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99 条记录 (耗时 0.032 秒)

    Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
    81.
    发明申请
    Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry 失效
    在制造集成电路中沉积含二氧化硅的层的方法

    公开(公告)号：US20060189158A1

    公开(公告)日：2006-08-24

    申请号：US11404542

    申请日：2006-04-14

    申请人： Garo Derderian ,  Chris Hill

    发明人： Garo Derderian ,  Chris Hill

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02164 ,  C23C16/0272 ,  C23C16/402 ,  H01L21/02145 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/76227

    摘要： This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing an aluminum containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum comprising layer over the substrate. An alkoxysilanol is flowed to the substrate comprising the aluminum comprising layer within the chamber effective to deposit a silicon dioxide comprising layer over the substrate. At least one halogen is provided within the chamber during at least one of the aluminum containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide comprising layer over the substrate than would otherwise occur under identical conditions but for providing the halogen. Other implementations are contemplated.

    摘要翻译： 本发明包括在制造集成电路中沉积含二氧化硅的层的方法以及在集成电路的制造中形成沟槽隔离的方法。 在一个实施方案中，在集成电路的制造中沉积含二氧化硅的层的方法包括将含有铝的有机前体流动到含有半导体衬底的室，该半导体衬底有效地在衬底上沉积含铝层。 烷氧基硅烷流到包含室内的包含铝的基材的基材中，有效地将二氧化硅包含层沉积在基材上。 在含铝的有机前驱体和烷氧基硅烷中的至少一种中，至少有一个卤素在有效地降低衬底上沉积二氧化硅层的条件下流动的条件下流动，这与在相同条件下将会发生的情况相反，但是 用于提供卤素。 考虑其他实现。

    Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
    83.
    发明申请
    Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices 审中-公开
    用于制造微电子器件的化学反应性蒸汽的设备和方法

    公开(公告)号：US20050249873A1

    公开(公告)日：2005-11-10

    申请号：US10839316

    申请日：2004-05-05

    申请人： Demetrius Sarigiannis ,  Garo Derderian

    发明人： Demetrius Sarigiannis ,  Garo Derderian

    IPC分类号： C23C16/00 ,  C23C16/448

    CPC分类号： C23C16/4481

    摘要： Embodiments of the invention are directed to apparatuses and methods for producing chemical reactive vapors for vapor deposition processes, including chemical vapor deposition or atomic layer deposition processes used in manufacturing microfeature workpieces. In one embodiment, a gas is passed over a surface of a material in an ampoule to form a vapor in a vapor cell within the ampoule. The vapor cell has a volume, and the volume of the vapor cell is maintained at least approximately constant as the material is vaporized. In another embodiment, a gas is passed through an inlet of an ampoule and onto a surface of a material to form a vapor, and a distance between the inlet and the surface of the material is maintained approximately constant as the material is vaporized. In still other embodiments, the vapor produced by the foregoing embodiments is used in a vapor deposition process.

    摘要翻译： 本发明的实施方案涉及用于生产用于气相沉积工艺的化学反应蒸气的装置和方法，包括用于制造微型工件的化学气相沉积或原子层沉积工艺。 在一个实施方案中，气体通过安瓿中的材料的表面，以在安瓿内的蒸汽池中形成蒸汽。 蒸汽池具有体积，并且当材料蒸发时，蒸气室的体积保持至少近似恒定。 在另一个实施方案中，气体通过安瓿的入口并进入材料的表面以形成蒸气，并且当材料蒸发时，材料的入口和表面之间的距离保持大致恒定。 在其它实施方案中，由蒸气沉积工艺使用由前述实施方案产生的蒸汽。

    Methods of forming trench isolation regions
    84.
    发明申请
    Methods of forming trench isolation regions 有权
    形成沟槽隔离区的方法

    公开(公告)号：US20050227450A1

    公开(公告)日：2005-10-13

    申请号：US10817029

    申请日：2004-04-01

    申请人： Garo Derderian ,  H. Manning

    发明人： Garo Derderian ,  H. Manning

    IPC分类号： H01L21/308 ,  H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/76224

    摘要： The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate. A trench isolation material is formed within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench. The trench isolation material is polished at least to an outermost surface of the at least one of tungsten, titanium nitride and amorphous carbon of the masking material. The at least one of tungsten, titanium nitride and amorphous carbon is/are etched from the substrate. Other implementations and aspects are contemplated.

    摘要翻译： 本发明包括形成沟槽隔离区域的方法。 在一个实施方式中，在半导体衬底上形成掩模材料。 掩模材料包括钨，氮化钛和无定形碳中的至少一种。 通过掩模材料和半导体衬底形成有效地在半导体衬底的半导体材料内形成隔离沟槽的开口。 沟槽隔离材料形成在隔离沟槽内并且在沟槽外部的掩模材料之上，有效地覆盖隔离沟槽。 沟槽隔离材料至少抛光到掩模材料的钨，氮化钛和无定形碳中的至少一种的最外表面。 从衬底蚀刻钨，氮化钛和无定形碳中的至少一种。 考虑其他实现和方面。

    Preheating of chemical vapor deposition precursors
    87.
    发明申请
    Preheating of chemical vapor deposition precursors 审中-公开
    化学气相沉积前体预热

    公开(公告)号：US20050158997A1

    公开(公告)日：2005-07-21

    申请号：US11073798

    申请日：2005-03-07

    申请人： Garo Derderian ,  Gordon Morrison

    发明人： Garo Derderian ,  Gordon Morrison

    IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/52 ,  H01L21/44

    CPC分类号： C23C16/4557 ,  C23C16/34 ,  C23C16/452 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

    摘要： Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

    摘要翻译： 化学气相沉积系统包括在使气体反应以在基底上形成材料层之前预热反应气体的元件，其向装置和系统提供基本上没有来自反应过程的残余化合物的沉积层。 在引入反应室之前加热反应物气体可以用于改善所得沉积层的物理特性，以改善下面的基底的物理特性和/或改善可用于后续处理的热量预算。 一个实例包括使用含有四氯化钛前体和氨前体的反​​应气体形成基本上不含氯化铵的氮化钛层。

    Insitu post atomic layer deposition destruction of active species
    88.
    发明申请
    Insitu post atomic layer deposition destruction of active species 失效
    原子层沉积破坏活性物种

    公开(公告)号：US20050150460A1

    公开(公告)日：2005-07-14

    申请号：US11009425

    申请日：2004-12-10

    申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/285 ,  H01L21/316 ,  C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/4407 ,  C23C16/45544 ,  C23C16/46 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/31616 ,  Y10S438/903 ,  Y10S438/905 ,  Y10S438/913 ,  Y10S438/935

    摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

    摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。

    Methods for use in forming a capacitor and structures resulting from same
    90.
    发明授权
    Methods for use in forming a capacitor and structures resulting from same 失效
    用于形成电容器和由其产生的结构的方法

    公开(公告)号：US06890814B2

    公开(公告)日：2005-05-10

    申请号：US10784563

    申请日：2004-02-23

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8242 ,  H01L23/58

    CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

    摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。