公开(公告)号：US20170050422A1

公开(公告)日：2017-02-23

申请号：US14828557

申请日：2015-08-18

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: B32B37/00 ,  C01B31/04 ,  B05D1/32

CPC classification number: B32B37/025 ,  B05D1/322 ,  B32B38/10 ,  B32B2307/202 ,  B32B2313/04 ,  B32B2457/00 ,  C01B32/194 ,  H01B1/04

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract translation: 根据各种实施例，用于处理载体的方法可以包括：在载体上形成层结构，所述层结构包括支撑层和支撑层上的二维层; 其中所述层结构具有暴露所述载体的一部分的至少一个开口; 形成辅助层结构，其中所述辅助层结构至少部分地覆盖所述层结构并且至少部分地填充所述至少一个开口; 并移除层结构的支撑层。

公开(公告)号：US20170018614A1

公开(公告)日：2017-01-19

申请号：US15210106

申请日：2016-07-14

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Guenther Ruhl ,  Hans-Joachim Schulze

IPC: H01L29/16 ,  H01L29/08 ,  H01L21/324 ,  H01L23/535 ,  H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417

CPC classification number: H01L29/1608 ,  H01L21/02444 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/083 ,  H01L29/1606 ,  H01L29/36 ,  H01L29/413 ,  H01L29/41725

Abstract: A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.

Abstract translation: 一种形成半导体器件的方法包括在半导体衬底的表面上形成至少一个石墨烯层。 该方法还包括在至少一个石墨烯层上形成碳化硅层。

公开(公告)号：US09515243B2

公开(公告)日：2016-12-06

申请号：US14579154

申请日：2014-12-22

Applicant: Infineon Technologies AG

Inventor： Christian Kegler ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Guenther Ruhl ,  Joachim Mahler

IPC: H01L35/04 ,  H01L35/18 ,  H01L35/14 ,  G01K7/16

CPC classification number: G01K7/16 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L35/04 ,  H01L35/14 ,  H01L35/18

Abstract: Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

Abstract translation: 提供温度传感器装置和相应的方法。 温度传感器可以包括在温度范围内基本上不导电的第一层和在温度范围内具有变化的电阻的第二层。

公开(公告)号：US09461120B2

公开(公告)日：2016-10-04

申请号：US14633159

申请日：2015-02-27

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/24 ,  H01L29/402 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66045 ,  H01L29/778

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer.

Abstract translation: 根据各种实施例，电子设备可以包括：包括二维材料的层; 在所述层的第一侧的电介质结构，其中所述电介质结构包括第一接触区域和第二接触区域，所述第一接触区域限定所述层的第一接触区域和所述第二接触区域限定所述第二接触区域的第二接触区域 并且所述第一接触区域和所述第二接触区域进一步限定所述层的所述第一接触区域和所述第二接触区域之间的所述层的器件区域; 第一电极和第二电极，设置在与第一侧相对的第二侧上，其中第一电极与层的第一接触区域直接物理接触，并且其中第二电极与第一电极直接物理接触 所述层的第二接触区域，其中所述电介质结构的所述第一接触区域和所述第二接触区域被配置为分别调节所述第二接触区域和所述第二接触区域中的所述二维材料的电特性 使得层的第一接触区域和第二接触区域中的二维材料的电特性不同于层的器件区域中的二维材料的电特性。

公开(公告)号：US20160254355A1

公开(公告)日：2016-09-01

申请号：US14633159

申请日：2015-02-27

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/24 ,  H01L29/402 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66045 ,  H01L29/778

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer.

Abstract translation: 根据各种实施例，电子设备可以包括：包括二维材料的层; 在所述层的第一侧的电介质结构，其中所述电介质结构包括第一接触区域和第二接触区域，所述第一接触区域限定所述层的第一接触区域和所述第二接触区域限定所述第二接触区域的第二接触区域 并且所述第一接触区域和所述第二接触区域进一步限定所述层的所述第一接触区域和所述第二接触区域之间的所述层的器件区域; 第一电极和第二电极，设置在与第一侧相对的第二侧上，其中第一电极与层的第一接触区域直接物理接触，并且其中第二电极与第一电极直接物理接触 所述层的第二接触区域，其中所述电介质结构的所述第一接触区域和所述第二接触区域被配置为分别调节所述第二接触区域和所述第二接触区域中的所述二维材料的电特性 使得层的第一接触区域和第二接触区域中的二维材料的电特性不同于层的器件区域中的二维材料的电特性。

公开(公告)号：US20150287788A1

公开(公告)日：2015-10-08

申请号：US14745428

申请日：2015-06-20

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Guenther Ruhl ,  Horst Theuss ,  Irmgard Escher-Poeppel

IPC: H01L29/16 ,  H01L23/00 ,  H01L23/495 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L29/1606 ,  G01N27/127 ,  G01N33/0059 ,  H01L21/561 ,  H01L21/568 ,  H01L23/28 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract translation: 在基板上产生石​​墨烯层。 在石墨烯层上沉积塑料材料以至少部分地覆盖石墨烯层。 将基板分成至少两个基片。

公开(公告)号：US09070615B2

公开(公告)日：2015-06-30

申请号：US14289512

申请日：2014-05-28

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Guenther Ruhl ,  Horst Theuss ,  Irmgard Escher-Poeppel

IPC: H01L29/06 ,  H01L29/16 ,  G01N27/12 ,  H01L23/31 ,  H01L21/56 ,  H01L23/28 ,  H01L23/29 ,  H01L23/00 ,  G01N33/00

CPC classification number: H01L29/1606 ,  G01N27/127 ,  G01N33/0059 ,  H01L21/561 ,  H01L21/568 ,  H01L23/28 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract translation: 在基板上产生石​​墨烯层。 在石墨烯层上沉积塑料材料以至少部分地覆盖石墨烯层。 将基板分成至少两个基片。

公开(公告)号：US20150004451A1

公开(公告)日：2015-01-01

申请号：US14311489

申请日：2014-06-23

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Jochen Dangelmaier ,  Manfred Fries ,  Juergen Hoegerl ,  Georg Meyer-Berg ,  Thomas Mueller ,  Guenther Ruhl ,  Horst Theuss ,  Mathias Vaupel

IPC: G01R31/36 ,  H01M10/48

CPC classification number: H01M10/48 ,  G01R31/3689 ,  H01M6/505 ,  H01M10/488

Abstract: An apparatus for determining a state of a rechargeable battery or of a battery has a sensor device and an evaluation device. The sensor device brings about an interaction between an optical signal and a part of the rechargeable battery or of the battery, which part indicates optically acquirable information about a state of the rechargeable battery or of the battery, and detects an optical signal caused by the interaction. The sensor device furthermore provides a detection signal having information about the detected optical signal. The evaluation device determines information about a state of the rechargeable battery or of the battery on the basis of the information of the detection signal. Furthermore, the evaluation device provides a state signal having the information about the determined state.

Abstract translation: 用于确定可再充电电池或电池的状态的装置具有传感器装置和评估装置。 该传感器装置引起光信号与可再充电电池或电池的一部分之间的相互作用，该部分指示关于可再充电电池或电池的状态的光学上可获取的信息，并检测由相互作用引起的光信号 。 传感器装置还提供具有关于检测到的光信号的信息的检测信号。 评估装置基于检测信号的信息来确定关于可再充电电池或电池的状态的信息。 此外，评估装置提供具有关于所确定的状态的信息的状态信号。

公开(公告)号：US20140270271A1

公开(公告)日：2014-09-18

申请号：US13830111

申请日：2013-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Guenther Ruhl

IPC: H04R23/00 ,  B81C1/00 ,  H04R31/00 ,  B81B3/00

CPC classification number: H04R23/00 ,  B81B3/0018 ,  B81C1/00158 ,  H04R7/04 ,  H04R19/005 ,  H04R31/00 ,  H04R31/006 ,  H04R2307/023

Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.

Abstract translation: MEMS声换能器包括具有穿过其中的腔的衬底，以及导电背板单元，其包括在衬底空腔上延伸的多个导电多孔背板部分。 布置在相邻的导电多孔背板部分之间的背板单元上的电介质隔离物和一个或多个石墨烯膜由介电间隔物支撑并在导电多孔背板部分上延伸。

公开(公告)号：US20140070232A1

公开(公告)日：2014-03-13

申请号：US13776796

申请日：2013-02-26

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC: H01L21/762 ,  H01L29/16

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract translation: 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。