摘要:
The invention relates to a method of embedding a metal trace in a silicone containing polymer layer, by the steps of applying an agent that does not adhere to a substrate; applying a polymer layer on the non adhering agent; irradiating a surface of the polymer with a light beam emitted by an excimer laser creating cuts, grooves, blind holes or vias; immersing the irradiated polymer in an autocatalytic bath containing metal ions and metallizing the polymer; thermally treating the metallized polymer layer to induce diffusion of the metalized metal into the first polymer layer; applying a polymer layer on the thermally treated metallized polymer; and thermally treating the metallized polymer.
摘要:
The present invention relates to a process for embedding at least one layer of at least one metal trace in a silicone containing polymer, comprising: a) applying a non adhering on a substrate; b) applying a polymer layer on the non adhering agent; c) irradiation at least one surface area of said polymer with a light beam emitted by an excimer laser; d) immersing said irradiated polymer in at least one autocatalytic bath containing metal ions of at least one metal and metallizing the polymer; e) thermally treating said metallized polymer; f) applying a polymer layer on said thermally treated metallized polymer; and g) thermally treating said metallized polymer.
摘要:
A polymer layer comprising silicone contains oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or mixtures thereof and one or more metal traces embedded in the polymer layer, where the metal trace is bonded to the polymer silicon metal bond.
摘要翻译:包含硅氧烷的聚合物层包含SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的氧化物颗粒,以及嵌入聚合物层中的一种或多种金属迹线, 聚合物硅金属键。
摘要:
The invention is a method of making a flexible electrode array, comprising a silicone containing body, a metal trace layer and an electrode pad on the surface, including the steps of irradiating a surface area of a molded silicone containing layer yielding traces with the light beam from a pulsed ultraviolet laser source; immersing said irradiated molded silicone layer for inducing the deposit of metal ions to form metal traces; applying a silicone containing layer on the silicone containing layer and the metal traces; irradiating the surface for drilling holes in the molded silicone containing layer; and immersing the irradiated molded silicone layer for inducing the deposit of metal ions to form metal electrode pads.
摘要:
The present invention provides a flexible electrode array, comprising a silicone containing body, at least one metal trace layer and at least one electrode pad on the surface.
摘要:
The present invention provides a process for embedding at least one layer of at least one metal trace in a silicone-containing polymer, comprising: a) applying a polymer layer on a substrate; b) thermally treating the polymer; c) irradiating at least one surface area of the polymer with a light beam emitted by an excimer laser; d) immersing the irradiated polymer in at least one autocatalytic bath containing ions of at least one metal, and metallizing the polymer; e) thermally treating the metallized polymer; f) applying a polymer layer covering the thermally treated metallized polymer; and g) thermally treating the metallized covered polymer. The present invention further provides a polymer layer comprising silicone containing oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or mixtures thereof and at least one metal trace embedded in said polymer layer.The present invention further provides a flexible electrode array comprising silicone containing oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or mixtures thereof and at least one metal trace embedded in said polymer layer.
摘要翻译:本发明提供了一种在含硅酮聚合物中嵌入至少一层至少一种金属痕迹的方法,包括:a)在基底上施加聚合物层; b)热处理聚合物; c)用由准分子激光器发射的光束照射所述聚合物的至少一个表面积; d)将经辐射的聚合物浸入至少一种含有至少一种金属的离子的自催化浴中,并对聚合物进行金属化; e)热处理金属化聚合物; f)涂覆覆盖热处理的金属化聚合物的聚合物层; 和g)热处理金属化被覆聚合物。 本发明还提供一种聚合物层,其包含含硅氧烷的SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的氧化物颗粒,以及嵌入所述聚合物层中的至少一种金属迹线。 本发明还提供一种柔性电极阵列,其包括含硅氧烷的SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的氧化物颗粒和嵌入所述聚合物层中的至少一种金属迹线。
摘要:
A flexible electrode array of silicone containing oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or their mixtures and at least one metal trace in a silicone-containing polymer.
摘要翻译:含有SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的含硅氧烷颗粒的柔性电极阵列和含硅氧烷聚合物中的至少一种金属痕迹。
摘要:
The present invention provides a flexible circuit electrode array adapted for neural stimulation, comprising: a polymer base layer; metal traces deposited on the polymer base layer, including electrodes suitable to stimulate neural tissue; a polymer top layer deposited on the polymer base layer and the metal traces at least one tack opening. The present invention provides further a method of making a flexible circuit electrode array comprising depositing a polymer base layer; depositing metal on the polymer base layer; patterning the metal to form metal traces; depositing a polymer top layer on the polymer base layer and the metal traces; and preparing at least one tack opening.
摘要:
The invention involves a flexible circuit electrode array device comprising: a polymer layer; wherein the polymer layer includes one or more metal traces, an electrode array; one or more bond pads; and the electrode array is located on the opposite side of the polymer layer.The invention further involves a method for backside processing of a flexible circuit electrode device, comprising: applying polymer film on a substrate; processing the front side; releasing the polymer film from substrate; flipping over the polymer film and fixing it onto the substrate; processing the backside; and final releasing of the polymer film from the substrate.The invention further involves a method for backside processing of a flexible circuit electrode device, comprising: processing the front side without releasing the polymer; processing the backside by sacrificial substrate method, or by laser drilling method; and releasing the polymer film from the substrate.
摘要:
An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.