OPTICAL FILM CUTTING METHOD AND OPTICAL FILM
    2.
    发明申请
    OPTICAL FILM CUTTING METHOD AND OPTICAL FILM 审中-公开
    光学薄膜切割方法和光学薄膜

    公开(公告)号:US20100028606A1

    公开(公告)日:2010-02-04

    申请号:US12442219

    申请日:2007-09-11

    IPC分类号: B32B3/00 B29D11/00

    摘要: This invention relates to an optical film cutting method, which includes: a laser beam generation step of performing a waveform shaping of a laser beam to generate a laser beam having a rectangular waveform, and a cutting step of irradiating an optical film with the laser beam obtained by the laser beam generation step and having a rectangular waveform to thereby cut the optical film; as well as to an optical film that is cut by the cutting method and having a size of a raised part generated on a cutting surface thereof of 30 μm or less. According to the optical film cutting method of this invention, it is possible to provide an optical film cutting method for cutting an optical film such as a polarizing film by not using a gaussian beam but using a laser beam of which a waveform is shaped into a rectangular waveform, which is capable of maintaining a raised part size as small as possible in a cutting surface of the optical film and preventing generation of bonding defect and optical defect when the optical film is incorporated into various optical panels.

    摘要翻译: 本发明涉及一种光学膜切割方法,该方法包括:激光束产生步骤,执行激光束的波形整形以产生具有矩形波形的激光束;以及切割步骤,用激光束照射光学膜 通过激光束产生步骤获得并具有矩形波形从而切割光学膜; 以及通过切割方法切割并且具有在其切割表面上产生的凸起部分的尺寸为30μm或更小的光学膜。 根据本发明的光学膜切割方法,可以提供一种用于通过不使用高斯光束来切割诸如偏振膜的光学膜的光学膜切割方法,但是使用其波形被形成为 矩形波形,其能够在光学膜的切割表面中保持尽可能小的凸起部分尺寸,并且当将光学膜结合到各种光学面板中时防止粘合缺陷和光学缺陷的产生。

    Process for producing three-dimensional polyimide optical waveguide
    6.
    发明授权
    Process for producing three-dimensional polyimide optical waveguide 失效
    制造三维聚酰亚胺光波导的方法

    公开(公告)号:US07085469B2

    公开(公告)日:2006-08-01

    申请号:US10700635

    申请日:2003-11-05

    摘要: This invention provides a process for producing a three-dimensional polyimide optical waveguide, which comprises: (I) irradiating a polyamic acid film with a laser beam while converging the laser beam at an inside portion of the film and relatively moving the light convergence point, the polyamic acid film containing: (a) a polyamic acid obtained from a tetracarboxylic dianhydride and a diamine; and (b) per 100 parts of the polyamic acid, from 0.5 part by weight to less than 10 parts by weight of a specific 1,4-dihydropyridine derivative represented by formula (I): and then, (II) heating the polyamic acid film to imidize the polyamic acid, thereby obtaining an optical waveguide having a continuous core region where the refraction index has been changed, in the thus formed polyimide film.

    摘要翻译: 本发明提供一种三维聚酰亚胺光波导的制造方法,其特征在于,包括:(I)在激光束在所述膜的内部会聚并相对移动所述聚光点的同时,用激光束照射聚酰胺酸膜, 所述聚酰胺酸膜含有:(a)由四羧酸二酐和二胺获得的聚酰胺酸; 和(b)每100份聚酰胺酸,0.5重量份至小于10重量份由式(I)表示的特定的1,4-二氢吡啶衍生物:然后,(II)加热聚酰胺酸 膜以酰亚胺化聚酰胺酸,从而获得在如此形成的聚酰亚胺膜中具有折射率已经改变的连续纤芯区域的光波导。

    Multilayer probe for measuring electrical characteristics
    7.
    发明授权
    Multilayer probe for measuring electrical characteristics 失效
    用于测量电气特性的多层探头

    公开(公告)号:US5977783A

    公开(公告)日:1999-11-02

    申请号:US817944

    申请日:1997-04-28

    摘要: A probe structure containing a contact part (2) formed on one side (1a) of an insulating substrate (1), a conductive circuit (3) formed on the other side (1b) of the insulating substrate (1), wherein the contact part (2) and the conductive circuit (3) are connected via a conductive path (5) formed in a through-hole (4) in the thickness direction of the insulating substrate (1). The contact part (2) has a structure containing a deep layer (1c) having a hardness of 100-700 Hk, an intermediate layer (1b) having a hardness of 10-300 Hk, and a surface layer (1a) having a hardness of 700-1200 Hk successively laminated. The surface layer (1a) preferably has a tensile stress of not more than 50 kg/mm.sup.2. The probe structure maintains low and stable contact resistance in an electric test, in particular a burn-in test, of small test objects such as IC. In a test method wherein a solder bump is formed in a test object and utilized, the solder component of the test object does not adhere to the contact part (2) after testing. The probe structure suffers less from deterioration of contact state after repetitive open/close contact with the test object as compared to the initial contact state, and highly reliable electric testing can be performed.

    摘要翻译: PCT No.PCT / JP95 / 02092 Sec。 371日期1997年04月28日 102(e)日期1997年4月28日PCT提交1995年10月12日PCT公布。 第WO96 / 13728号公报 日期:1996年5月9日包括形成在绝缘基板(1)的一侧(1a)上的接触部分(2)的探针结构,形成在绝缘基板(1)的另一侧(1b)上的导电电路(3) ,其中所述接触部分(2)和所述导电电路(3)经由形成在所述绝缘基板(1)的厚度方向上的通孔(4)中的导电路径(5)连接。 接触部分(2)具有包含硬度为100-700Hk的深层(1c),硬度为10-300Hk的中间层(1b)和硬度为10-300Hk的中间层(1b)的结构, 700-1200 Hk依次层压。 表面层(1a)优选具有不大于50kg / mm2的拉伸应力。 探针结构在诸如IC的小型测试对象的电测试(特别是老化测试)中保持低且稳定的接触电阻。 在测试对象中形成焊料凸点并使用的测试方法中,测试对象的焊料组分在测试后不粘附到接触部分(2)。 与初始接触状态相比,在与被测物体重复开/闭接触之后,探针结构的接触状态劣化较少,能够进行高可靠性的电气测试。