Polymer layer comprising silicone and at least one metal trace and a process of manufacturing the same
    6.
    发明授权
    Polymer layer comprising silicone and at least one metal trace and a process of manufacturing the same 有权
    包含硅氧烷和至少一种金属痕迹的聚合物层及其制造方法

    公开(公告)号:US08771805B2

    公开(公告)日:2014-07-08

    申请号:US11270907

    申请日:2005-11-10

    IPC分类号: B05D1/18 B05D3/00 B05D3/06

    摘要: The present invention provides a process for embedding at least one layer of at least one metal trace in a silicone-containing polymer, comprising: a) applying a polymer layer on a substrate; b) thermally treating the polymer; c) irradiating at least one surface area of the polymer with a light beam emitted by an excimer laser; d) immersing the irradiated polymer in at least one autocatalytic bath containing ions of at least one metal, and metallizing the polymer; e) thermally treating the metallized polymer; f) applying a polymer layer covering the thermally treated metallized polymer; and g) thermally treating the metallized covered polymer. The present invention further provides a polymer layer comprising silicone containing oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or mixtures thereof and at least one metal trace embedded in said polymer layer.The present invention further provides a flexible electrode array comprising silicone containing oxide particles of SiO2, TiO2, Sb2O3, SnO2, Al2O3, ZnO, Fe2O3, Fe3O4, talc, hydroxyapatite or mixtures thereof and at least one metal trace embedded in said polymer layer.

    摘要翻译: 本发明提供了一种在含硅酮聚合物中嵌入至少一层至少一种金属痕迹的方法,包括:a)在基底上施加聚合物层; b)热处理聚合物; c)用由准分子激光器发射的光束照射所述聚合物的至少一个表面积; d)将经辐射的聚合物浸入至少一种含有至少一种金属的离子的自催化浴中,并对聚合物进行金属化; e)热处理金属化聚合物; f)涂覆覆盖热处理的金属化聚合物的聚合物层; 和g)热处理金属化被覆聚合物。 本发明还提供一种聚合物层,其包含含硅氧烷的SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的氧化物颗粒,以及嵌入所述聚合物层中的至少一种金属迹线。 本发明还提供一种柔性电极阵列,其包括含硅氧烷的SiO 2,TiO 2,Sb 2 O 3,SnO 2,Al 2 O 3,ZnO,Fe 2 O 3,Fe 3 O 4,滑石,羟基磷灰石或其混合物的氧化物颗粒和嵌入所述聚合物层中的至少一种金属迹线。

    Flexible circuit electrode array device and a method for backside processing of a flexible circuit electrode device
    9.
    发明授权
    Flexible circuit electrode array device and a method for backside processing of a flexible circuit electrode device 有权
    柔性电路电极阵列器件及柔性电路电极器件的背面处理方法

    公开(公告)号:US08738149B2

    公开(公告)日:2014-05-27

    申请号:US13397604

    申请日:2012-02-15

    IPC分类号: A61N1/04

    摘要: The invention involves a flexible circuit electrode array device comprising: a polymer layer; wherein the polymer layer includes one or more metal traces, an electrode array; one or more bond pads; and the electrode array is located on the opposite side of the polymer layer.The invention further involves a method for backside processing of a flexible circuit electrode device, comprising: applying polymer film on a substrate; processing the front side; releasing the polymer film from substrate; flipping over the polymer film and fixing it onto the substrate; processing the backside; and final releasing of the polymer film from the substrate.The invention further involves a method for backside processing of a flexible circuit electrode device, comprising: processing the front side without releasing the polymer; processing the backside by sacrificial substrate method, or by laser drilling method; and releasing the polymer film from the substrate.

    摘要翻译: 本发明涉及一种柔性电路电极阵列器件,包括:聚合物层; 其中所述聚合物层包括一个或多个金属迹线,电极阵列; 一个或多个接合垫; 并且电极阵列位于聚合物层的相对侧上。 本发明还涉及一种用于柔性电路电极器件的背面处理的方法,包括:在基底上施加聚合物膜; 正面加工; 从基材中释放聚合物膜; 翻转在聚合物膜上并将其固定在基底上; 处理背面; 并从基底中最终释放聚合物膜。 本发明还涉及一种用于柔性电路电极器件的背面处理的方法,包括:处理前侧而不释放聚合物; 通过牺牲基板方法或通过激光钻孔方法处理背面; 并从基板上释放聚合物膜。