公开(公告)号：US20120080690A1

公开(公告)日：2012-04-05

申请号：US12894344

申请日：2010-09-30

申请人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/24 ,  H01L21/30 ,  H01L29/02 ,  H01L21/20

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

摘要： According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

摘要翻译： 根据实施例，复合晶片包括具有石墨芯和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US08102028B2

公开(公告)日：2012-01-24

申请号：US12543995

申请日：2009-08-19

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

IPC分类号： H01L23/00

CPC分类号： H01L21/78 ,  H01L29/0692 ,  H01L29/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region.

摘要翻译： 具有半导体主体的半导体部件包括活性区域和围绕有源区域的边缘区域。 边缘区域从有源区域延伸到半导体本体的边缘。 在边缘区域形成由多孔材料构成的区域。

公开(公告)号：US07923772B2

公开(公告)日：2011-04-12

申请号：US12112710

申请日：2008-04-30

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7397

摘要： A semiconductor device with a semiconductor body and to a method for producing it. In one embodiment, the semiconductor body has first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones. The semiconductor body has a second electrode which contacts a second highly doped semiconductor zone. Between the second semiconductor zone and the body zones, a drift zone is arranged. Control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device are arranged on the semiconductor body. The body zones have minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone.

摘要翻译： 具有半导体本体的半导体器件及其制造方法。 在一个实施例中，半导体本体具有接触第一高度掺杂半导体区域和围绕第一半导体区域的互补导电体区域的第一电极。 半导体本体具有接触第二高掺杂半导体区的第二电极。 在第二半导体区域和体区之间布置漂移区。 通过栅极氧化物与半导体本体绝缘并作用于体区的用于控制半导体器件的控制电极被布置在半导体本体上。 身体区域具有少数电荷载体注射器区域，其布置在第一半导体区域和漂移区域之间，与身体区域互补导电。

公开(公告)号：US07777274B2

公开(公告)日：2010-08-17

申请号：US11521075

申请日：2006-09-14

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7397 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/872

摘要： A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.

摘要翻译： 功率半导体部件包括半导体本体和场电极。 半导体本体具有第一导电类型的漂移区和限定它们之间的连接的另外的元件。 结点被配置为当反向电压施加到结点时使空间电荷区传播。 场电极被布置成与漂移区相邻，并且通过至少介电层与半导体本体绝缘。 电介质层具有第一部分和第二部分，第一部分布置成更靠近结并且具有比第二部分更高的介电常数。

公开(公告)号：US07709887B2

公开(公告)日：2010-05-04

申请号：US11604984

申请日：2006-11-28

申请人： Frank Hille ,  Frank Umbach ,  Anton Mauder ,  Hans-Joachim Schulze ,  Thomas Laska ,  Manfred Pfaffenlehner

发明人： Frank Hille ,  Frank Umbach ,  Anton Mauder ,  Hans-Joachim Schulze ,  Thomas Laska ,  Manfred Pfaffenlehner

IPC分类号： H01L29/76

CPC分类号： H01L29/7397 ,  H01L21/263 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66348

摘要： A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

摘要翻译： 公开了制造半导体部件的半导体部件及其制造方法。 在一个实施例中，半导体部件包括第一导电类型的漂移区，第二导电类型的体区和延伸到体区的沟槽。 第一导电类型的半导体区域与漂移区域和体区域接触并且布置成与沟槽一定距离。

公开(公告)号：US20070152268A1

公开(公告)日：2007-07-05

申请号：US11604984

申请日：2006-11-28

申请人： Frank Hille ,  Frank Umbach ,  Anton Mauder ,  Hans-Joachim Schulze ,  Thomas Laska ,  Manfred Pfaffenlehner

发明人： Frank Hille ,  Frank Umbach ,  Anton Mauder ,  Hans-Joachim Schulze ,  Thomas Laska ,  Manfred Pfaffenlehner

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/7397 ,  H01L21/263 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66348

摘要： A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

摘要翻译： 公开了制造半导体部件的半导体部件及其制造方法。 在一个实施例中，半导体部件包括第一导电类型的漂移区，第二导电类型的体区和延伸到体区的沟槽。 第一导电类型的半导体区域与漂移区域和体区域接触并且布置成与沟槽一定距离。

公开(公告)号：US20070108513A1

公开(公告)日：2007-05-17

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L31/00

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US20060081923A1

公开(公告)日：2006-04-20

申请号：US11241866

申请日：2005-09-30

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/76

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

公开(公告)号：US10211057B2

公开(公告)日：2019-02-19

申请号：US13197903

申请日：2011-08-04

申请人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

发明人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

IPC分类号： H01L21/26 ,  H01L29/08 ,  H01L29/78 ,  H01L21/265 ,  H01L29/739 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/165 ,  H01L29/167 ,  H01L29/32

摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

公开(公告)号：US09219144B2

公开(公告)日：2015-12-22

申请号：US13571455

申请日：2012-08-10

申请人： Anton Mauder ,  Reinhard Ploss ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Reinhard Ploss ,  Hans-Joachim Schulze

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L23/36 ,  H01L29/417 ,  H01L29/66 ,  H01L23/00 ,  H01L21/74 ,  H01L21/225 ,  H01L21/324 ,  H01L29/45 ,  H01L29/08

CPC分类号： H01L29/4236 ,  H01L21/2225 ,  H01L21/2251 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/28079 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/743 ,  H01L23/36 ,  H01L24/05 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/1079 ,  H01L29/167 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4958 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827 ,  H01L2224/05009 ,  H01L2224/05078 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.

摘要翻译： 半导体器件包括半导体衬底。 第一沟槽从第一侧延伸进入或穿过半导体衬底。 半导体层在第一侧邻接半导体衬底。 半导体层在第一侧覆盖第一沟槽。 半导体器件还包括在与第一侧相对的半导体衬底的第二侧的接触。