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13 条记录 (耗时 0.014 秒)

    Method for metallizing surfaces by means of metal powders
    3.
    发明授权
    Method for metallizing surfaces by means of metal powders 失效
    通过金属粉末金属化表面的方法

    公开(公告)号：US5409741A

    公开(公告)日：1995-04-25

    申请号：US836650

    申请日：1992-02-14

    申请人： Lucien D. Laude

    发明人： Lucien D. Laude

    IPC分类号： C23C24/00 ,  C23C18/30 ,  C23C26/00 ,  H05K1/03 ,  H05K3/10 ,  H05K3/18 ,  B05D3/06

    CPC分类号： H05K3/102 ,  C23C18/30 ,  H05K1/0306 ,  H05K1/0313 ,  H05K2201/0266 ,  H05K2201/0347 ,  H05K2203/107 ,  H05K3/181

    摘要： The method for metallizing the surface of dielectric materials according to the invention comprises a first step wherein a metal powder, the size of the grains of which is comprised between 10 and 5000 nm, is deposited and then incorporated into the surface of the dielectric material. In a second step of the method, the dielectric material which is so impregnated with metal, is immersed into an autocatalytic bath to coat the impregnated zones of the material with a layer of the metal contained in the bath in a thickness which is proportional to the immersion time. This method enables to metallize materials such as oxides, polymers and composites containing these oxides and/or these polymers. The characteristics of the metal deposits are controlled, on the one hand, by the type of metal, and the size and the geometry of the metal powder grains and, on the other hand, by the type and the structure of the dielectric materials coated with these deposits.

    摘要翻译： 根据本发明的用于金属化电介质材料的表面的方法包括第一步骤，其中沉积10至5000nm晶粒尺寸的金属粉末，然后并入电介质材料的表面。 在该方法的第二步中，将浸渍有金属的介电材料浸入自催化浴中，以包含在浴中的金属层涂覆该材料的浸渍区，其厚度与 沉浸时间 该方法能够使包含这些氧化物和/或这些聚合物的材料如氧化物，聚合物和复合材料金属化。 金属沉积物的特性一方面由金属的类型以及金属粉末颗粒的尺寸和几何形状进行控制，另一方面通过涂覆有金属粉末的介电材料的类型和结构来控制 这些存款。

    Process for the metallization of plastic materials and products thereto obtained
    5.
    发明授权
    Process for the metallization of plastic materials and products thereto obtained 失效
    获得的塑料材料及其制品的金属化方法

    公开(公告)号：US5599592A

    公开(公告)日：1997-02-04

    申请号：US530315

    申请日：1995-09-29

    申请人： Lucien D. Laude

    发明人： Lucien D. Laude

    IPC分类号： C23C18/22 ,  H05K1/03 ,  H05K3/18 ,  B05D3/06

    CPC分类号： H05K3/185 ,  C23C18/22 ,  H05K1/0373

    摘要： A positive metallization process for metallizing a plastic composite piece containing a polymer and grains of one or more oxides, includes three successive steps. The first step consists of irradiating the plastic piece surface to be metallized with a light beam emitted by an excimer laser. The second step consists of immersing the irradiated piece into at least one autocatalytic bath containing metal ions and without palladium. This immersion induces the deposit of the metal ions onto the irradiated surface to form a metal film onto the surface. The third step consists of thermally processing the metallized plastic piece to induce the diffusion of the deposited metal into the plastic piece.

    摘要翻译： PCT No.PCT / EP95 / 00346 Sec。 371 1995年9月29日第 102（e）1995年9月29日PCT PCT 1995年1月31日PCT公布。 公开号WO95 / 20689 日期1995年8月3日用于金属化含有聚合物和一种或多种氧化物的颗粒的塑料复合片的正金属化方法包括三个连续步骤。 第一步包括用准分子激光器发射的光束照射待金属化的塑料片表面。 第二步是将被照射的片浸入含有金属离子和不含钯的至少一个自催化浴中。 这种浸渍引起金属离子沉积到被照射的表面上以在表面上形成金属膜。 第三步包括热处理金属化的塑料件以引起沉积的金属扩散到塑料件中。

    Method for preparing composite or elementary semi-conducting polycrystalline films
    6.
    发明授权
    Method for preparing composite or elementary semi-conducting polycrystalline films 失效
    制备复合或半导体多晶薄膜的方法

    公开(公告)号：US4463028A

    公开(公告)日：1984-07-31

    申请号：US289695

    申请日：1981-08-03

    申请人： Lucien D. Laude

    发明人： Lucien D. Laude

    IPC分类号： C30B1/02 ,  C30B1/08 ,  B05D5/12

    CPC分类号： C30B1/08 ,  C30B1/023 ,  Y10S148/093 ,  Y10S148/094

    摘要： There is described a method for preparing polycrystalline semi-conducting films comprised of two elements respectively from Groups III and V, or Groups II and VI of the Periodic Table, by irradiating with a laser beam a film which is comprised of at least two layers from elements selected with a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing into crystallites which are regularly aligned and with a size at least equal to the thickness of the resulting film.

    摘要翻译： 描述了通过用激光束照射由两个元素组成的多晶半导体膜，该多晶半导体膜由分别来自元素周期表的III和V族或II族和VI族的元素组成，该膜由至少两层 所述膜以非化学计量比选择，所述膜沉积在非晶体衬底上并涂覆有保护层，该方法包括用结构化的激光束照射所述膜以使结晶成规则排列的微晶，并且与 尺寸至少等于所得膜的厚度。

    BIOCOMPATIBLE IMPLANTS AND METHODS OF MAKING AND ATTACHING THE SAME
    7.
    发明申请
    BIOCOMPATIBLE IMPLANTS AND METHODS OF MAKING AND ATTACHING THE SAME 有权
    生物可塑性植入物及其制备方法

    公开(公告)号：US20080306611A1

    公开(公告)日：2008-12-11

    申请号：US12041651

    申请日：2008-03-03

    申请人： Adrian P. Rowley ,  Lucien D. Laude ,  Mark S. Humayun ,  James D. Weiland ,  Atoosa Lotfi

    发明人： Adrian P. Rowley ,  Lucien D. Laude ,  Mark S. Humayun ,  James D. Weiland ,  Atoosa Lotfi

    IPC分类号： A61F2/02

    CPC分类号： A61F2/148 ,  A61L27/34 ,  A61L27/50 ,  A61L2400/18 ,  A61N1/0543 ,  A61N1/36 ,  A61N1/36046 ,  C08L89/00

    摘要： The invention provides a biocompatible silicone implant that can be securely affixed to living tissue through interaction with integral membrane proteins (integrins). A silicone article containing a laser-activated surface is utilized to make the implant. One example is an implantable prosthesis to treat blindness caused by outer retinal degenerative diseases. The device bypasses damaged photoreceptors and electrically stimulates the undamaged neurons of the retina. Electrical stimulation is achieved using a silicone microelectrode array (MEA). A safe, protein adhesive is used in attaching the MEA to the retinal surface and assist in alleviating focal pressure effects. Methods of making and attaching such implants are also provided.

    摘要翻译： 本发明提供了一种生物相容的硅氧烷植入物，其通过与整合的蛋白质（整联蛋白）的相互作用可靠地固定在生物体组织上。 使用含有激光激活表面的硅胶制品来制造植入物。 一个例子是用于治疗由视网膜外变性疾病引起的失明的可植入假体。 该装置绕过受损的光感受器并电刺激视网膜的未损伤的神经元。 使用硅微电极阵列（MEA）实现电刺激。 使用安全的蛋白质粘合剂将MEA附着到视网膜表面并有助于减轻焦点压力的影响。 还提供了制造和附接这种植入物的方法。

    Method for crystallizing films
    9.
    发明授权
    Method for crystallizing films 失效
    使膜结晶的方法

    公开(公告)号：US4469551A

    公开(公告)日：1984-09-04

    申请号：US302753

    申请日：1981-09-16

    申请人： Lucien D. Laude

    发明人： Lucien D. Laude

    IPC分类号： H01L31/04 ,  B23K26/00 ,  C30B1/02 ,  C30B1/08 ,  C30B21/02 ,  C30B29/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/20 ,  H01L21/268 ,  C30B1/04

    CPC分类号： C30B29/40 ,  C30B1/02 ,  C30B1/023 ,  C30B1/08 ,  C30B21/02 ,  C30B29/48 ,  Y10S117/904

    摘要： There is described a method for crystallizing films selected from the group comprising the amorphous elementary semi-conducting films and the polymetallic films comprised of two elements belonging respectively to Groups III and V, or Groups II and VI of the Periodic Table, which comprises irradiating the film surface with a laser beam guided by an assembly from optic fibers which are arranged in parallel relationship with one another, each fiber having a diameter which is not larger than 50.mu., said irradiating causing crystallizing into crystallites which are regularly distributed and closely confined.

    摘要翻译： 描述了选自包括非晶元件半导电膜和由分别属于元素周期表III和V族或II族和VI族的两种元素组成的组的膜结晶的方法，其中包括将 膜表面具有由彼此平行关系的光纤的组件引导的激光束，每根纤维的直径不大于50微米，所述照射导致结晶成规则分布和紧密限制的微晶。