Process and apparatus for treating a workpiece using ozone
    71.
    发明申请
    Process and apparatus for treating a workpiece using ozone 失效
    使用臭氧处理工件的工艺和设备

    公开(公告)号:US20040216763A1

    公开(公告)日:2004-11-04

    申请号:US10859668

    申请日:2004-06-03

    Applicant: Semitool, Inc.

    Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40null C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

    Abstract translation: 一种在处理室中清洗具有金属层的半导体工件的方法包括以下步骤:将包含溶解的二氧化碳的液体溶液引入到工件上,并将臭氧引入到处理室中。 臭氧氧化工件上的污染物,而二氧化碳则抑制金属层的腐蚀。 液体溶液优选加热至大于40℃的温度,并且优选包含注入二氧化碳气体的去离子水。 在清洁过程中,工件优选地在处理室内旋转。 在将液体溶液引入工件之前,臭氧可能被夹带在液体溶液中,或者臭氧可以分开地引入到处理室中。

    Electrode semiconductor workpiece holder and processing methods
    72.
    发明申请
    Electrode semiconductor workpiece holder and processing methods 审中-公开
    电极半导体工件夹具及加工方法

    公开(公告)号:US20040178065A1

    公开(公告)日:2004-09-16

    申请号:US10811710

    申请日:2004-03-29

    Applicant: Semitool, Inc.

    CPC classification number: H01L21/68728 C25D17/06

    Abstract: A semiconductor workpiece holder for use in processing a semiconductor workpiece includes a workpiece support operatively mounted to support a workpiece in position for processing. A finger assembly is operatively mounted upon the workpiece support and includes a finger tip. The finger assembly is movable between an engaged position in which the finger tip is engaged against the workpiece, and a disengaged position in which the finger tip is moved away from the workpiece. Preferably, at least one electrode forms part of the finger assembly and includes an electrode contact for contacting a surface of said workpiece. At least one protective sheath covers at least some of the electrode contact. According to one aspect of the invention, a sheathed electrode having a sheathed electrode tip is positioned against a semiconductor workpiece surface in a manner engaging the workpiece surface with said sheathed electrode tip. A seal is formed about the periphery of the electrode tip, and with the electrode tip engaging the workpiece, a desired electrical contact is made to the workpiece. Thereafter, the workpiece is exposed to desired semiconductor processing conditions.

    Abstract translation: 用于处理半导体工件的半导体工件保持件包括可操作地安装以将工件支撑在适于处理的工件的工件支撑件。 手指组件可操作地安装在工件支撑件上并且包括指尖。 手指组件可在指尖接合工件的接合位置和指尖从工件移开的脱离位置之间移动。 优选地,至少一个电极形成指状组件的一部分,并且包括用于接触所述工件的表面的电极接触。 至少一个护套覆盖至少一些电极接触。 根据本发明的一个方面,具有护套电极末端的护套电极以与所述护套电极末端接合工件表面的方式抵靠半导体工件表面定位。 围绕电极末端的周边形成密封,并且电极末端与工件接合,对工件进行所需的电接触。 此后,将工件暴露于期望的半导体加工条件。

    Wafer container cleaning system
    73.
    发明申请

    公开(公告)号:US20040084066A1

    公开(公告)日:2004-05-06

    申请号:US10286317

    申请日:2002-11-01

    Applicant: Semitool, Inc.

    Abstract: A system and method for cleaning boxes used for handling flat media includes a rotor rotatably mounted within an enclosure, with spray nozzles in the enclosure for spraying fluid toward the rotor. The rotor has at least one box holder assembly for holding a box. At least one retainer bar is located on the rotor for engaging a front section of the box to retain the box in the box holder assembly during rotation of the rotor. The retainer bar is preferably moveable from a first position where the retainer bar restrains the box on the box holder assembly, to a second position where the retainer bar is moved away from the box. The box holder assembly may alternatively include a base with a plurality of grooved elements thereon that are adapted to engage a flange on the box for securing the box to the box holder assembly.

    Workpiece processing system
    74.
    发明申请
    Workpiece processing system 审中-公开
    工件加工系统

    公开(公告)号:US20040040583A1

    公开(公告)日:2004-03-04

    申请号:US10654849

    申请日:2003-09-04

    Applicant: Semitool, Inc.

    Abstract: A workpiece processing system for processing semiconductor wafers and other flat media includes a standalone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

    Abstract translation: 用于处理半导体晶片和其它平面介质的工件处理系统包括具有彼此垂直堆叠的两个或更多个模块的独立处理单元。 第一模块包括臭氧发生器,去离子水供应源,净化气体/干燥气体源,并且任选地包括氢氧化铵发生器。 第二模块优选堆叠在第一模块的顶部上,并且包括与第一模块中的装置通信的处理室。 处理室优选地包括用于保持和旋转工件的转子,一个或多个喷雾歧管,臭氧破坏器,防静电发生器和/或任何其它合适的工件加工装置。 转子优选地设计成容纳两个能够容纳多达25个工件的工件运载盒。 第三模块优选地堆叠在第二模块的顶部并且包括系统电子装置和控制。

    Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

    公开(公告)号:US20040035710A1

    公开(公告)日:2004-02-26

    申请号:US10446047

    申请日:2003-05-28

    Applicant: Semitool, Inc.

    Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

    Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

    公开(公告)号:US20040035708A1

    公开(公告)日:2004-02-26

    申请号:US10417086

    申请日:2003-04-17

    Applicant: Semitool, Inc.

    Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

    Selective treatment of microelectronic workpiece surfaces
    77.
    发明申请
    Selective treatment of microelectronic workpiece surfaces 有权
    微电子工件表面的选择性处理

    公开(公告)号:US20040023494A1

    公开(公告)日:2004-02-05

    申请号:US10632495

    申请日:2003-07-31

    Applicant: Semitool, Inc.

    Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

    Abstract translation: 本发明提供了一种用于处理具有前侧,后侧和外周的工件的方法。 根据该过程,从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生,因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量,流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。

    Cleaning and drying a substrate
    78.
    发明申请
    Cleaning and drying a substrate 审中-公开
    清洗和干燥基材

    公开(公告)号:US20030234029A1

    公开(公告)日:2003-12-25

    申请号:US10608789

    申请日:2003-06-26

    Applicant: Semitool, Inc.

    Inventor: Eric J. Bergman

    Abstract: A method of processing a semiconductor workpiece, wherein sonic agitation is applied to the workpiece during a Marangoni drying or surface tension gradient drying step. Sonic agitation is applied to the workpiece as it is withdrawn from an aqueous liquid in a process vessel, or as the aqueous liquid is drained from the process vessel. As a result, the cleaning and drying steps are performed simultaneously as a single comprehensive process, which enhances workpiece cleaning while reducing processing times, chemical volumes, and overall costs.

    Abstract translation: 一种处理半导体工件的方法,其中在马兰戈尼干燥或表面张力梯度干燥步骤期间,对工件施加声波搅拌。 当工件从处理容器中的水性液体中取出时,或者当处理容器中排出水性液体时,对工件施加声波搅拌。 因此,清洁和干燥步骤作为单一综合处理同时进行,这增强了工件清洁,同时减少了处理时间,化学物质量和总体成本。

    Apparatus and methods for processing a workpiece

    公开(公告)号:US20030176067A1

    公开(公告)日:2003-09-18

    申请号:US10412944

    申请日:2003-04-14

    Applicant: Semitool, Inc.

    Abstract: A system for processing a workpiece includes a head attached to a head lifter. A workpiece is supported in the head between an upper rotor and a lower rotor. A base has a bowl for containing a liquid. The head is movable by the head lifter from a first position vertically above the bowl, to a second position where the workpiece is at least partially positioned in the bowl. The bowl has a contour section with a sidewall having a radius of curvature which increases adjacent to a drain outlet in the bowl, to help rapid draining of liquid from the bowl. The head has a load position, where the rotors are spaced apart by a first amount, and a process position, where the rotors are engaged and sealed against each other. For rapid evacuation of fluid, the head also has a fast drain position, where the rotors are moved apart sufficiently to create an annular drain gap. Fluid is rapid evacuated by spinning the rotors with the head rotors slightly apart and unsealed, causing the fluid to flow our quickly under centrifugal force.

    Method and apparatus for processing wafers under pressure
    80.
    发明申请
    Method and apparatus for processing wafers under pressure 失效
    用于在压力下处理晶片的方法和装置

    公开(公告)号:US20030088995A1

    公开(公告)日:2003-05-15

    申请号:US10334457

    申请日:2002-12-30

    Applicant: Semitool, Inc.

    Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

    Abstract translation: 用于半导体晶片的高压干燥的系统包括将晶片插入开放容器中,将晶片浸入液体中,对容器进行加压密封,用惰性气体加压容器,然后控制 使用从保持在气 - 液界面正下方的深度提取水的可移动排水来排出液体。 此后,可以在容器中降低压力,并且可以除去干燥和干净的晶片。 高压抑制液体的沸点,从而允许使用较高的温度来优化反应性。 超声波与加压流体一起使用,以提高清洁性能。 超临界物质设置在含有晶片的密封容器中以促进清洁和其它处理。

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