公开(公告)号：US08508031B2

公开(公告)日：2013-08-13

申请号：US12907304

申请日：2010-10-19

申请人： Nobuyuki Hayashi ,  Yasuhiro Yoneda ,  Teru Nakanishi ,  Masaru Morita

发明人： Nobuyuki Hayashi ,  Yasuhiro Yoneda ,  Teru Nakanishi ,  Masaru Morita

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L23/433 ,  H01L23/4006 ,  H01L2223/6611 ,  H01L2224/16225 ,  H01L2924/09701 ,  H01L2924/15311 ,  H05K3/303 ,  H05K3/3436 ,  H05K2201/10409 ,  H05K2201/10734 ,  H05K2203/0278 ,  Y02P70/613

摘要： An electronic device includes a wiring board; a semiconductor device arranged at an upper side of the wiring board with an electrically conductive member being arranged therebetween; a covering member arranged at an upper side of the semiconductor device; and a supporting member arranged at a lower side of the wiring board, the supporting member having a convex portion facing the wiring board, the supporting member being connected to the covering member and supporting the wiring board at the convex portion.

摘要翻译： 一种电子装置，包括：布线板; 布置在所述布线板的上侧的半导体器件，其间布置有导电构件; 布置在所述半导体器件的上侧的覆盖部件; 以及布置在所述布线板的下侧的支撑构件，所述支撑构件具有面向所述布线板的凸部，所述支撑构件连接到所述覆盖构件并且在所述凸部处支撑所述布线板。

公开(公告)号：US07983727B2

公开(公告)日：2011-07-19

申请号：US11976649

申请日：2007-10-26

申请人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka ,  Kazuaki Kurihara

发明人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka ,  Kazuaki Kurihara

IPC分类号： H01B12/02 ,  H01P1/20

CPC分类号： H01P5/085 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

摘要： In a wall of a package base made of aluminum or aluminum alloy, there is formed a through-hole, through which a semi-rigid coaxial cable passes. A central conductor of the semi-rigid coaxial cable is joined to an electrode with a solder material. The semi-rigid coaxial cable has an insulating material through which the central conductor passes and an outer conductor provided therearound. The central conductor and outer conductor are made of stainless steel, for example, and the insulating material is made of fluororesin, for example. Inside the through-hole, the wall of the package base and the outer conductor are electrically connected to each other via a stainless material within the hole formed in a cylindrical fluororesin material. The semi-rigid coaxial cable and the like are fixed to the wall with a conductive screw.

摘要翻译： 在由铝或铝合金制成的封装基座的壁上形成有通孔，半刚性同轴电缆穿过该通孔。 半刚性同轴电缆的中心导体连接到具有焊料材料的电极。 半刚性同轴电缆具有绝缘材料，中心导体通过该绝缘材料和在其周围设置的外导体。 例如，中心导体和外导体由不锈钢制成，绝缘材料例如由氟树脂制成。 在通孔内部，封装基部的壁和外部导体通过在圆柱形氟树脂材料形成的孔内的不锈钢材料彼此电连接。 半刚性同轴电缆等用导电螺钉固定在墙壁上。

公开(公告)号：US20110063812A1

公开(公告)日：2011-03-17

申请号：US12853647

申请日：2010-08-10

申请人： Teru NAKANISHI ,  Nobuyuki Hayashi ,  Masaru Morita ,  Yasuhiro Yoneda

发明人： Teru NAKANISHI ,  Nobuyuki Hayashi ,  Masaru Morita ,  Yasuhiro Yoneda

IPC分类号： H05K7/02 ,  H05K3/30

CPC分类号： H05K3/3426 ,  G01R31/2853 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/4006 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03828 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13011 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/81054 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/19041 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/10257 ,  H05K2201/10265 ,  H05K2201/10984 ,  H05K2201/2036 ,  Y02P70/613 ,  Y10T29/4913

摘要： An electronic device includes a circuit board having a first electrode formed on a main surface thereof, a semiconductor device disposed toward the main surface of the circuit board, the semiconductor device having a second electrode formed on a surface thereof opposed to the main surface, and a connection member electrically connecting between the first and second electrodes. The connection member includes a hollow cylindrical member and a conductive member disposed within the hollow cylindrical member.

摘要翻译： 电子设备包括：电路板，具有形成在其主表面上的第一电极，半导体器件设置在电路板的主表面上，该半导体器件具有形成在与主表面相对的表面上的第二电极， 电连接在第一和第二电极之间的连接构件。 连接构件包括中空圆柱形构件和设置在中空圆柱形构件内的导电构件。

公开(公告)号：US07805954B2

公开(公告)日：2010-10-05

申请号：US10947539

申请日：2004-09-23

申请人： Kazunori Yamanaka ,  Teru Nakanishi

发明人： Kazunori Yamanaka ,  Teru Nakanishi

IPC分类号： F25D23/12

CPC分类号： F25D19/006 ,  H01P1/203

摘要： The high-frequency circuit cooling apparatus comprises a package container 14 for housing a high-frequency circuit, a tank 16 for storing a gas to be introduced into the package container 14, a cold head 12 for cooling the package container 14 and the tank 16, pipes 24, 26 connected to the tank 16, for supplying the gas into the tank 16, pipes 18, 22 detachably connected between the tank 16 and the package container 14, for introducing the gas in the tank 16 into the package container 14, and pipes 34, 36 detachably connected to the package container 14, for discharging the gas in the package container 14.

摘要翻译： 高频电路冷却装置包括用于容纳高频电路的封装容器14，用于存储要引入到封装容器14中的气体的容器16，用于冷却封装容器14的冷却头12和容器16 连接到罐16的用于将气体供应到罐16中的管道24,26，可拆卸地连接在罐16和包装容器14之间的管18,22，用于将罐16中的气体引入包装容器14中， 以及可拆卸地连接到包装容器14的用于排出包装容器14中的气体的管道34,36。

公开(公告)号：US20050261135A1

公开(公告)日：2005-11-24

申请号：US10949808

申请日：2004-09-27

申请人： Kazunori Yamanaka ,  Teru Nakanishi ,  Manabu Kai ,  Akihiko Akasegawa

发明人： Kazunori Yamanaka ,  Teru Nakanishi ,  Manabu Kai ,  Akihiko Akasegawa

IPC分类号： H01L39/00 ,  H01B12/02 ,  H01P1/203 ,  H01P1/205 ,  H01P1/208 ,  H01P7/08

CPC分类号： H01P1/20336 ,  H01P1/20363 ,  H01P1/20381 ,  Y10S505/70 ,  Y10S505/866

摘要： The superconducting filter comprises input/output feeders 14a, 14b formed on one surface of a dielectric substrate 10, resonator patterns 16a-16e formed on said one surface of the dielectric substrate 10, and a dielectric plate 24 mounted on said one surface of the dielectric plate 24 with a plurality of spacers 20, 22 formed on said one surface of the dielectric substrate 10. The dielectric plate 24 covers the region including the resonator patterns 16a-16e, and the input/output feeders 14a, 14b length-wise over the length within ±20% of positive integer times a ¼ effective wavelength from the sides nearer to the resonator patterns.

摘要翻译： 超导滤波器包括形成在电介质基板10的一个表面上的输入/输出馈送器14a，14b，形成在电介质基板10的所述一个表面上的谐振器图案16a-16e以及安装在所述电介质基板10上的电介质板24 电介质板24的表面具有形成在电介质基板10的所述一个表面上的多个间隔件20,22。 电介质板24覆盖包括谐振器图案16a-16e的区域，并且输入/输出馈送器14a，14b在正整数倍的±20％之内的长度上，距离更接近的边的1/4有效波长 到谐振器图案。

公开(公告)号：US20050020452A1

公开(公告)日：2005-01-27

申请号：US10921195

申请日：2004-08-19

申请人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka

发明人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka

IPC分类号： H01R24/38 ,  H01R13/03 ,  H01R43/00 ,  H01R103/00 ,  H01F1/00

CPC分类号： H01R24/40 ,  H01R4/68 ,  H01R13/03 ,  H01R2103/00

摘要： A coaxial connector 10 to be connected to a coaxial cable comprising a surface coating layer 20 of indium or an indium alloy being formed on the surface of a terminal 12 which is a central conductor. Since indium similar to an indium-based solder material is used as the material of the surface coating layer 20, a reaction product is prevented from being produced in indium-based solder by the reaction between the material of the surface coating layer 20 and the material of the indium-based solder material. Accordingly, deterioration of the flexibility of the indium-based solder can be prevented, and a superconducting device which can endure the repeated temperature changes between the room temperature and lower temperatures can be provided.

摘要翻译： 连接到同轴电缆的同轴连接器10，其包括在作为中心导体的端子12的表面上形成有铟或铟合金的表面涂层20。 由于使用与铟系焊料材料相似的铟作为表面被覆层20的材料，因此通过表面被覆层20的材料与材料之间的反应来防止在铟系焊料中产生反应产物 的铟基焊料。 因此，可以防止铟系焊料的柔软性的劣化，能够提供在室温和较低温度之间能够承受反复温度变化的超导装置。

公开(公告)号：US06690957B2

公开(公告)日：2004-02-10

申请号：US10101173

申请日：2002-03-20

申请人： Akihiko Akasegawa ,  Kazunori Yamanaka ,  Teru Nakanishi

发明人： Akihiko Akasegawa ,  Kazunori Yamanaka ,  Teru Nakanishi

IPC分类号： H01B1200

CPC分类号： H01L39/2448 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2422

摘要： A high temperature superconductor film which is Y—Ba—Cu—O-based and formed on a dielectric substrate 10, and has a Cu composition ratio to the Ba near the upper surface of the film which is higher than a Cu composition ratio to the Ba inside the film. The YBCO-based high temperature superconductor film is formed with a Cu composition on the film surface maintained higher with respect to the stoichiometric composition, whereby the Cu oxide can be easily produced while the production of the yttrium oxides can be depressed. The yttrium oxides cannot be easily produced, which makes it difficult for pores and crystal strains to be generated while the Cu oxide functions as a flux for advancing the crystal growth, whereby the YBCO-based high temperature superconductor film can have good film quality and single crystal. The superconducting elements can be formed of the YBCO-based high temperature superconducting film of such good film quality.

摘要翻译： 一种Y-Ba-Cu-O系的高温超导体膜，形成在电介质基板10上，并且与膜的上表面附近的Ba的Cu组成比高于Cu组成比 电影里面有Ba。 基于YBCO的高温超导体膜在相对于化学计量组成保持较高的膜表面上形成Cu组成，由此可以容易地制备Cu氧化物，同时可以抑制氧化钇的生成。 氧化钇不容易产生，这使得难以产生孔和晶体应变，而Cu氧化物用作用于促进晶体生长的助熔剂，由此YBCO基高温超导体膜可以具有良好的膜质量和单一的 水晶。 超导元件可以由具有良好膜质量的YBCO基高温超导膜形成。

公开(公告)号：US5611481A

公开(公告)日：1997-03-18

申请号：US504080

申请日：1995-07-19

申请人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

发明人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

IPC分类号： B23K35/26 ,  H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L21/58

CPC分类号： H01L24/16 ,  B23K35/26 ,  H01L24/13 ,  H01L24/81 ,  H05K3/3436 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13201 ,  H01L2224/13211 ,  H01L2224/133 ,  H01L2224/16506 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81805 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  Y02P70/613

摘要： An integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board. One embodiment according to the present invention is a method for fabricating an integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board, both surfaces of the first and second electrodes having an adhesive tendency to molten metal, the method comprising the steps of forming a metal bump on the first electrode, the metal bump being made of a soldering metal alloy consisting of a solid phase component and a liquid phase component at an operating temperature; and forming an electric connection between the first electrode and the second electrode by heating the soldering metal alloy so as to adhere to the surface of the second electrode.

摘要翻译： 一种在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子设备。 根据本发明的一个实施例是一种用于制造在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子器件的方法，所述第一和第二电极的两个表面具有粘合倾向 所述方法包括以下步骤：在所述第一电极上形成金属凸块，所述金属凸块由在工作温度下由固相组分和液相组分组成的焊接金属合金制成; 以及通过加热所述焊接金属合金以在所述第一电极和所述第二电极的表面之间形成电连接。

公开(公告)号：US5284796A

公开(公告)日：1994-02-08

申请号：US939695

申请日：1992-09-02

申请人： Teru Nakanishi ,  Kazuaki Karasawa ,  Masayuki Ochiai ,  Kaoru Hashimoto

发明人： Teru Nakanishi ,  Kazuaki Karasawa ,  Masayuki Ochiai ,  Kaoru Hashimoto

IPC分类号： H01L21/60 ,  H05K3/30 ,  H05K3/34 ,  H01L21/283 ,  H01L21/58

CPC分类号： H01L24/81 ,  H01L2224/10135 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/303 ,  H05K3/3431

摘要： A process for a flip chip connection of a semiconductor chip includes the steps of forming a plurality of stud bumps on the semiconductor chip, on which a plurality of solder bumps are formed, in the vicinity of the outer periphery thereof and on the outside of the solder bumps, providing a cut groove between a plurality of the solder bumps and the stud bumps, mating the solder bumps on the semiconductor chip and the corresponding solder bumps on the circuit board and heating for subsequent integration of the mating solder bumps, and breaking way the outer peripheral portion of the semiconductor chip along the cutting groove after a flip chip connection in order to remove the stud bumps.

摘要翻译： 一种用于半导体芯片的倒装芯片连接的方法包括以下步骤：在半导体芯片的外周附近形成有多个焊料凸块的半导体芯片上形成多个凸块凸块， 焊料凸起，在多个焊料凸块和凸块凸块之间提供切割槽，将半导体芯片上的焊料凸块与电路板上的相应焊料凸块配合，并加热用于随后的配合焊料凸块的集成，以及断开方式 在倒装芯片连接之后沿着切割凹槽的半导体芯片的外周部分，以便去除凸块凸块。

公开(公告)号：US08549730B2

公开(公告)日：2013-10-08

申请号：US11898238

申请日：2007-09-11

申请人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka ,  Kazuaki Kurihara

发明人： Teru Nakanishi ,  Akihiko Akasegawa ,  Kazunori Yamanaka ,  Kazuaki Kurihara

IPC分类号： H01R4/68 ,  H01R9/05 ,  H01R13/03 ,  H01R24/52 ,  H01P1/203

CPC分类号： H01P1/203 ,  H01L39/143 ,  H01R4/68 ,  H01R9/0515 ,  H01R12/707 ,  H01R13/03 ,  H01R24/52 ,  H01R2103/00

摘要： The coaxial connector 10 to be connected with a coaxial cable has a surface covering layer 20 formed of a metal material which causes an eutectic reaction with In on the surface of a terminal 12 which is a core conductor. Because of the surface covering layer 20 of a metal material which causes the eutectic reaction with In formed on the surface of the terminal of the coaxial connector, the terminal of the coaxial connector and the electrode of a superconductor device can be jointed to each other by the solder layer of In-based solder at a relatively low temperature. Thus, the discharge of oxygen from the inside of the superconductor film of a superconductor filter can be suppressed, and the decrease of the critical temperature TC can be suppressed.

摘要翻译： 与同轴电缆连接的同轴连接器10具有由金属材料形成的表面覆盖层20，其在作为芯导体的端子12的表面上引起与In的共晶反应。 由于在同轴连接器的端子的表面上形成的与In形成的共晶反应的金属材料的表面被覆层20由同轴连接器的端子和超导体器件的电极彼此连接， In-based焊料的焊料层处于较低的温度。 因此，可以抑制从超导体滤波器的超导体膜的内部的氧的放电，并且可以抑制临界温度TC的降低。