公开(公告)号：US20070119369A1

公开(公告)日：2007-05-31

申请号：US11642383

申请日：2006-12-19

申请人： Chung Lee ,  Atul Kumar ,  Chieh Chen

发明人： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC分类号： C23C16/00

CPC分类号： H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A method of producing a reactive intermediate having at least two free radicals from a precursor having a general formula of Xm—Ar—(CZ′Z″Y)n via a reactor made at least partially of a material M that is reactive with the precursor to produce at least one of MaYb and McXd is disclosed. The method comprises heating the reactor, introducing a flow of precursor into the reactor, contacting the precursor with the material M to form the reactive intermediate and at least one of MaYb and McXd, and reducing MaYb to M and a compound comprising Y and/or reducing McXd to M and a compound comprising X after forming the reactive intermediate and the at least one of MaYb and McXd.

摘要翻译： 一种制备具有至少两个自由基的反应性中间体的方法，所述反应性中间体具有通式X a -Ar-（CZ'Z“Y”）n前体的前体经由 至少部分由材料M制成的反应器，该反应器与前体反应以产生至少一个M a，B和M c， 公开了X 。 该方法包括加热反应器，将前体流引入反应器中，将前体与材料M接触以形成反应性中间体，以及至少一种M a 并且将M和M和包含Y和/或C的化合物还原成M和包含Y和/ 或者在形成反应性中间体之后还原M和包含X的化合物，以及至少一个M a > b＆lt;＆gt;和＆lt;＆lt; C＆gt;＆lt; d＆gt;

公开(公告)号：US07224039B1

公开(公告)日：2007-05-29

申请号：US10936743

申请日：2004-09-08

申请人： Gary E. McGuire ,  Olga Alexander Shenderova

发明人： Gary E. McGuire ,  Olga Alexander Shenderova

IPC分类号： H01L29/00

CPC分类号： H01L21/02118 ,  B82Y30/00 ,  C08J5/005 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3146

摘要： In accordance with certain embodiments consistent with the present invention, diamond nanoparticles are mixed with polymers. This mixture is expected to provide improved properties in interlayer dielectrics used in integrated circuit applications. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

摘要翻译： 根据与本发明一致的某些实施方案，将金刚石纳米颗粒与聚合物混合。 预期这种混合物可以在集成电路应用中使用的层间电介质中提供改进的性能。 该摘要不被认为是限制性的，因为其他实施例可能偏离本摘要中描述的特征。

公开(公告)号：US20070083016A1

公开(公告)日：2007-04-12

申请号：US11414351

申请日：2006-05-01

申请人： Thomas Dueber ,  John Summers

发明人： Thomas Dueber ,  John Summers

IPC分类号： C08L79/08 ,  B32B27/00

CPC分类号： H01L21/02118 ,  C08L63/00 ,  C08L79/08 ,  C08L2205/02 ,  G03F7/023 ,  G03F7/0387 ,  H01L21/02282 ,  H01L21/312 ,  H05K1/095 ,  H05K2201/0154 ,  Y10T428/31522 ,  C08L2666/20 ,  C08L2666/22

摘要： A photosensitive resin composition comprising a pre-imidized aromatic polyimide, which when coated on a silicon wafer, has a light transmittance at a wavelength of 365 nm of at least 1% and imparts low residual stress after cure. The composition can be patterned through I-line exposure followed by development with organic or alkaline solutions, and can be cured at relatively mild temperature to yield low-stress polyimide patterns. Electronic components having the polyimide patterns have high reliability.

摘要翻译： 一种包含预酰亚胺化的芳族聚酰亚胺的感光性树脂组合物，当涂覆在硅晶片上时，在365nm的波长下的透光率至少为1％，并且在固化后赋予较低的残留应力。 组合物可以通过I线曝光进行图案化，然后用有机或碱性溶液显影，并且可以在相对温和的温度下固化以产生低应力聚酰亚胺图案。 具有聚酰亚胺图案的电子元件具有高可靠性。

公开(公告)号：US07195936B2

公开(公告)日：2007-03-27

申请号：US10745520

申请日：2003-12-29

申请人： Tadashi Onishi ,  Manabu Hama ,  Minoru Honda ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita

发明人： Tadashi Onishi ,  Manabu Hama ,  Minoru Honda ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita

IPC分类号： H01L21/00

CPC分类号： H01L21/02351 ,  C23C16/56 ,  H01J37/317 ,  H01J2237/004 ,  H01J2237/3156 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/2636 ,  H01L21/312 ,  H01L21/67069 ,  H01L21/67253

摘要： In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

摘要翻译： 在薄膜处理方法和系统中，通过使用从多个电子束管照射的电子束到形成在待处理物体上的变化的膜的膜来调节膜厚度，其中输出功率或光束照射时间 电子束管根据厚度的分布单独控制。 在该方法和系统中，也可以去除装入被处理物体的膜中的电荷。

公开(公告)号：US07189654B2

公开(公告)日：2007-03-13

申请号：US10769852

申请日：2004-02-03

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/32139 ,  C23C16/45589 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/3342 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3246 ,  H01L51/0017 ,  H01L51/0022 ,  H01L51/5206 ,  H01L51/56

摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.

公开(公告)号：US20060281333A1

公开(公告)日：2006-12-14

申请号：US11431922

申请日：2006-05-11

申请人： Dong-Youn Shin ,  Bu Gon Shin

发明人： Dong-Youn Shin ,  Bu Gon Shin

IPC分类号： H01L21/20 ,  H01L23/58 ,  H01L21/31

CPC分类号： G03F7/70383 ,  C09D11/30 ,  H01L21/312 ,  H05K3/0032 ,  H05K3/048 ,  H05K3/125 ,  H05K3/1258 ,  H05K2203/013 ,  H05K2203/0568

摘要： Disclosed is a method for forming a pattern which comprises the steps of: (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of a first resolution or lower, on the sacrificial layer by using a first means, by which the sacrificial layer is directly processed to form a line; (c) filling the pattern grooves with a second material to a second resolution by using a second means, to form a pattern of the second material on the substrate. A substrate having a pre-pattern formed by the method is also disclosed. The method for forming a pattern provides a high-resolution pattern with little or no waste of the second material, thereby reducing production costs. The method includes use of the first means with a high resolution, such as focused energy beams of laser, combined with the second means with a low resolution, such as ink-jet, and provides a high-resolution pattern with high processing efficiency.

摘要翻译： 公开了一种用于形成图案的方法，包括以下步骤：（a）提供具有由第一材料制成的牺牲层的基板，部分地或全部地形成在基板上; （b）通过使用第一装置在牺牲层上形成没有第一材料并且具有第一分辨率或更低的线宽的图案凹槽，通过该第一装置直接处理牺牲层以形成线; （c）通过使用第二装置用第二材料将图案凹槽填充到第二分辨率，以在基底上形成第二材料的图案。 还公开了通过该方法形成的预制图案的基板。 形成图案的方法提供了高分辨率图案，几乎或不浪费第二材料，从而降低了生产成本。 该方法包括使用具有高分辨率的第一装置，例如与诸如喷墨的低分辨率与第二装置结合的激光的聚焦能量束，并且提供具有高处理效率的高分辨率图案。

公开(公告)号：US20060273434A1

公开(公告)日：2006-12-07

申请号：US11004291

申请日：2004-12-03

申请人： Kazutaka Shibata

发明人： Kazutaka Shibata

IPC分类号： H01L23/495

CPC分类号： H01L23/3114 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/56 ,  H01L21/561 ,  H01L23/562 ,  H01L2221/6834 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/0401

摘要： A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate and the second resin film is thinner than the semiconductor substrate.

摘要翻译： 半导体器件具有具有第一和第二表面的半导体衬底，形成在半导体衬底的第一表面上的第一树脂膜和形成在半导体衬底的第二表面上的第二树脂膜。 在半导体衬底的第一表面上形成突起电极或互连，第二树脂膜由能够吸收施加到半导体衬底的第二表面的冲击的低弹性树脂制成，而第二树脂膜更薄 比半导体衬底。

公开(公告)号：US07141188B2

公开(公告)日：2006-11-28

申请号：US10158513

申请日：2002-05-30

申请人： Bo Li ,  Nancy Iwamoto ,  Boris Korolev ,  Paul G. Apen ,  Kreisler Lau ,  John G. Sikonia ,  Ananth Naman ,  Amauel Gebrebrhan ,  Nassrin Sleiman ,  Ruslan Zherebin

发明人： Bo Li ,  Nancy Iwamoto ,  Boris Korolev ,  Paul G. Apen ,  Kreisler Lau ,  John G. Sikonia ,  Ananth Naman ,  Amauel Gebrebrhan ,  Nassrin Sleiman ,  Ruslan Zherebin

IPC分类号： H01L21/4763 ,  H01B3/22 ,  C08F8/00 ,  C08J9/02

CPC分类号： H01L21/31695 ,  C08G61/02 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3122 ,  H05K1/0313

摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

公开(公告)号：US20060261484A1

公开(公告)日：2006-11-23

申请号：US11492255

申请日：2006-07-25

申请人： Paul Farrar

发明人： Paul Farrar

IPC分类号： H01L23/52

CPC分类号： H01L21/02118 ,  C08L65/00 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/312 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/3171 ,  H01L23/5222 ,  H01L23/5329 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/11 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： Various apparatus and systems include foamed polynorbornene insulating material. The foamed polynorbornene material may provide electrical insulation between conductive layers of an integrated circuit device.

摘要翻译： 各种装置和系统包括泡沫聚降冰片烯绝缘材料。 泡沫聚降冰片烯材料可以在集成电路器件的导电层之间提供电绝缘。

公开(公告)号：US20060255432A1

公开(公告)日：2006-11-16

申请号：US11485078

申请日：2006-07-12

申请人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

发明人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/02118 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.