公开(公告)号：US07250378B2

公开(公告)日：2007-07-31

申请号：US11404541

申请日：2006-04-14

申请人： Garo J. Derderian ,  Chris W. Hill

发明人： Garo J. Derderian ,  Chris W. Hill

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/0272 ,  C23C16/402 ,  H01L21/02145 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/76227

摘要： This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing an aluminum containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum comprising layer over the substrate. An alkoxysilanol is flowed to the substrate comprising the aluminum comprising layer within the chamber effective to deposit a silicon dioxide comprising layer over the substrate. At least one halogen is provided within the chamber during at least one of the aluminum containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide comprising layer over the substrate than would otherwise occur under identical conditions but for providing the halogen. Other implementations are contemplated.

公开(公告)号：US07176118B2

公开(公告)日：2007-02-13

申请号：US10810779

申请日：2004-03-25

申请人： Cem Basceri ,  Garo J. Derderian

发明人： Cem Basceri ,  Garo J. Derderian

IPC分类号： H01L21/4763

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/28061 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659 ,  Y10S977/859

摘要： The invention includes methods of forming regions of differing composition over a substrate. A first material having a pattern of at least one substantially amorphous region and at least one substantially crystalline region is provided over the substrate. The at least one substantially amorphous region of the first material is replaced with a second material, while the at least one substantially crystalline region is not replaced. The invention also includes a circuit construction comprising an electrically conductive material extending within openings in a substantially crystalline electrically insulative material, and in which the electrically conductive material corresponds to quantum dots.

摘要翻译： 本发明包括在衬底上形成不同组成的区域的方法。 具有至少一个基本非晶区域和至少一个基本上结晶区域的图案的第一材料设置在该基板上。 第一材料的至少一个基本无定形区域被第二材料替代，而至少一个基本上结晶的区域不被替换。 本发明还包括电路结构，其包括在基本上结晶的电绝缘材料的开口内延伸的导电材料，并且其中导电材料对应于量子点。

公开(公告)号：US07153751B2

公开(公告)日：2006-12-26

申请号：US10464231

申请日：2003-06-17

申请人： Cem Basceri ,  Garo J. Derderian

发明人： Cem Basceri ,  Garo J. Derderian

IPC分类号： H01L21/20

CPC分类号： H01L21/7687 ,  H01L21/76877 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75 ,  Y10S438/964

摘要： The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

摘要翻译： 本发明包括形成半导体结构的方法。 提供半导体衬底，并且形成由半导体衬底支撑的导电节点。 第一导电材料形成在导电节点上并成形为容器。 容器具有在其中延伸的开口和靠近开口的上表面。 容器开口至少部分地填充有绝缘材料。 第二导电材料形成在至少部分填充的容器开口上并且物理地抵靠容器的上表面。 本发明还包括半导体结构。

公开(公告)号：US07118783B2

公开(公告)日：2006-10-10

申请号：US10183250

申请日：2002-06-26

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

IPC分类号： C23C16/02

CPC分类号： C23C16/4481

摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.

摘要翻译： 用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。 本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。 在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。 这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。 其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。

公开(公告)号：US07105441B2

公开(公告)日：2006-09-12

申请号：US10245673

申请日：2002-09-17

申请人： Garo J. Derderian ,  Gordon Morrison

发明人： Garo J. Derderian ,  Gordon Morrison

IPC分类号： C23C16/34

CPC分类号： C23C16/4557 ,  C23C16/34 ,  C23C16/452 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

公开(公告)号：US07087525B2

公开(公告)日：2006-08-08

申请号：US10884044

申请日：2004-07-02

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： H01L21/44

CPC分类号： C23C18/1283 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/125 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/28556 ,  H01L21/31 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/318

摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture comprises a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包含超临界流体中期望材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。

公开(公告)号：US07029985B2

公开(公告)日：2006-04-18

申请号：US10659435

申请日：2003-09-11

申请人： Cem Basceri ,  Garo J. Derderian

发明人： Cem Basceri ,  Garo J. Derderian

IPC分类号： H01L21/00

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/84 ,  H01L28/91 ,  H01L29/94

摘要： An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or anneal process. A dielectric layer of aluminum oxide (Al2O3), or a composite stack of interleaved layers of aluminum oxide and other metal oxide dielectric materials, is fabricated over the hemispherical grained polysilicon layer and after the optional nitridization or anneal process. The dielectric layer of aluminum oxide (Al2O3) or the aluminum oxide composite stack may be optionally subjected to a post-deposition treatment to further increase the capacitance and decrease the leakage current. A metal nitride upper electrode is formed over the dielectric layer or the composite stack by a deposition technique or by atomic layer deposition.

摘要翻译： 公开了具有低泄漏和高电容的MIS电容器。 形成半球状晶粒多晶硅层（HSG）作为下电极。 在电介质形成之前，半球状晶粒多晶硅层可以任选地进行氮化或退火工艺。 在半球形颗粒上制造氧化铝（Al 2 O 3 3）的介电层或氧化铝和其它金属氧化物电介质材料的交错层的复合叠层 多晶硅层和可选的氮化或退火工艺后。 氧化铝（Al 2 O 3 3）的电介质层或氧化铝复合叠层可以任选地进行后沉积处理以进一步增加电容并减小 漏电流。 通过沉积技术或通过原子层沉积在电介质层或复合叠层上形成金属氮化物上电极。

公开(公告)号：US07015113B2

公开(公告)日：2006-03-21

申请号：US10817029

申请日：2004-04-01

申请人： Garo J. Derderian ,  H. Montgomery Manning

发明人： Garo J. Derderian ,  H. Montgomery Manning

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate. A trench isolation material is formed within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench. The trench isolation material is polished at least to an outermost surface of the at least one of tungsten, titanium nitride and amorphous carbon of the masking material. The at least one of tungsten, titanium nitride and amorphous carbon is/are etched from the substrate. Other implementations and aspects are contemplated.

公开(公告)号：US06967154B2

公开(公告)日：2005-11-22

申请号：US10229338

申请日：2002-08-26

申请人： Shuang Meng ,  Garo J. Derderian ,  Gurtej Singh Sandhu

发明人： Shuang Meng ,  Garo J. Derderian ,  Gurtej Singh Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/515 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/768 ,  H01L29/51 ,  H01L21/4763

CPC分类号： H01L29/511 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3141 ,  H01L21/76843 ,  H01L28/75 ,  H01L28/84 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF5 and NH3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

摘要翻译： 描述了增加原子层沉积的方法。 在一个实施例中，增强是使用等离子体。 等离子体在将第二前体流入室之前开始。 第二前体与先前的前体反应以在基底上沉积一层。 在一个实施方案中，该层包括来自第一和第二前体中的每一个的至少一种元素。 在一个实施例中，层是TaN。 在一个实施方案中，前体是TaF 5 N和NH 3。 在一个实施例中，等离子体在第一前体的脉冲和第二前体的脉冲之间的吹扫气流期间开始。 在一个实施例中，增强是热能。 在一个实施例中，热能大于ALD（> 300摄氏度）通常接受的热能。 该增强有助于前体在基底上沉积一层的反应。

公开(公告)号：US06949827B2

公开(公告)日：2005-09-27

申请号：US10874369

申请日：2004-06-24

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： C23C16/30 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/365 ,  H01L21/768 ,  H01L27/10 ,  H01L29/51 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

摘要翻译： 使用原子层沉积（ALD）工艺参数在半导体器件中在衬底上沉积薄膜的方法将衬底暴露于至少一种粘附材料，其量足以使材料吸附到衬底上，从而形成起始层 。 引发层呈现至少一个第一反应性部分，然后使用原子层沉积条件与至少一种第一反应材料进行化学反应以形成第二反应性部分。 然后在足以在起始层上形成反应层的工艺条件下，将第二反应性部分与至少一种第二反应材料化学反应。 可以重复该过程以在起始层上形成连续的反应层。 构成起始层的粘合材料优选为原子层沉积参数基本上不劣化的材料。 起始层与一个或多个反应层一起构成最终的膜。