to reduce the diode dark current by suppressing both carrier injection across the junction and recombination rates within the junction. Light guiding layers are placed above and below the active region of the device in order to enhance optical absorption in the lower energy gap material.

Abstract translation: 提供了产生有效的光伏电力转换的材料结构和器件设计。 不同能隙的材料在半导体结的耗尽区域中组合。 定位更宽的能隙阻挡层，以通过抑制跨结的载流子注入和结中的复合速率来减小二极管暗电流。 导光层放置在器件的有源区的上方和下方，以增强较低能隙材料的光吸收。

公开(公告)号：US09136404B2

公开(公告)日：2015-09-15

申请号：US13139019

申请日：2009-10-27

Applicant: Jung-Ho Lee ,  Han-Don Um ,  Sang-Won Jee ,  Kwang-Tae Park ,  Hong-Seok Seo ,  Jin-Young Jung

Inventor： Jung-Ho Lee ,  Han-Don Um ,  Sang-Won Jee ,  Kwang-Tae Park ,  Hong-Seok Seo ,  Jin-Young Jung

IPC: H01L31/00 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/065 ,  H01L31/068 ,  H01L31/075 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/0384 ,  H01L31/065 ,  H01L31/068 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: The present invention relates to a solar cell that can recycle a substrate, and a manufacturing method thereof. The solar cell includes: i) a plurality of nano-structures distanced from each other and extended in one direction; ii) a first conductive layer covering a first end of at least one of the plurality of nano-structures; iii) a second conductive layer distanced from the first conductive layer and covering a second end of the nano-structure; and iv) a dielectric layer disposed between the first conductive layer and the second conductive layer.

Abstract translation: 本发明涉及能够回收基板的太阳能电池及其制造方法。 太阳能电池包括：i）彼此间隔开并沿一个方向延伸的多个纳米结构; ii）覆盖所述多个纳米结构中的至少一个的第一端的第一导电层; iii）与所述第一导电层隔开并覆盖所述纳米结构的第二端的第二导电层; 以及iv）设置在所述第一导电层和所述第二导电层之间的电介质层。

公开(公告)号：US20150255648A1

公开(公告)日：2015-09-10

申请号：US14202049

申请日：2014-03-10

Applicant: TSMC Solar Ltd.

Inventor： Chien-Yao HUANG

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0749

CPC classification number: H01L31/0352 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02587 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541

Abstract: A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The absorber layer includes at least two regions at respectively different horizontally locations. Each respective region has a respectively different concentration profile of an ingredient at a respective depth of the absorber layer.

Abstract translation: 光电器件包括衬底，设置在衬底上的背接触层和设置在后接触层上方的吸收层。 吸收层在不同的水平位置上包括至少两个区域。 每个相应区域在吸收层的相应深度处具有分别不同的成分浓度分布。

公开(公告)号：US09082902B2

公开(公告)日：2015-07-14

申请号：US14578479

申请日：2014-12-21

Applicant: AU Optronics Corp.

Inventor： Peng Chen ,  Shuo-Wei Liang

IPC: H01L31/052 ,  H01L31/0224 ,  H01L31/065 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/022441 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is provided. The substrate of the solar cell has heavily-doped regions and lightly-doped regions. The anode and the cathode are disposed on the back surface of the substrate, and thus the amount of incident light on the front surface of the substrate is increased. The anode and the cathode are in contact with the heavily doped regions to form selective emitter structure, and thus the contact resistance is reduced. The lightly-doped regions, which are not in contact with the anode and the cathode, have lower saturation current, and thus recombination of hole-electron pairs is reduced, and absorption of infrared light is increased.

Abstract translation: 提供太阳能电池。 太阳能电池的衬底具有重掺杂区域和轻掺杂区域。 阳极和阴极设置在基板的背面，因此基板前表面上的入射光量增加。 阳极和阴极与重掺杂区域接触以形成选择性发射极结构，因此接触电阻降低。 与阳极和阴极不接触的轻掺杂区域具有较低的饱和电流，因此空穴 - 电子对的复合减小，并且红外光的吸收增加。

公开(公告)号：US20150104899A1

公开(公告)日：2015-04-16

申请号：US14577676

申请日：2014-12-19

Applicant: EpiWorks, Inc.

Inventor： David Ahmari ,  Swee Lim ,  Shiva Rai ,  David Forbes

IPC: H01L31/18 ,  H01L31/0336 ,  H01L31/0725

CPC classification number: H01L31/18 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/076 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract translation: 公开了多结太阳能电池的制造及其装置。 该结构还适用于提供更均匀且一致的太阳能电池结构的制造，从而提高产量并降低成本。 一些太阳能电池还可以包括一个或多个半导体层中的一个或多个半导体元件的一个或多个组成梯度，从而产生更优化的太阳能电池器件。

公开(公告)号：US20150101660A1

公开(公告)日：2015-04-16

申请号：US14578479

申请日：2014-12-21

Applicant: AU Optronics Corp.

Inventor： Peng Chen ,  Shuo-Wei Liang

IPC: H01L31/0224

CPC classification number: H01L31/022458 ,  H01L31/022441 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is provided. The substrate of the solar cell has heavily-doped regions and lightly-doped regions. The anode and the cathode are disposed on the back surface of the substrate, and thus the amount of incident light on the front surface of the substrate is increased. The anode and the cathode are in contact with the heavily doped regions to form selective emitter structure, and thus the contact resistance is reduced. The lightly-doped regions, which are not in contact with the anode and the cathode, have lower saturation current, and thus recombination of hole-electron pairs is reduced, and absorption of infrared light is increased.

Abstract translation: 提供太阳能电池。 太阳能电池的衬底具有重掺杂区域和轻掺杂区域。 阳极和阴极设置在基板的背面，因此基板前表面上的入射光量增加。 阳极和阴极与重掺杂区域接触以形成选择性发射极结构，因此接触电阻降低。 与阳极和阴极不接触的轻掺杂区域具有较低的饱和电流，因此空穴 - 电子对的复合减小，并且红外光的吸收增加。

公开(公告)号：US20150040974A1

公开(公告)日：2015-02-12

申请号：US14379480

申请日：2013-05-03

Applicant: Tempress IP B.V.

Inventor： Ronald Cornelis Gerard Naber

IPC: H01L31/18 ,  H01L31/065 ,  H01L31/20

CPC classification number: H01L31/1872 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/20 ,  Y02E10/547 ,  Y02P70/521

Abstract: The method of manufacturing a solar cell, which comprises a semiconductor substrate (1) with a first side (1a) and an opposed second side (1b), at which first side an active region doped with charge carriers of a first conductivity type is defined selectively. The method comprises introducing said charge carriers into the substrate (1) on said first side (1a) by ion implantation in an implantation step at a dose level that induces surface amorphization, therewith forming an amorphized region. Thereafter, material in part of the amorphized region is selectively recrystallized to define a first, recrystallized subregion (5), a remaining part of the amorphized region defining a second subregion (15). Subsequently, the recrystallized material of the first subregion (5) is at least partially removed, therewith creating the selectively defined active region and inducing a surface topology between the at least partially removed first subregion (5) and the second subregion (15). An apparatus for carrying out said method and a resulting solar cell having surface topology are also provided.

Abstract translation: 制造太阳能电池的方法包括具有第一侧面（1a）和相对的第二侧面（1b）的半导体衬底（1），其中第一侧限定掺杂有第一导电类型的电荷载流子的有源区 选择性地。 该方法包括通过在注入步骤中以诱导表面非晶化的剂量水平的离子注入将所述电荷载体引入所述第一侧（1a）上的衬底（1）中，从而形成非晶化区域。 此后，部分非晶化区域中的材料被选择性地重结晶以限定第一重结晶子区域（5），限定第二子区域（15）的非晶化区域的剩余部分。 随后，至少部分去除第一子区域（5）的再结晶材料，从而产生选择性限定的有源区域并且在至少部分去除的第一子区域（5）和第二子区域（15）之间引起表面拓扑。 还提供了一种用于执行所述方法的装置和具有表面拓扑结构的所得太阳能电池。