利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.038 秒)

    POST-DEPOSITION SOFT ANNEALING
    6.
    发明申请
    POST-DEPOSITION SOFT ANNEALING 有权
    后沉积软退火

    公开(公告)号：US20130267081A1

    公开(公告)日：2013-10-10

    申请号：US13857566

    申请日：2013-04-05

    申请人： Keith Fox ,  Bart J. Van Schravendijk ,  Dong Niu ,  Lucas B. Henderson ,  Joseph L. Womack

    发明人： Keith Fox ,  Bart J. Van Schravendijk ,  Dong Niu ,  Lucas B. Henderson ,  Joseph L. Womack

    IPC分类号： H01L21/324

    CPC分类号： H01L21/324 ,  C23C16/24 ,  C23C16/56 ,  H01L27/11582

    摘要： The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

    摘要翻译： 本文公开的方法和装置涉及可被称为“软退火”的方法。 软退火提供了各种好处。 从根本上说，它降低了工件的一个或多个硅层的内应力。 通常，尽管不一定，内应力是压应力。 软退火的特别有益的应用是在包含两层或更多层硅的堆叠中减少内部应力。 通常，堆叠中的一层或多层层的内应力显示为晶片弓。 软退火工艺可用于减少含硅堆叠中的压缩弓。 可以执行软退火工艺，而不会使堆叠中的硅变得活化。

    Methods for producing low-k carbon doped oxide films with low residual stress
    8.
    发明授权
    Methods for producing low-k carbon doped oxide films with low residual stress 有权
    生产具有低残余应力的低k碳掺杂氧化物膜的方法

    公开(公告)号：US07781351B1

    公开(公告)日：2010-08-24

    申请号：US10820525

    申请日：2004-04-07

    申请人： Qingguo Wu ,  Haiying Fu ,  Dong Niu ,  Ananda K. Bandyopadhyay ,  David Mordo

    发明人： Qingguo Wu ,  Haiying Fu ,  Dong Niu ,  Ananda K. Bandyopadhyay ,  David Mordo

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228

    摘要： Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.

    摘要翻译： 制备低介电常数和低残余应力的碳掺杂氧化物（CDO）层的方法，涉及例如提供衬底至沉积室并将其暴露于含有不饱和C-C键的有机硅前体或多种有机前体，包括 提供至少一种有机硅和至少一种不饱和C-C键。 所述方法还可以包括使用具有高百分比的低频分量的高频和低频分量的射频功率在沉积室中点燃和维持等离子体，以及在所得介电层具有的条件下沉积碳掺杂介电层 残余应力不大于例如约50MPa，介电常数不大于约3。

    Methods for producing low-k CDO films with low residual stress
    9.
    发明授权
    Methods for producing low-k CDO films with low residual stress 有权
    低残留应力的低k CDO薄膜的制备方法

    公开(公告)号：US07390537B1

    公开(公告)日：2008-06-24

    申请号：US10789103

    申请日：2004-02-27

    申请人： Qingguo Wu ,  Dong Niu ,  Haiying Fu

    发明人： Qingguo Wu ,  Dong Niu ,  Haiying Fu

    IPC分类号： H05H1/24

    CPC分类号： C23C16/401

    摘要： Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a compressive stress or a tensile stress of not greater than, e.g., about 50 MPa, and dielectric constant of less than 3.

    摘要翻译： 提供了制备具有低介电常数和低残余应力的碳掺杂氧化物（CDO）层的方法。 所述方法包括例如向沉积室提供衬底并将其暴露于具有至少一个碳 - 碳三键的分子的化学前体，随后使用具有高的高频功率的射频功率点火和保持沉积室中的等离子体 和低频分量或仅一个频率分量，并且在所得介电层具有不大于例如约50MPa的压缩应力或拉伸应力的条件下沉积碳掺杂的氧化物膜，并且介电常数小于 3。