公开(公告)号：US10128731B2

公开(公告)日：2018-11-13

申请号：US14113428

申请日：2012-05-16

申请人： Ryota Hiura ,  Katsuhiro Hirata ,  Hiroshi Ishiguro ,  Yoshihiro Nakata

发明人： Ryota Hiura ,  Katsuhiro Hirata ,  Hiroshi Ishiguro ,  Yoshihiro Nakata

IPC分类号： H02K41/03 ,  H02K1/27 ,  H02K41/02

摘要： A linear vernier motor includes a stator and a mover. The stator extends in a first direction. The mover extends in the first direction and a pole interval is different from that of the stator. At least one of the stator and the mover includes: a plurality of permanent magnets arranged in the first direction and a plurality of yokes arranged in the first direction. Each of the plurality of yokes is arranged between adjacent permanent magnets. The plurality of permanent magnets is magnetized to the first direction and magnetization orientations of adjacent permanent magnets are opposite to each other.

公开(公告)号：US08716209B2

公开(公告)日：2014-05-06

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/306 ,  C11D11/00 ,  H01L21/3105

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US08580907B2

公开(公告)日：2013-11-12

申请号：US12648804

申请日：2009-12-29

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： C08G77/60

CPC分类号： H01L21/3121 ,  C08G77/60 ,  C09D183/16 ,  H01B3/46 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/4857 ,  H01L21/76807 ,  H01L21/76829 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/4676 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

摘要： An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1: where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

摘要翻译： 一种绝缘膜材料，其含有由以下结构式1表示的聚碳硅烷化合物：其中R 1可以在重复“n”次的单元中彼此相同或不同，并且各自表示C1-4烃或芳族烃; R2可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳香烃; n为5〜5000的整数。

公开(公告)号：US08449787B2

公开(公告)日：2013-05-28

申请号：US12035832

申请日：2008-02-22

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Koji Nozaki

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Koji Nozaki

IPC分类号： C03C15/00

CPC分类号： H01L21/67086 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/6708 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825

摘要： A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

摘要翻译： 一种湿式蚀刻方法，其包括在基板上形成绝缘膜，并且在使用蚀刻溶液湿式蚀刻绝缘膜期间，将绝缘膜照射激光。

公开(公告)号：US08390099B2

公开(公告)日：2013-03-05

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）所示结构的成分组合在一起：Si-CXHY-Si通式（1），其中y等于2×并且是偶数整数。

公开(公告)号：US20120325920A1

公开(公告)日：2012-12-27

申请号：US13608644

申请日：2012-09-10

申请人： Shirou Ozaki ,  Yoshihiro Nakata

发明人： Shirou Ozaki ,  Yoshihiro Nakata

IPC分类号： H01L21/768 ,  F24D1/00

CPC分类号： H01L21/67023 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/6704 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed.

摘要翻译： 形成互连结构的方法包括通过使用含氟蚀刻气体的干蚀刻工艺在绝缘膜中形成开口; 通过暴露于过热蒸汽来清洁开口的底表面和侧壁表面; 用阻挡金属膜覆盖开口的底表面和侧壁表面; 通过阻挡金属膜在绝缘膜上沉积导体膜以用导体膜填充开口; 通过化学机械抛光工艺研磨导体膜下面的导体膜和阻挡金属膜，直到绝缘膜的表面露出来，通过开口中的导体膜形成互连图案。

公开(公告)号：US20120181070A1

公开(公告)日：2012-07-19

申请号：US13431127

申请日：2012-03-27

申请人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

发明人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

IPC分类号： H05K1/09 ,  B05D3/00 ,  B05D5/12

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

摘要翻译： 在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。 此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。 此时，在铜互连表面的晶界部分中形成Cu-N-R键（R为有机基团）。 此后，通过进行碱性清洗除去保护膜。 即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。 随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行无电镀来形成阻挡层。

公开(公告)号：US07928536B2

公开(公告)日：2011-04-19

申请号：US11727001

申请日：2007-03-23

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76831

摘要： Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.

摘要翻译： 提供了具有高TDDB电阻和较小漏电流的布线层获得的技术，并且因此制造具有小功耗的高可靠性半导体器件的技术，其中形成界面粗糙度降低膜，其与 绝缘膜，并且与其另一侧表面上的布线接触，并且布线和界面粗糙度降低膜之间的界面粗糙度小于绝缘膜和界面粗糙度降低膜之间的界面粗糙度。

公开(公告)号：US07909701B2

公开(公告)日：2011-03-22

申请号：US12078198

申请日：2008-03-27

申请人： Keiji Ishikawa ,  Yasuo Tabuchi ,  Michiyasu Nosaka ,  Yoshihiro Nakata ,  Takayuki Suzuki

发明人： Keiji Ishikawa ,  Yasuo Tabuchi ,  Michiyasu Nosaka ,  Yoshihiro Nakata ,  Takayuki Suzuki

IPC分类号： F16D9/00

CPC分类号： F16H55/36 ,  F16D9/08

摘要： A power transmission apparatus comprises a pulley mounted rotatably on a casing of a rotary device, a hub coupled to the pulley by fitting between depressions and protrusions, a power shutoff member for preventing excessive torque between a rotary shaft and the hub, and an engaging device for engaging the hub and the pulley each other. The engaging device includes a first stepped portion formed radially on the outer periphery of the hub and a second stepped portion formed radially on the inner peripheral wall of a rim of the pulley in such a manner as to engage the first stepped portion in the axial direction.

摘要翻译： 动力传递装置包括可旋转地安装在旋转装置的壳体上的皮带轮，通过配合凹陷和突起而联接到滑轮的轮毂，用于防止旋转轴和轮毂之间的过大扭矩的动力切断构件和接合装置 用于将轮毂和滑轮彼此接合。 接合装置包括径向形成在轮毂的外周上的第一台阶部分和径向地形成在轮的轮缘的内周壁上的第二阶梯部分，以使得第一阶梯部分在轴向上接合 。

公开(公告)号：US07830012B2

公开(公告)日：2010-11-09

申请号：US12728480

申请日：2010-03-22

申请人： Shirou Ozaki ,  Yoshihiro Nakata

发明人： Shirou Ozaki ,  Yoshihiro Nakata

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/31695 ,  C08L83/16 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/76829 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1 and R2 is replaced by a substituent capable of absorbing exposure light. (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater).

摘要翻译： 提供一种用于形成曝光遮光膜的材料，其包括由以下结构式（1）表示的硅化合物和由以下结构式（2）表示的硅化合物中的至少一种，其中R 1 并且R 2被能够吸收曝光的取代基取代。 （其中R 1和R 2可以相同或不同，并且各自表示任选被取代的氢原子，烷基，烯基，环烷基和芳基中的任一个，n是2以上的整数）（其中， R 1，R 2和R 3可以相同或不同，R 1，R 2和R 3中的至少一个表示氢原子，其余表示任选被取代的烷基，烯基，环烷基和芳基中的任一个， n为2以上的整数）。