公开(公告)号：US07893433B2

公开(公告)日：2011-02-22

申请号：US11854163

申请日：2007-09-12

Applicant: Michael A. Todd ,  Ivo Raaijmakers

Inventor： Michael A. Todd ,  Ivo Raaijmakers

IPC: H01L29/10

CPC classification number: C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

Abstract: Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 Å or less, a surface roughness of about 5 Å rms or less, and a thickness non-uniformity of about 20% or less. Preferred silicon-containing films display a high degree of compositional uniformity when doped or alloyed with other elements. Preferred deposition methods provide improved manufacturing efficiency and can be used to make various useful structures such as wetting layers, HSG silicon, quantum dots, dielectric layers, anti-reflective coatings (ARC's), gate electrodes and diffusion sources.

Abstract translation: 通过使用含硅前体的沉积方法制备薄的，平滑的含硅膜。 在优选的实施方案中，该方法产生连续的并且具有约150或更小的厚度，约5μm或更小的表面粗糙度和约20％或更小的厚度不均匀性的含Si膜。 当与其它元素掺杂或合金化时，优选的含硅膜显示出高度的组成均匀性。 优选的沉积方法提供了改进的制造效率，并且可以用于制备各种有用的结构，例如润湿层，HSG硅，量子点，电介质层，抗反射涂层（ARC），栅电极和扩散源。

公开(公告)号：US07674728B2

公开(公告)日：2010-03-09

申请号：US11693556

申请日：2007-03-29

Applicant: Michael A Todd ,  Ivo Raaijmakers

Inventor： Michael A Todd ,  Ivo Raaijmakers

IPC: H01L21/469

CPC classification number: H01L21/67253 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/4486 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/67115

Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.

Abstract translation: 在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。 注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。 将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

公开(公告)号：US07670944B2

公开(公告)日：2010-03-02

申请号：US11511877

申请日：2006-08-28

Applicant: Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H.A. Granneman

Inventor： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H.A. Granneman

IPC: H01L21/4763

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

Abstract translation: 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US07465658B2

公开(公告)日：2008-12-16

申请号：US11411430

申请日：2006-04-25

Applicant: Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

Inventor： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

IPC: H01L21/4763

CPC classification number: H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

Abstract translation: 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

公开(公告)号：US20070287261A1

公开(公告)日：2007-12-13

申请号：US11844227

申请日：2007-08-23

Applicant: Ivo Raaijmakers ,  Pekka Soininen ,  Ernst Granneman

Inventor： Ivo Raaijmakers ,  Pekka Soininen ,  Ernst Granneman

IPC: H01L21/762

CPC classification number: H01L21/02164 ,  H01L21/02145 ,  H01L21/02178 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/76224

Abstract: A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a monolayer of material, capable of completely filling high aspect ratio trenches. Additionally, the trench-fill material composition can be tailored by processes described herein, particularly to match the coefficient of thermal expansion (CTE) to that of the surrounding substrate within which the trench is formed. Mixed phases of mullite and silica have been found to meet the goals of device isolation and matched CTE. The described process includes mixing atomic layer deposition cycles of aluminum oxide and silicon oxide in ratios selected to achieve the desired composition of the isolation material, namely on the order of 30% alumina and 70% silicon oxide by weight.

Abstract translation: 通过原子层沉积形成电介质膜，以保形地填充狭窄的深沟槽，用于器件隔离。 所示实施方案的方法包括交替地以一系列循环脉冲气相反应物，其中每个循环不超过约单层材料，能够完全填充高纵横比沟槽。 此外，沟槽填充材料组合物可以通过本文所述的方法来定制，特别是使热膨胀系数（CTE）与其中形成沟槽的周围基底的热膨胀系数相匹配。 已经发现莫来石和二氧化硅的混合相达到器件隔离和匹配CTE的目标。 所描述的方法包括以选择的比例混合氧化铝和氧化硅的原子层沉积循环，以达到分离材料的所需组成，即按重量计30％氧化铝和70％氧化硅。

公开(公告)号：US20070224786A1

公开(公告)日：2007-09-27

申请号：US11755528

申请日：2007-05-30

Applicant: Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

Inventor： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC: H01L21/36

CPC classification number: C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

Abstract translation: 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20070166966A1

公开(公告)日：2007-07-19

申请号：US11693556

申请日：2007-03-29

Applicant: Michael Todd ,  Ivo Raaijmakers

Inventor： Michael Todd ,  Ivo Raaijmakers

IPC: H01G9/20 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/67253 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/4486 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/67115

Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.

Abstract translation: 在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。 注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。 将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

公开(公告)号：US07231141B2

公开(公告)日：2007-06-12

申请号：US10654068

申请日：2003-09-03

Applicant: Paul Jacobson ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Robert C. Haro

Inventor： Paul Jacobson ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Robert C. Haro

IPC: A21B2/00 ,  C23C16/00

CPC classification number: A47C31/001 ,  B32B7/02 ,  D10B2331/021 ,  H01L21/28556

Abstract: A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

Abstract translation: 在高温处理室中待加工的基板被预热以避免当基板落在加热的基座上时与热冲击相关的问题。 通过将基板保持在保持在处理温度处于或接近加工温度的基座上直到基板的温度接近处理温度来实现预热。 因此，晶片翘曲和断裂大大降低，并且由于在将感受器维持在恒定温度而不降温和再加热时间的情况下节省时间，晶片产量得到改善。

公开(公告)号：US07220669B2

公开(公告)日：2007-05-22

申请号：US09997396

申请日：2001-11-28

Applicant: Juha Hujanen ,  Ivo Raaijmakers

Inventor： Juha Hujanen ,  Ivo Raaijmakers

IPC: H01L21/4763

CPC classification number: H01F10/3231 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/22 ,  H01F41/307 ,  H01L43/12

Abstract: Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. Furthermore, conductive layers, including magnetic and non-magnetic layers, can be provided by ALD without spiking and other non-uniformity problems. The disclosed methods include forming metal oxide layers by multiple cycles of ALD and subsequently reducing the oxides to metal. The oxides tend to maintain more stable interfaces during formation.

Abstract translation: 提供了用于在磁性装置中形成均匀薄层的方法。 原子层沉积（ALD）可以产生原子尺度均匀厚的层。 例如，磁性隧道结电介质可以提供4个单层或更小厚度的完美均匀度。 此外，包括磁性和非磁性层的导电层可以由ALD提供，而不会引起尖峰和其他不均匀性问题。 所公开的方法包括通过多次ALD形成金属氧化物层，随后将氧化物还原成金属。 氧化物在形成过程中往往保持更稳定的界面。

公开(公告)号：US20070089669A1

公开(公告)日：2007-04-26

申请号：US11605615

申请日：2006-11-27

Applicant: Ivo Raaijmakers

Inventor： Ivo Raaijmakers

IPC: C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C23C16/45544 ,  C23C16/452 ,  C23C16/45521 ,  C23C16/45536 ,  C23C16/45542 ,  C30B25/14 ,  C30B29/38 ,  H01J37/3244 ,  Y10T117/10

Abstract: An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.

Abstract translation: 一种用于衬底层沉积的改进的装置和方法，其中衬底层通过将反应物的顺序脉冲的载气输送到衬底表面而生长。 至少一种反应物包括激发的物质，例如自由基。 在具体实施方案中，本发明的装置在载体气流中提供反应物的顺序重复脉冲，以在基底表面反应。 反应物脉冲以足够的中间延迟时间递送，以使气相中相邻脉冲中的反应物之间的不希望的反应最小化，或者在衬底表面上产生不期望的不受控制的反应。