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    Laminated upper cladding structure for a light-emitting device
    81.
    发明授权
    Laminated upper cladding structure for a light-emitting device 失效
    用于发光器件的层压上包层结构

    公开(公告)号：US5400354A

    公开(公告)日：1995-03-21

    申请号：US193681

    申请日：1994-02-08

    申请人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    发明人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    IPC分类号： H01L21/338 ,  H01L21/74 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L33/30 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01L29/513 ,  H01L21/746 ,  H01L21/8252 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/66863 ,  H01L33/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2214 ,  H01S5/32391

    摘要： A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active region for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure includes a lower layer that is substantially aluminum-free to inhibit oxidation and includes an upper layer that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions and is selectively masked to prevent oxidation for second regions. The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AlInAs-InP laser. Other electronic devices, such as FETs, can be also formed using the top-down approach. Preferably, oxidation is limited to an upper III-V semiconductor layer by forming a lower III-V semiconductor layer that includes In and/or P. Lateral oxidation can also be realized using this approach.

    摘要翻译： 一种用于提供半导体发光器件的制造方法包括在半导体衬底上生长多个层，包括形成下覆盖层和用于产生光波的有源区。 在有源区上形成层叠包层结构。 层压包覆结构包括基本上不含铝的下层以抑制氧化，并且包括为了促进氧化而成为铝的上层。 叠层的上层被沿选定的第一区氧化，并被选择性地掩蔽以防止第二区的氧化。 第一区域的氧化在使得在第一区域的整个厚度上形成天然氧化物的条件下进行。 通过层压的上层的未氧化区域引导到用于操作发光器件的有源区的电流。 在优选实施例中，器件是InGaAsP-AlInAs-InP激光器。 也可以使用自顶向下的方法形成诸如FET的其它电子器件。 优选地，通过形成包括In和/或P的下III-V半导体层，氧化被限制在上III-V半导体层。也可以使用这种方法实现侧向氧化。

    Wavelength-converted semiconductor light emitting device
    84.
    发明授权
    Wavelength-converted semiconductor light emitting device 有权
    波长转换半导体发光器件

    公开(公告)号：US08748923B2

    公开(公告)日：2014-06-10

    申请号：US13045824

    申请日：2011-03-11

    申请人： Michael R. Krames ,  Gerd O. Mueller

    发明人： Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： H01L33/00

    CPC分类号： H04L45/7453 ,  H01L33/0079 ,  H01L33/505 ,  H01L2224/16225 ,  H04L47/2441

    摘要： A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.

    摘要翻译： 诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构，以有效地将来自发光区域的光提取到荧光体中。 磷光体可以是与半导体结构的表面直接接触的荧光体颗粒，或者结合到半导体结构的陶瓷荧光体，或可以生长半导体结构的薄的成核结构。 磷光体优选是高吸收性和高效率的。 当半导体结构将光发射到这种高效，高吸收性的荧光体中时，磷光体可以有效地从结构中提取光，从而减少了现有技术装置中存在的光学损耗。

    Common optical element for an array of phosphor converted light emitting devices
    85.
    发明授权
    Common optical element for an array of phosphor converted light emitting devices 有权
    用于荧光体转换发光器件的阵列的普通光学元件

    公开(公告)号：US08748912B2

    公开(公告)日：2014-06-10

    申请号：US13288291

    申请日：2011-11-03

    申请人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall, Jr. ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

    发明人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall, Jr. ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

    IPC分类号： H01L33/00

    CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

    Method and system for dicing substrates containing gallium and nitrogen material
    86.
    发明授权
    Method and system for dicing substrates containing gallium and nitrogen material 有权
    用于切割含有镓和氮材料的基材的方法和系统

    公开(公告)号：US08597967B1

    公开(公告)日：2013-12-03

    申请号：US13298617

    申请日：2011-11-17

    申请人： Michael R. Krames ,  Tai Margalith ,  Rafael Aldaz

    发明人： Michael R. Krames ,  Tai Margalith ,  Rafael Aldaz

    IPC分类号： H01L21/18 ,  H01L33/02 ,  H01L33/20

    CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32

    摘要： The present disclosure relates generally to semiconductor techniques. More specifically, embodiments of the present disclosure provide methods for efficiently dicing substrates containing gallium and nitrogen material. Additionally the present disclosure provide techniques resulting in a optical device comprising a substrate having three or more corners, where at least one of the corners is defined by a dislocation bundle characterized by a diameter of less than 100 microns, the gallium and nitrogen containing substrate having a predefined portion free from dislocation bundle centers, an active region containing one or more active layers, the active region being positioned within the predefined region; and a conductive region formed within the predefined region.

    摘要翻译： 本公开一般涉及半导体技术。 更具体地，本公开的实施例提供了用于有效地切割含有镓和氮材料的衬底的方法。 另外，本公开提供了一种技术，其导致包括具有三个或更多个拐角的基底的光学装置，其中至少一个拐角由位于距离小于100微米直径的位错束限定，含镓和氮的基底具有 没有位错束中心的预定部分，包含一个或多个有源层的有源区域，该有源区域位于该预定区域内; 以及形成在预定区域内的导电区域。

    Package-integrated thin film LED
    87.
    发明授权
    Package-integrated thin film LED 有权

    公开(公告)号：US08455913B2

    公开(公告)日：2013-06-04

    申请号：US12969709

    申请日：2010-12-16

    申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

    发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

    IPC分类号： H01L33/00

    CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

    摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

    Substrate for growing a III-V light emitting device
    89.
    发明授权
    Substrate for growing a III-V light emitting device 有权
    用于生长III-V发光器件的衬底

    公开(公告)号：US08334155B2

    公开(公告)日：2012-12-18

    申请号：US11237164

    申请日：2005-09-27

    申请人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

    发明人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

    摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

    摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

    RELAXATION OF STRAINED LAYERS
    90.
    发明申请
    RELAXATION OF STRAINED LAYERS 有权
    应变层的松弛

    公开(公告)号：US20120214291A1

    公开(公告)日：2012-08-23

    申请号：US13458587

    申请日：2012-04-27

    申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    IPC分类号： H01L21/762

    CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

    摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

    摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。