公开(公告)号：US20150020601A1

公开(公告)日：2015-01-22

申请号：US14379683

申请日：2012-03-02

申请人： Kentaro Miyajima ,  Kisho Ashida ,  Hiroyuki Oota

发明人： Kentaro Miyajima ,  Kisho Ashida ,  Hiroyuki Oota

IPC分类号： G01L1/22 ,  G01N19/00

CPC分类号： G01L1/2293 ,  G01B7/16 ,  G01B7/18 ,  G01L1/044 ,  G01L1/18 ,  G01L1/2262 ,  G01L1/2281 ,  G01N19/00

摘要： A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

摘要翻译： 提供了一种用于测量机械量的装置，其减少了被测量物体与基板金属体之间的热膨胀系数的差异的影响，并且精确地测量在物体中产生的变形量或应变量的机械量 被测量。 该装置包括用于测量被测量物体的变形量的半导体应变传感器模块，并且该模块包括金属体，以及安装在金属体上的半导体应变传感器，用于检测金属体的应变。 待测量的物体由热膨胀系数大于金属体的材料制成。 此外，安装有半导体应变传感器的金属体具有被配置为固定到待测量对象的结构。

公开(公告)号：US08299599B2

公开(公告)日：2012-10-30

申请号：US13040234

申请日：2011-03-03

申请人： Hiroyuki Nakamura ,  Atsushi Fujiki ,  Tatsuhiro Seki ,  Nobuya Koike ,  Yukihiro Sato ,  Kisho Ashida

发明人： Hiroyuki Nakamura ,  Atsushi Fujiki ,  Tatsuhiro Seki ,  Nobuya Koike ,  Yukihiro Sato ,  Kisho Ashida

IPC分类号： H01L23/48 ,  H01L23/10

CPC分类号： H01L27/07 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L29/66 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

摘要翻译： 提高半导体器件的性能和可靠性。 对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。

公开(公告)号：US20080224282A1

公开(公告)日：2008-09-18

申请号：US12011397

申请日：2008-01-25

申请人： Kisho Ashida ,  Kenya Kawano ,  Akira Muto ,  Ichio Shimizu

发明人： Kisho Ashida ,  Kenya Kawano ,  Akira Muto ,  Ichio Shimizu

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A technique for preventing cracks and residual resin on a semiconductor chip in a molding process in the assembly of semiconductor devices is provided. A distance from a bottom surface of a cavity of a lower mold die to a ceiling surface of a cavity of an upper mold die of a resin molding die is made same as or smaller than a distance from a lower surface of a die pad to an upper surface of a plate terminal, and an U-shape elastic body is arranged on semiconductor elements between the plate terminal and the die pad, thereby mitigating a load due to a clamp pressure of mold dies in the molding process by an elastic deformation of the elastic body. Consequently, a load applied on the semiconductor devices is reduced, thereby preventing formation of cracks on the semiconductor elements.

摘要翻译： 提供了一种用于在半导体器件的组装中的模制工艺中防止半导体芯片上的裂纹和残留树脂的技术。 与树脂成型模具的上模具的模腔的下表面的下表面的距离与从模垫的下表面到 板端子的上表面和U形弹性体布置在板端子和管芯焊盘之间的半导体元件上，从而通过模制过程中的模具的弹性变形来减轻由于模具的夹紧压力引起的负载 弹性体。 因此，施加在半导体器件上的负载减小，从而防止在半导体元件上形成裂纹。

公开(公告)号：US06961357B2

公开(公告)日：2005-11-01

申请号：US10632331

申请日：2003-07-31

申请人： Hiroshi Moriya ,  Kisho Ashida ,  Yoshiaki Niwa

发明人： Hiroshi Moriya ,  Kisho Ashida ,  Yoshiaki Niwa

IPC分类号： H01S5/022 ,  H01S3/04 ,  H01S5/00 ,  H01S5/02

CPC分类号： H01S5/02252 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02236 ,  H01S5/02272

摘要： In a semiconductor laser module, in order to sufficiently reduce the thermal stress arising in a due to the bonding of elements when they are packaged and to improve the yield of production, the semiconductor laser module is provided with a semiconductor laser element, a submount bonded to the semiconductor laser element with a solder layer in-between and thereby mounted with it, and a base mounted with this submount with another solder layer in-between. Herein, T/W≧0.15 holds, where W is the width of the submount in the direction orthogonal to the optical axis of the semiconductor laser element and T is the thickness of the submount.

摘要翻译： 在半导体激光器模块中，为了充分降低由于封装时的元件的接合而产生的热应力，并且为了提高生产成本，半导体激光器模块设置有半导体激光元件， 到具有焊料层的半导体激光元件，并且由此安装有焊料层，以及安装有该基座的基座，其间具有另一个焊料层。 这里，T / W> = 0.15，其中，W是与基板的光轴正交的方向上的基台的宽度，T是基台的厚度。

公开(公告)号：US20140027868A1

公开(公告)日：2014-01-30

申请号：US14110716

申请日：2011-04-21

申请人： Kisho Ashida ,  Hiroyuki Ota

发明人： Kisho Ashida ,  Hiroyuki Ota

IPC分类号： H01L29/84

CPC分类号： H01L29/84 ,  G01B7/16 ,  G01L1/18 ,  G01L1/26 ,  G01L19/147

摘要： In a mechanical quantity measuring device (1) having a sensor chip (2) which outputs a sense output (S) corresponding to a mechanical quantity acting on the object to be measured (4), and a flexible wiring board (3) which supports the sensor chip (2) and has a wire (6) to lead out the sense output (S) to outside, and in which in measuring the mechanical quantity, the sensor chip (2) and the flexible wiring board (3) are attached to the object to be measured (4), a cutout (5) is provided on the flexible wiring board (3) near the sensor chip (2) and on the side where the wire (6) is arranged for the sensor chip (2). Thus, change in the sense output (S) with time can be restrained.

摘要翻译： 在具有传感器芯片（2）的机械量测量装置（1）中，所述传感器芯片（2）输出对应于作用在待测物体（4）上的机械量的感测输出（S），以及柔性布线板（3） 传感器芯片（2），并且具有将感测输出（S）导出到外部的导线（6），并且在测量机械量时传感器芯片（2）和柔性布线板（3）被附接 在传感器芯片（2）附近的柔性布线基板（3）上设置切口（5），并且在布线传感器芯片（2）的一侧设置切口（5） ）。 因此，可以抑制感测输出（S）随时间的变化。

公开(公告)号：US20110169102A1

公开(公告)日：2011-07-14

申请号：US13050313

申请日：2011-03-17

申请人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

发明人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

IPC分类号： H01L27/088

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/01039 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207

摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

摘要翻译： 提高了半导体器件的电气特性。 在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。 高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。 低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。 金属板包括与第二半导体芯片的焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分和从第一部分的长边延伸到第三部分的第三部分 引线。

公开(公告)号：US07932588B2

公开(公告)日：2011-04-26

申请号：US12695657

申请日：2010-01-28

申请人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

发明人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

IPC分类号： H01L23/02 ,  H01L31/111

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/01039 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207

摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

摘要翻译： 提高了半导体器件的电气特性。 在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。 高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。 低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。 金属板包括与第二半导体芯片的接合焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分，以及从第一部分的长边延伸到第三部分的第三部分 引线。

公开(公告)号：US20100181628A1

公开(公告)日：2010-07-22

申请号：US12691168

申请日：2010-01-21

申请人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

发明人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78703 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85385 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2924/206

摘要： Prevention of disconnection of a bonding wire resulting from adhesive interface delamination between a resin and a leadframe, and improvement of joint strength of the resin and the leadframe are achieved in a device manufactured by a low-cost and simple processing. A boss is provided on a source lead by a stamping processing, and a support pillar is provided in a concave portion on a rear side of the source lead in order to prevent ultrasonic damping upon joining the bonding wire onto the boss, so that an insufficiency of the joint strength between the bonding wire and the source lead is prevented. Also, a continuous bump is provided on the boss so as to surround a joint portion between the source lead and the bonding wire, so that disconnection of the bonding wire resulting from delamination between the resin and the source lead is prevented.

摘要翻译： 在通过低成本且简单的加工制造的装置中，可以防止树脂与引线框之间的粘合剂界面分层导致的接合线的断开，提高树脂和引线框的接合强度。 通过冲压加工在源极上设置凸台，并且在源极的后侧的凹部设置支撑柱，以便在将接合线接合到凸台上时防止超声波阻尼，使得不足 阻止了接合线和源极之间的接合强度。 此外，在凸台上设置连续凸块，以围绕源极引线和接合线之间的接合部分，从而防止由树脂和源极引线之间的分层导致的接合线的断开。

公开(公告)号：US07432594B2

公开(公告)日：2008-10-07

申请号：US11173740

申请日：2005-06-30

申请人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

发明人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L24/40 ,  H01L21/566 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

摘要翻译： 半导体器件具有包括在半导体芯片的厚度方向上彼此相对的第一和第二表面的半导体芯片，其中第一和第二表面分别包括第一和第二电极表面，第一和第二导电构件覆盖第一和第二表面 第二电极表面分别在厚度方向上看到以分别电连接到第一和第二电极表面。

公开(公告)号：US06963593B2

公开(公告)日：2005-11-08

申请号：US10632350

申请日：2003-07-31

申请人： Hiroshi Moriya ,  Kisho Ashida ,  Toshiaki Ozaki

发明人： Hiroshi Moriya ,  Kisho Ashida ,  Toshiaki Ozaki

IPC分类号： G02B6/42 ,  H01S5/022 ,  H01S5/00 ,  H01S3/04

CPC分类号： H01S5/02216 ,  H01S5/02284

摘要： For preventing an optical axis from shifting due to a heat cycle in a semiconductor laser module, or in a optical transmitter, the semiconductor laser module comprises, a semiconductor laser element, a frame for storing the semiconductor laser element therein, an optical fiber fixing portion being connected to the frame; and a flange being connected to the frame, and having a fixing portion for fixing the frame on a substrate, wherein the flange has a narrow width region between a fixing region, including a foxing portion with the substrate therein, and the frame, and the narrow width region is narrower than width of the fixing region.

摘要翻译： 为了防止光轴由于半导体激光器模块或光发射器中的热循环而偏移，半导体激光器模块包括半导体激光元件，用于存储半导体激光元件的框架，光纤固定部分 连接到框架; 和凸缘连接到框架上，并具有用于将框架固定在基板上的固定部分，其中凸缘在包括具有其中的基板的一个固定区域和该框架之间的窄的区域之间具有窄的宽度区域， 窄宽度区域比固定区域的宽度窄。